DESCRIPTION DESCRIPTION HVV1214-075 HVV1214-075 L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor HVV1214-075 1200-1400 MHz, 200µs Pulse, 10% DutyDuty 1200-1400 MHz, 200µs Pulse, 10% The innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor HVV1214-075 1200-1400 MHz, 200µs Pulse, 10% Duty HVV1214-075L-Band PRODUCT RadarOVERVIEW Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty TM y PACKAGE PACKAGE ar designed for L-Band pulsed radarradar applications designed for HVV1214-075 L-Band pulsed DESCRIPTION The high power device isapplications a high operating over the frequency range fromfrom operating the frequency range voltage silicon over enhancement mode RF transistor DESCRIPTION 1.2GHz to 1.4GHz. 1.2GHz to 1.4GHz. designed L-Band pulsed radar applications The high for power HVV1214-075 device is a high operating overenhancement the frequency range voltage mode The high silicon power HVV1214-075 deviceRF is atransistor highfrom voltage 1.2GHz to 1.4GHz. FEATURES designed for L-Band pulsed radar applications FEATURES silicon enhancement mode RF transistor designed for operating over the frequency range from L-Band pulsed radar applications operating over the 1.2GHz to 1.4GHz. FEATURES x High Power Gain Gain x range High Power frequency from 1.2GHz to 1.4GHz. x Excellent Ruggedness x Excellent Ruggedness xFEATURES Supply Voltage x 48V Power Gain x High 48V Supply Voltage xFeatures Excellent Ruggedness 48V Supply Voltage High Power Gain ABSOLUTE MAXIMUM RATINGS •xxHigh Power Gain ABSOLUTE MAXIMUM RATINGS x Excellent Ruggedness • xExcellent Ruggedness 48V Supply Voltage RATINGS ABSOLUTE MAXIMUM • 48V Supply Voltage Symbol Parameter ValueValueUnit Unit Symbol Parameter VABSOLUTE Drain-Source Voltage 105 DSS V MAXIMUM Voltage RATINGS Drain-Source 105 V V DSS VGS Gate-Source Voltage 10 Symbol Parameter Value ABSOLUTE MAXIMUM RATINGS VGS Gate-Source Voltage 10 VUnitV IDSX Current AV A VDSS Drain-Source Voltage 81058 IDSX Drain Drain Current Parameter Value Unit Gate-Source Voltage 250 10 V W PDV2Symbol Power Dissipation W GSP 2 Power Dissipation 250 D Drain-Source Voltage 105 V 95 Drain Current 8 DSS TSIV Storage Temperature -65 to °C DSX T Storage Temperature -65 to A °C 2 S Gate-Source Voltage +200 10 V PVDGS Power Dissipation 250 +200 W Drain Current 8 to °C A Storage Temperature -65 TJTISDSX Junction 200 T Junction 200 °C °C PD2 J Power Dissipation 250 W +200 Temperature Temperature Storage Temperature 200 -65 to °C TTJ S Junction +200 Temperature TJ Junction 200 °C Temperature in The device resides in a two-lead metalmetal flanged The device resides in a two-lead flanged package with with liquidliquid crystal polymer lid. lid. The The package crystal polymer TheHV400 device resides in a two-lead metal flanged package package style is qualified for gross leak leak The HV400 device resides instyle a two-lead metal flanged package is qualified for gross withtest liquid crystal polymer lid. The HV400 package – MIL-STD-750D, Method 1071.6, Test package with liquid crystal polymer lid. The style test – MIL-STD-750D, Method 1071.6, Test Condition C. HV400 package style is qualified for gross leak The device resides in a two-lead metal flanged is qualified for gross leak test – MIL-STD-750D, Method Condition C. testTest – Condition MIL-STD-750D, Method 1071.6, Test package with liquid polymer lid. The 1071.6, C. crystal HV400 package style is qualified for gross leak Condition C. RUGGEDNESS test –RUGGEDNESS MIL-STD-750D, Method 1071.6, Test Condition C. RUGGEDNESS RUGGEDNESS The HVV1214-075 device is capable of of The HVV1214-075 device is capable Thewithstanding HVV1214-075 device is capable of withstanding an an output load mismatch withstanding an output load mismatch RUGGEDNESS output load mismatch corresponding to a 20:1 VSWR over The corresponding HVV1214-075 device isover capable corresponding to a to 20:1 VSWR all phase a 20:1 VSWR over allofphase withstanding output load mismatch angles and and rated output power andand operating all phase angles andan rated output power operating angles rated output power and operating The HVV1214-075 device is over capable ofof corresponding to athe 20:1 VSWR all phase voltage across frequency band voltage across the frequency band of voltage across the frequency band of operation. withstanding an output load mismatch angles and rated output power and operating operation. operation. corresponding to a the 20:1 VSWR over all phaseof voltageParameter across frequency band Symbol Test Condition Max Symbol Condition MaxUnits Units angles and Parameter rated outputTest power and operating 1 operation. LMT LMT1 Load Load POUT =P 75W 20:1 VSWRVSWR OUT = 75W voltage across the frequency band 20:1 of Symbol Mismatch Parameter Test Condition Max Units Mismatch F = 1400MHz operation. = 1400MHz 20:1 Tolerance LMT1 Load P =F 75W VSWR m THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS Symbol Parameter Max Max Unit Unit Symbol Parameter eli The innovative Semiconductor Company! innovative Semiconductor Company! innovative Semiconductor Company! TheThe The innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor PACKAGE PACKAGE 1200-1400 MHz, 200μs Pulse, 10% Duty TheDESCRIPTION high high power HVV1214-075 device is a is high The power HVV1214-075 device a high Ground BasedPACKAGE Radar Applications voltage silicon enhancement modemode RF transistor voltage silicon enhancement RF for transistor LJJC1 LJ 1 Thermal Resistance Thermal Resistance0.70 0.70 °C/W°C/W JC THERMAL CHARACTERISTICS Symbol Parameter Max Unit LJJC1 Thermal Resistance 0.70 °C/W Symbol Parameter Max Unit 1 ELECTRICAL CHARACTERISTICS LJJCELECTRICAL Thermal Resistance 0.70 °C/W CHARACTERISTICS ELECTRICAL CHARACTERISTICS Symbol LMT1 ELECTRICAL CHARACTERISTICS Symbol Conditions Symbol Parameter Parameter Conditions ELECTRICAL CHARACTERISTICS VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA 3mA V Drain-Source Breakdown VGS=0V,ID=1mA ToleranceOUT Parameter Test Condition Mismatch F = 1400MHz Load Tolerance POUT = 75W Mismatch F = 1400MHz Tolerance Max 20:1 Units VSWR Pr Typ Typ UnitsUnits 110 110 V BR(DSS) Symbol Parameter Conditions Typ 102 µA UnitsV IDSS Drain Leakage Current VGS=0V,VDS=48V <10 <80 I Drain Leakage Current VGS=0V,VDS=48V <10 µA DSS VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA 110 V IGSS Gate Leakage Current VGS=5V,VDS=0V <1 <1 Units µA Symbol Parameter Conditions Typ Gate Leakage Current VGS=5V,VDS=0V I1DSSIGSS Drain Leakage Current VGS=0V,VDS=48V <10 µA µA 1 GP VBR(DSS) Power Gain GainBreakdown PVGS=0V,ID=1mA 21 21 VdB dB Drain-Source OUT=75W,F=1200MHz,1400MHz Power POUT=75W,F=1200MHz,1400MHz 110 I 1 GP Gate Leakage Current VGS=5V,VDS=0V <1 µA IRLIGSS Input Return Loss PVGS=0V,VDS=48V 9 dB Drain Leakage Current <10 µA OUT=75W,F=1200MHz,1400MHz DSS 1IRL1 Input Return Loss P =75W,F=1200MHz,1400MHz OUT G Power Gain POUT=75W,F=1200MHz,1400MHz 21 9 dB dB 1P 1 Gate Leakage Current VGS=5V,VDS=0V <1 µA džD IGSS Drain Efficiency P =75W,F=1200MHz,1400MHz 44 % OUT dž1 Drain Efficiency 44 OUT=75W,F=1200MHz,1400MHz 9 IRL Input Return Loss POUTP=75W,F=1200MHz,1400MHz dB % 1 1D Power Gain =75W,F=1200MHz,1400MHz 21 1 PDG Pulse Droop PPOUT =75W,F=1200MHz,1400MHz <0.6<0.6dB dB P OUT 1 PD Pulse Droop P =75W,F=1200MHz,1400MHz OUT džD 1 Drain Efficiency POUT=75W,F=1200MHz,1400MHz 44 % dB IRL Input Return Loss POUT =75W,F=1200MHz,1400MHz 9 dB 1 PD Pulse POUT=75W,F=1200MHz,1400MHz =75W,F=1200MHz,1400MHz <0.6 dB džD1 Drain Droop Efficiency P 44 % 1.) Under Pulse Conditions: Pulse Width = 200µsec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 50mA OUT 1.) 1 1 Under Pulse Conditions: Pulse Width = 200µsec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 50mA Conditions: Pulse Width = 200μsec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 50mA PD Pulse Pulse Droop POUT =75W,F=1200MHz,1400MHz <0.6 dB 2.)Under Rated at TCASE = 25°C 2.) Rated at T = 25°C CASE Pulse Width = 200µsec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 50mA 21.) Under Pulse Conditions: Rated at Tat CASE = 25°C 2.) Rated T = 25°C CASE 1.) Under Pulse Conditions: Pulse Width = 200µsec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 50mA 2.) Rated at TCASE = 25°C HVViHVVi Semiconductors, Inc. Inc. Semiconductors, st HVVi Semiconductors, Inc. st St. Suite 100 10235 S. 51 100 10235 S. 51 St. Suite HVVi Semiconductors, Inc. st St. Suite 100 10235 S. 51st Phoenix, Az. 85044 St. Suite 100 10235 S. 51 Phoenix, Az. 85044 HVVi Semiconductors, Inc. Phoenix,Az. AZ. 85044 Phoenix, St. Suite 100 10235 S. 51st85044 Phoenix, Az. 85044 For additional information, visit: visit: www.hvvi.com For additional information, www.hvvi.com For additional information: HVVi Semiconductors, Inc. Confidential HVVi information, Semiconductors, Confidential For additional visit:Inc. www.hvvi.com Tel:HVVi (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 Semiconductors, Inc. Rights Reserved. HVVi Semiconductors, Inc.All Confidential © 2008 HVVi Semiconductors, Inc. All Rights Reserved. For additional information, visit: www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. © 2008 HVVi Inc. Confidential All Rights Reserved. HVVi Semiconductors, Semiconductors, Inc. © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-PO08X1 EG-01-PO08X1 EG-01-PO08X4 5/23/08 5/23/08 EG-01-PO08X1 10/13/08 1 5/23/08 EG-01-PO08X11 1 5/23/08 1 1 The innovative Semiconductor Company! HVV1214-075 PRODUCT OVERVIEW TM L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications PACKAGE DIMENSIONS Drain GATE SOURCE Note: Drawing is not actual size. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 For additional information: Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-PO08X4 10/13/08 2