HVV1214-025 HVV1214-025 L-BandRadar RadarPulsed PulsedPower PowerTransistor Transistor L-Band HVV1214-075 1200-1400 MHz,200!s 200!sPulse, Pulse,10% 10%Duty Duty HVV1214-025 The innovative Semiconductor Company! 1200-1400 MHz, L-Band Radar Pulsed Power Transistor HVV1214-025 L-Band RadarMHz, Pulsed Power Transistor 1200-1400 200µs Pulse, 10% Duty L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200!s Pulse, 10% Duty HVV1214-025 PRODUCT OVERVIEW 1200-1400 MHz, 200!s Pulse, 10% Duty TM L-Band Radar Pulsed Power Transistor PACKAGE PACKAGE 1200-1400 MHz, 200µs Pulse, 10% Duty DESCRIPTION for Ground Based PACKAGE Radar Applications DESCRIPTION The high power HVV1214-025 device is a high DESCRIPTION DESCRIPTION y PACKAGE L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty ar FEATURES DESCRIPTION x• High High Power PowerGain Gain • High Power Gain FEATURES Features x Excellent Ruggedness PACKAGE PACKAGE HVV1214-075 The device resides in a Surface Mount The device resides in a Surface Mount Transistor Package with a ceramic lid. The Transistor Package with a ceramic lid. The PACKAGE SM200 package style is qualified for gross leak SM200 package style is qualified for gross leak test – resides MIL-STD-883, Method 1014. The device in a Surface Mount test – MIL-STD-883, Method 1014. The device resides a Surface Mount Transistor Package with in a ceramic lid. The Transistor with a ceramic lid. leak The SM200 packagePackage style is qualified for gross SM200 package style is qualified for gross leak testdevice – MIL-STD-883, 1014. Transistor Package The resides in a Method Surfacetwo-lead Mount RUGGEDNESS The device resides in aMethod metal flanged test – MIL-STD-883, 1014. RUGGEDNESS with apackage ceramicwith lid. The SM200 package style liquid crystal polymer lid.is qualified The for gross leakpackage test – MIL-STD-883, Method HV400 style is qualified for1014. gross leak RUGGEDNESS test MIL-STD-750D, Method 1071.6, The–HVV1214-025 device is capable of Test The HVV1214-025 device is capable of RUGGEDNESS Condition C. withstanding an output load mismatch withstanding an output load mismatch corresponding to a 20:1 VSWR over all phase corresponding to a 20:1 VSWR over all phase RUGGEDNESS angles and rated output power of and operating The HVV1214-025 device is capable RUGGEDNESS angles and rated output power and operating The HVV1214-025 is capable of voltage across the device frequency band of withstanding an output load mismatch voltage across the frequency band of The HVV1214-025 device is capable of withstanding an withstanding output load mismatch operation.to aan corresponding 20:1 VSWR over all phase operation. The HVV1214-075 device isto capable ofover output load mismatch corresponding a 20:1 VSWR corresponding to a 20:1 VSWR over all phase angles and rated output power and operating withstanding an output load mismatch angles andParameter rated output power operating Symbol Test Condition Max Units allvoltage phase angles and rated output power operating across the frequency band ofand and Symbol Parameter TestVSWR Condition Max Units 1 corresponding to a 20:1 over allflanged phase The device resides in a two-lead metal voltage across the frequency band of LMT Load P = 300W 20:1 VSWR 1 OUT operation. voltage acrossand the frequency of operation. LMT Load Pband = 300W 20:1 VSWR OUTpower angles rated output and operating Mismatch package with liquid crystal polymer lid. The operation. Mismatch F = 1090 MHz voltagepackage across the F qualified band leak of =frequency 1090 MHz Tolerance HV400 style for Max gross Symbol Parameter TestisCondition Units Tolerance operation. 