The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300μs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ruggedness • Internal Input Matching • Excellent Thermal Stability • All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the UHF band including weather and long range radar applications. MODE FREQUENCY VDD IDQ Power GAIN EFFICIENCY IRL (MHz) (V) (mA) (W) (dB) (%) (dB) 450 50 50 175 25 55 20:1 Class AB Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 300μs and pulse period = 3ms. DESCRIPTION The high power HVV0405-175 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the UHF-Band from 420MHz to 480MHz. The high voltage HVVFET™ technology produces over 175W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power. ORDERING INFORMATION Device Part Number: HVV0405-175 Demo Kit Part Number: HVV0405-175-EK Available through Richardson Electronics (http://rfwireless.rell.com/) HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS10A 12/11/08 1 innovative Semiconductor Company! HVV0405-175 HighThe Voltage, High Ruggedness HVV0405-175 HighTransistor Voltage, High Ruggedness UHF Pulsed Power HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power 400-500 MHz, 300µsTransistor Pulse, 10% Duty Cycle 400-500 Pulse, Duty Cycle UHF Pulsed Power Transistor For UHFMHz, band,300µs Weather and10% Long Range Radar Applications 400-500 MHz, 300μs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM For UHF band, Weather and Long Range Radar Applications ELECTRICAL CHARACTERISTICS %ELECTRICAL Duty ELECTRICAL CHARACTERISTICS CHARACTERISTICS Conditions % Symbol Duty Parameter TheThe innovative innovative Semiconductor Semiconductor Company! Company! V Drain-Source Breakdown Symbol Parameter BR(DSS) Symbol Parameter BR(DSS) VIVDSS BR(DSS) IGSS IIDSS DSS 1 G P IGSS 1 GSS IIRL GP111 G ηPD 1 IRL1 2 IRL VGS(Q) ηD11 D ηVTH VGS(Q)2 VGS(Q)2 VTH VTH Drain Leakage Current Drain-Source Drain-SourceBreakdown Breakdown Gate Leakage Current DrainLeakage LeakageCurrent Current Drain Power Gain Gate Leakage Current Gate Leakage Current Input Return Loss Power Gain Power DrainGain Efficiency Input Return Loss Input Return Loss Gate DrainQuiescent Efficiency Voltage Drain Efficiency Threshold Voltage Gate Quiescent Voltage Gate Quiescent Voltage Threshold Voltage Threshold Voltage VGS=0V,ID=5mA Conditions Conditions VGS=0V,VDS=48V VGS=0V,ID=5mA VGS=0V,ID=5mA VGS=5V,VDS=0V VGS=0V,VDS=48V VGS=0V,VDS=48V F=450MHz VGS=5V,VDS=0V VGS=5V,VDS=0V F=450MHz F=450MHz F=450MHz F=450MHz F=450MHz F=450MHz VDD=50V,IDQ=50mA F=450MHz F=450MHz VDD=5V, ID=300µA VDD=50V,IDQ=50mA VDD=50V,IDQ=50mA VDD=5V, ID=300µA VDD=5V, ID=300μA PULSE CHARACTERISTICS PulseCHARACTERISTICS CHARACTERISTICS PULSE Symbol Parameter Symbol Parameter t1 Rise Time r Symbol Ttrf11 tr 1 1 TPD tff1 11 Conditions Conditions F=450MHz PD PD RiseParameter Time Fall RiseTime Time FallPulse Time Droop Fall Time Pulse Droop Pulse Droop Conditions F=450MHz F=450MHz F=450MHz F=450MHz F=450MHz F=450MHz F=450MHz F=450MHz Symbol Parameter Max Unit 1 Symbol θ JC Parameter Thermal Resistance Max 0.40 Unit °C/W Thermal Resistance 0.40 °C/W THERMAL PERFORMANCE THERMAL ThermalPERFORMANCE CHARACTERISTICS θJC 1 Min 95 23 52 1.1 0.7 Min Min- Min ----- Min 95 Typical Min 102 95 50 23 -1 23 25 52 -7 1.1 52 55 0.7 1.1 1.45 0.7 1.2 Typical 102 Max Typical Typical 50 102 1 50 200 25 1 5 -7 25 55 -7 -4 1.45 55 1.2 1.45 1.8 1.2 1.7 Max Unit Max 200 V5 200 μA 5 μA -4 dB -4 dB 1.8 % 1.7 1.8 V 1.7 V Unit V Unit µA V µA µA dB µA dB dB % dB V % V V V Max Units Unit nS 50 50 Max nS Units 50 nS 50 nS 50 0.5 nS dB 50 nS 0.5 0.5 dB dB Typical Max <25 Typical <25 <22 <25 <22 0.3 <22 0.30.3 RUGGEDNESS PERFORMANCE RUGGEDNESS RUGGEDNESS PERFORMANCE PERFORMANCE Symbol LMT1 Symbol LMT1 Parameter Test Condition Load F = 450 MHz Parameter Test Condition Mismatch Load F = 450 MHz Tolerance Mismatch Tolerance HVV0405-175 device is Max 20:1 Max 20:1 Units VSWR Units VSWR The capable of withstanding an output load mismatch The HVV0405-175 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR corresponding to a 20:1 VSWR at rated of output power andan nominal voltage The HVV0405-175 device is capable withstanding outputoperating load mismatch at rated the output power nominal voltage across the frequency of operation. across frequency band ofoperating operation. corresponding to aand 20:1 VSWR at rated output power and band nominal operating voltage across the frequency band of operation. NOTE: All parameters measured under pulsed conditions at 175W output power 1 1.) NOTE: All parameters measured under pulsed conditions at 175W output power measured at the 10% point of the pulse with pulse width = 300μsec, duty cycle = 10% measured at the 10% point the pulse with pulse width duty cycle = 10% 1.) NOTE: parameters measured under pulsed at 175W output power and VDD = All 50V, IDQ = 50mA inof a broadband matched testconditions fixture.= 300µsec, and VDD = 50V, IDQ = 50mA in a broadband matched test fixture. measured at the 10% point of the pulse with pulse width = 300µsec, duty cycle = 10% 2 NOTE: Amount of gate voltage required to attain nominal quiescent current. 2.) Amount gatein voltage required to attain nominal quiescent current. and NOTE: VDD = 50V, IDQ =of 50mA a broadband matched test fixture. 2.) NOTE: Amount of gate voltage required to attain nominal quiescent current. HVVi Semiconductors, Semiconductors, Inc. HVVi Inc. st St. Suite 100 10235S.S.51 51st St. Suite 100 10235 HVVi Semiconductors, Inc. Phoenix,Az. AZ. 85044 Phoenix, St. Suite 100 10235 S. 51st 85044 Phoenix, Az. 85044 ISOISO 9001:2000 Certified 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com Tel: (866) 429-HVVi (4884) or visit www.hvvi.com ISO 9001:2000 Certified © 2008 HVVi Semiconductors, Inc. All Rights Reserved. ©Tel: 2008 HVVi Semiconductors, Inc. All Rights Reserved. (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS10A EG-01-DS10A 12/11/08 12/12/08 EG-01-DS10A 2 12/12/082 2 The innovative Semiconductor Company! High Voltage, High Ruggedness HVV0405-175 High Voltage,HVV0405-175 High Ruggedness UHF Pulsed Power TransistorUHF Pulsed Power Transistor 400-500 MHz, 300µs Pulse, 10% DutyMHz, Cycle300μs Pulse, 10% Duty Cycle 400-500 For UHF band, Weather and Long Range Radar Applications For UHF band, Weather and Long Range Radar Applications TM % Duty The innovative Semiconductor Company! ZIN* 480MHz 420MHz Zo = 10 Ω ZOUT* 420MHz Frequency 420 MHz 430 MHz 440 MHz 450 MHz 460 MHz 470 MHz 480 MHz HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 Zin*(ohms) 2.14-j2.38 2.05-j2.01 1.95j-1.65 1.87-j1.30 1.80-j0.98 1.75-j.064 1.68-j0.33 Zout*(ohms) 4.75-j0.01 4.82-j0.08 4.75-j0.20 4.62-j0.37 4.40-j0.48 4.10-j0.56 3.70-j0.55 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS10A 12/12/08 3 EG-01-DS10A 12/11/08 3 The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness High Voltage, High Ruggedness HVV0405-175 HighTransistor Voltage,HVV0405-175 High Ruggedness UHF Pulsed Power UHF Pulsed Power Transistor UHF Pulsed Power Transistor TM 400-500 MHz, 300μs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TheThe innovative innovative Semiconductor Semiconductor Company! Company! % Duty % Duty Demonstration Board Outline Demonstration Board Outline Demonstration Board Outline Demonstration Circuit Board Picture Demonstration Circuit Board Picture Demonstration Circuit Board Picture Part Description Part Number Manufacturer C1,C2,C6,C7 : 220 pF ATC 100B Chip Capacitor 100B221JP500X ATC Part Description Part Number Manufacturer C3 1.0 uF, 100V Chip Capacitor (X7R 1210) GRM32ER72A105MA01L Murata C1,C2,C6,C7 : 220 pF ATC 100B Chip Capacitor 100B221JP500X ATC C4 10K pF 100V Chi Capacitor (X7R 1206) C1206C103K1RACTU Kemet C3 1.0 uF, 100V Chip Capacitor (X7R 1210) GRM32ER72A105MA01L Murata C5 1K pF 100V Chi Capacitor (X7R 1206) C1206C102K1RACTU Kemet C4 10K pF 100V Chi Capacitor (X7R 1206) C1206C103K1RACTU Kemet R1: 56 Ohms Chip Resistor (1206) SMD RC1206JR-07100KL DIGI-KEY C5 1K pF 100V Chi Capacitor (X7R 1206) C1206C102K1RACTU Kemet R2: 1.5 K Ohms Chip Resistor (1206) SMD RC1206JR-07100KL DIGI-KEY R1: 56 Ohms Chip Resistor (1206) SMD RC1206JR-07100KL DIGI-KEY C8: 22.0 pF ATC 100B Chip Capacitor 100B220BW 150X ATC R2: 1.5 K Ohms Chip Resistor (1206) SMD RC1206JR-07100KL DIGI-KEY C9: 15.0 pF ATC 100B Chip Capacitor 100B150JP500X ATC C8: 22.0 pF ATC 100B Chip Capacitor 100B220BW 150X ATC C10: 3.9 pF ATC 100B Chip Capacitor 100B3R9JP500X ATC C9: 15.0 pF ATC 100B Chip Capacitor 100B150JP500X ATC C11,C12: 12 pF ATC 100B Chip Capacitor 100B120JP500X ATC C10: 3.9 pF ATC 100B Chip Capacitor 100B3R9JP500X ATC C13: 24.0 pF ATC 100B Chip Capacitor 100B240JP500X ATC C11,C12: 12 pF ATC 100B Chip Capacitor 100B120JP500X ATC C14: 10 pF ATC 100B Chip Capacitor 100B100JP500X ATC C13: 24.0 pF ATC 100B Chip Capacitor 100B240JP500X ATC C15: 1.0 pF ATC 100B Chip Capacitor 100B1R0JP500X ATC C14: 10 pF ATC 100B Chip Capacitor 100B100JP500X ATC C16: 10uF 63V Elect FK SMD PCE3479CT-ND Digi Key C15: 1.0 pF ATC 100B Chip Capacitor 100B1R0JP500X ATC L1 43 nH Coilcraft mini spring Inductor B10T_L_ Coil craft C16: 10uF 63V Elect FK SMD PCE3479CT-ND Digi Key C17, C18: 100uF 63V Elect FK SMD PCE3483CT-ND Digi Key L1 43 nH Coilcraft mini spring Inductor B10T_L_ Coil craft RF Connectors (2) Type "N" RF connectors 5919CC-TB-7 Coaxicom C17, C18: 100uF 63V Elect FK SMD PCE3483CT-ND Digi Key DC Drain Conn Connector Jack Banana Nylon Red J151-ND DIGI-KEY RF Connectors (2) Type "N" RF connectors 5919CC-TB-7 Coaxicom DC Ground Conn. Connector Jack Banana Nylon Black J152-ND DIGI-KEY DC Drain Conn Connector Jack Banana Nylon Red J151-ND DIGI-KEY DC Gate Conn. Connector