1 –Load MIL-STD-750D, Method 1071.6, Test Symbol Parameter Condition LMTtest POUT =Test 300W 20:1 Max VSWRUnits Condition C. LMT1 Mismatch Load Symbol Parameter TestPCondition Max 20:1UnitsVSWR OUT = 300W eli m in • Excellent Ruggedness • Excellent Ruggedness xhigh Supply Voltage • 48V 48V Supply Voltage The• •High power HVV1214-075 device is a high Power Gain 48V Supply Voltage silicon enhancement mode RF transistor •voltage High Power Gain • •Excellent Ruggedness High Power Gain for Ruggedness L-Band pulsed RATINGS radar applications •designed Excellent ABSOLUTE MAXIMUM •48V Supply Voltage •48V Supply Excellent Ruggedness over the frequency range •operating Voltage Symbol Parameter Value from Unit Symbol Parameter Value Unit • 48V Supply Voltage 1.2GHz to 1.4GHz. VDSS Drain-Source Voltage 105 V VSymbol Drain-Source Voltage RATINGS 105 V DSS Parameter Unit MAXIMUM VABSOLUTE Gate-Source Voltage Value 10 V GS VVGS Gate-Source Voltage 105 10 V Drain-Source DSS Parameter Symbol Value2 Unit VA IDSX Drain CurrentVoltage FEATURES IVDSX2 Drain CurrentVoltage 2 A Gate-Source Parameter Value VDSS Symbol Drain-Source Voltage 105 10 PGS Power Dissipation 116 V VUnit W 2 D P Power Dissipation 116 W D I Drain Current 8 A 95 Drain-Source Voltage V°C DSS Gate-Source VGS VTDSX Voltage 10 105 V Storage Temperature -65 to S x High Power Gain 2 TPSD Storage Temperature -65 to °C Power Dissipation Voltage 250 10 V GS DrainGate-Source IDSX V Current +200A W x Excellent Ruggedness 2 +200 2 ITDSX Storage Temperature -65 to °C Drain Current 2 S PD Power Dissipation 116 200 W A°C T1,2 Junction Jx 48V Junction Supply Voltage T 200 J2 +200 P Power Dissipation 116 °C °C W D Temperature TS Storage Temperature -65 to Temperature Junction Temperature 200 °C TTSJ Storage -65 to °C +200 Temperature ABSOLUTE MAXIMUM RATINGS +200 TJ Junction 200 °C TJ Junction 200 °C Temperature Temperature Symbol Parameter Value Unit VTHERMAL Drain-Source Voltage 105 V CHARACTERISTICS DSS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS V Gate-Source Voltage 10 V GS Parameter Max ISymbol Drain Current 8 A Unit DSX F P= 1090 MHz 1300MHz Symbol Parameter Max Unit Symbol Max Unit LMT1 LoadMismatch 20:1 VSWR OUT = 75W Tolerance F = 1090 MHz PD2 1 Power Dissipation W°C/W Thermal Resistance 250 1.5 THERMAL CHARACTERISTICS Tolerance Mismatch Thermal Resistance 1.5 °C/W LJ Thermal Resistance 0.70 °C/W JC THERMAL CHARACTERISTICS F = 1400MHz TS Storage Temperature -65 to °C RUGGEDNESS Tolerance Symbol Parameter Max+200 Unit ELECTRICAL CHARACTERISTICS Symbol Parameter Max °C/W Unit ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS T Junction °C Thermal Resistance 1.5 200 J The HVV1214-075 device is capable of ELECTRICAL ThermalCHARACTERISTICS Resistance 1.5 °C/W Temperature withstanding an output load mismatch Symbol Parameter Conditions corresponding to a 20:1Typ Units VSWR over all phase