Jack Banana Nylon Green J153-ND DIGI-KEY DC Ground Conn. Connector Jack Banana Nylon Black J152-ND DIGI-KEY PCB Board PCB: Arlon, 30 mils thick, 2.55 Dielectric, 2 oz Copper DS2525 DS Electronics DC Gate Conn. Connector Jack Banana Nylon Green J153-ND DIGI-KEY Heat Sink Cool Innovations Aluminum Heat Sink Cool Innovation PCB Board PCB: Arlon, 30 mils thick, 2.55 Dielectric, 2 oz Copper DS2525 DS Electronics Device Clamp Cool Innovations Nylon Clamp Foot FXT000158 Rv.B Cool Innovation Heat Sink Cool Innovations Aluminum Heat Sink Cool Innovation S.S. Screws (3) Copper State Bolt 4-40 X 1/4 Stainless Steel Hex Head Socket Screws P242393 Device Clamp Cool Innovations Nylon Clamp Foot FXT000158 Rv.B Cool Innovation SCAS-0440-08C Small Parts Inc Alloy Screws (4) 4-40 X 1/2 Alloy Socket Cap screw Hex Head S.S. Screws (3) Copper State Bolt 4-40 X 1/4 Stainless Steel Hex Head Socket Screws P242393 Metal Washers(4) Small Parts Inc #4 Washer Zinc PLTD Steel Lock ZSLW-004-M SCAS-0440-08C Small Parts Inc Alloy Screws (4) 4-40 X 1/2 Alloy Socket Cap screw Hex Head (AutoCAD Files for Demonstration Board available online at www.hvvi.com/products) Metal Washers(4) Small Parts Inc #4 Washer Zinc PLTD Steel LockBoard available online atZSLW-004-M (AutoCAD Files for Demonstration www.hvvi.com/products) (AutoCAD Files for Demonstration Board availableCircuit onlineBoard at www.hvvi.com/products) HVV0405-175 Demonstration Billof of Materials Materials HVV0405-175 Demonstration Circuit Board Bill HVV0405-175 Demonstration Circuit Board Bill of Materials HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. st St. Suite 100 10235 S.S.51 10235 51st St. Suite 100 HVVi Semiconductors, Inc. Phoenix, Az. st 85044 Phoenix, AZ. 85044 St. Suite 100 10235 S. 51 Phoenix, Az. 85044 ISO9001:2000 9001:2000 Certified Certified ISO Tel: (866) 429-HVVi (4884) or visitwww.hvvi.com www.hvvi.com Tel: (866) 429-HVVi (4884) orCertified visit ISO 9001:2000 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. © 2008 HVVi 429-HVVi Semiconductors, Inc. All www.hvvi.com Rights Reserved. Tel: (866) (4884) or visit © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS10A EG-01-DS10A 12/12/08 12/11/08 EG-01-DS10A 4 12/12/08 4 4 The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness HVV0405-175 High Voltage, UHFHigh PulsedRuggedness Power Transistor UHF Pulsed Power Transistor 400-500 MHz, 300μs Pulse, 10% Duty Cycle 400-500 MHz, 300µs Pulse,For 10% UHFDuty band,Cycle Weather and Long Range Radar Applications PACKAGE DIMENSIONS For UHF band, Weather and Long Range Radar Applications TM PACKAGE DIMENSIONS % Duty DRAIN GATE The innovative Semiconductor Company! SOURCE Note: Drawing is not actual size. Note: Drawing is not actual size. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not ISO 9001:2000 EG-01-DS10A authorized. No licenses, implied, areCertified conveyed under any HVVi intellectual property HVVi Semiconductors, Inc. either express or Tel: (866) (4884) or visit www.hvvi.com 12/11/08 10235 S. 51st St. Suiteany 100 patent rights. rights, including The429-HVVi HVVi name and logo are trademarks of HVVi Semiconductors, © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 5 Phoenix, AZ. 85044 Inc.