Symbol Parameter Conditions Typ Units ELECTRICAL CHARACTERISTICS 2mA 102 V Drain-Source Breakdown VGS=0V,ID=1mA 110 V Symbol Parameter Conditions Typ Units BR(DSS) angles and rated output power and CHARACTERISTICS VELECTRICAL Drain-Source Breakdown VGS=0V,ID=1mA 110 V operating BR(DSS) <25 IDSS Drain Leakage Current VGS=0V,VDS=48V <10 !A Drain-Source Breakdown VGS=0V,ID=1mA BR(DSS) voltage across the 110 frequencyV!A band of IVDSS Drain Leakage Current VGS=0V,VDS=48V <10 Symbol Parameter Conditions Typ Units I Gate Leakage Current VGS=5V,VDS=0V <1 !A ITHERMAL Drain Leakage Current VGS=0V,VDS=48V <10 µA GSS operation. DSS CHARACTERISTICS ISymbol Gate Leakage Current VGS=5V,VDS=0V <1 !A GSS1 Parameter Conditions Typ Units VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA 110 Condition 1300MHz Power Gain POUT=25W,F=1200,1400MHz 17.5 V µA dB 1 IG Gate Leakage VGS=5V,VDS=0V <1 P GSS Symbol Parameter Test Max Units G Power Gain Current P 17.5 dB P1 1 OUT=25W,F=1200,1400MHz V Drain-Source Breakdown VGS=0V,ID=1mA 110 V BR(DSS) 11300MHz IDSS G Drain Leakage Current VGS=0V,VDS=48V <10 !A IRL Input Return Loss P =25W,F=1200,1400MHz 8 dB Power Gain P =75W,F=1200MHz,1400MHz 21 dB 1 Symbol Parameter Max Unit OUT P OUT LMT Load POUT =875W 20:1 VSWR IRL Input Return Loss P =25W,F=1200,1400MHz dB OUT Drain Leakage Current VGS=0V,VDS=48V !A DSS1 IGSS IIRL Gate Leakage Current VGS=5V,VDS=0V <1 9<10 !A dB DrainResistance Efficiency P=75W,F=1200MHz,1400MHz 49 % Mismatch 1300MHz Input Return Loss POUT LJ Thermal 0.70 °C/W OUT=25W,F=1200,1400MHz JC Drain Efficiency P 49 % F = 1400MHz OUT=25W,F=1200,1400MHz 1 IGSS 11 Gate Leakage Current VGS=5V,VDS=0V <1 !A Tolerance GP džPD Power Gain POUT =25W,F=1200,1400MHz 17.544 Drain Efficiency POUT Pulse Droop P=75W,F=1200MHz,1400MHz <0.2 dB % dB 1300MHz D11 OUT=25W,F=1200,1400MHz Pulse Droop P =25W,F=1200,1400MHz <0.2 dB PD Power Gain POUT =25W,F=1200,1400MHz 17.5 dB dB dB P 1 OUT IRL1 G Input Return Loss P =25W,F=1200,1400MHz 8 PD Pulse Droop P =75W,F=1200MHz,1400MHz <0.6 OUT OUT 1 IRLUnder Input Return Loss POUT=25W,F=1200,1400MHz 8 = 48V, dB = 15mA 1 1.) Drain Efficiency =25W,F=1200,1400MHz 49VDD % IDQ Pulse Conditions: Pulse Width =POUT 200!sec, Pulse Duty Cycle = 10%= at Under Pulse Conditions: PulsePulse WidthWidth = 200µsec, Pulse Duty 10% at IDQ 15mA ELECTRICAL CHARACTERISTICS 1.) Under Pulse Conditions: = 200!sec, PulseCycle Duty=Cycle = VDD 10% at48V, VDD == 48V, IDQ 15mA Drain POUT=25W,F=1200,1400MHz 49 %==50mA 1 1.) Pulse Conditions: 200µsec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ 2.) Under Rated Pulse at TCASE = Efficiency 25°C Pulse Width = P Droop =25W,F=1200,1400MHz <0.2 dB PD 2Rated OUT = 25°C 2.) Rated at TCASE = 25°C 1 at TCASE Pulse Droop P =25W,F=1200,1400MHz <0.2 dB PD Rated at TCASE = 25°C OUT 2.) Symbol Parameter Conditions Typ Units 1.) Under Pulse Conditions: Pulse Width = 200!sec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 15mA V Drain-Source Breakdown VGS=0V,ID=1mA 110 V BR(DSS) 1.) Under Pulse Conditions: Pulse Width = 200!sec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 15mA 2.) Rated at TCASE = 25°C IDSS Drain CurrentFor additional VGS=0V,VDS=48V <10 µA 2.) Rated at TCASE = Leakage 25°C HVVi Semiconductors, Inc. information, visit: www.hvvi.com EG-01-PO05X1 HVVi Semiconductors, Inc. For additional information, visit: www.hvvi.com EG-01-PO05X1 IGSS S. 51stst St.Gate Leakage Current VGS=5V,VDS=0V <1 µA 10235 Suite 100 HVVi Semiconductors, Inc. Confidential 4/29/08 ForSemiconductors, additional information: 10235 S. 51 St. Power Suite 100 HVVi Inc. Confidential 4/29/08 EG-01-PO05X5 HVVi Inc. GP1 Semiconductors, Gain PSemiconductors, =75W,F=1200MHz,1400MHz 21 dB EG-01-PO08X1 1 OUT HVVi Semiconductors, Inc. For additional information, visit: www.hvvi.com Phoenix, Az. 85044 © 2008 HVVi Inc. All Rights Reserved. (866) 429-HVVi (4884) or visit Phoenix, Az. 85044 © Tel: 2008 HVVi Semiconductors, Inc. www.hvvi.com All Rights Reserved. 9 10/13/08 1 51st St. Suite 100 IRL1 S. Return Loss POUT=75W,F=1200MHz,1400MHz dB HVVi10235 Semiconductors, Inc. 100 For additional visit:Inc. www.hvvi.com EG-01-PO05X1 Suite HVViinformation, Semiconductors, Confidential 5/23/08 10235 S. 51st St. Input 1 st © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 1 Phoenix, AZ. 85044 HVVi Semiconductors, Inc. For additional information, visit: www.hvvi.com EG-01-PO05X1 džD51 St. Drain Efficiency © 2008 POUT=75W,F=1200MHz,1400MHz 44 % Az. 85044 HVVi Semiconductors, Inc. All Rights Reserved. 1 10235Phoenix, S. Suite 100 HVVi Semiconductors, Inc. Confidential 4/29/08 st 1 10235 S. 51 St. Suite 100 HVVi Semiconductors, Inc. Confidential 4/29/08 PD Pulse Droop P =75W,F=1200MHz,1400MHz <0.6 dB OUT Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 1 Pr The innovative Semiconductor Company! The iThe nnovative Semiconductor Company! The innovative Semiconductor Company! innovative Semiconductor Company! The innovative Semiconductor Company! The high power HVV1214-025 device is a high DESCRIPTION voltage silicon enhancement mode RF is transistor The high power HVV1214-075 device a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications voltage silicon enhancement mode RF transistor DESCRIPTION designed for L-Band pulsed radar applications operating over the frequency range from designed for L-Band pulsed radar applications The high powerover HVV1214-025 device is afrom high operating the frequency range The highto power HVV1214-025 device is a high 1.2GHz 1.4GHz. operating over the frequency range voltage silicon enhancement mode RF transistor The high power HVV1214-025 device is a high from voltage 1.2GHz to 1.4GHz. voltage enhancement RF transistor 1.2GHz to 1.4GHz. designed for silicon L-Band pulsed radar mode applications silicon enhancement mode RFradar transistor designed for designed pulsed applications operating overfor theL-Band frequency range from FEATURES L-Band pulsed radar applications operating over the operating over the frequency range from FEATURES 1.2GHz to 1.4GHz. FEATURES 1.2GHz torange 1.4GHz. frequency from 1.2GHz to 1.4GHz. Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 1 The innovative Semiconductor Company! HVV1214-025HVV1214-025 PRODUCT OVERVIEW L-Band Radar Pulsed Power Transistor TM L-Band Radar Pulsed PowerMHz, Transistor 1200-1400 200!s Pulse, 10% Duty 1200-1400 MHz, 200µs Pulse, 10% Duty for Ground Based Radar Applications PACKAGE DIMENSIONS PACKAGE DIMENSIONS Drain DRAIN GATE The innovative Semiconductor Company! SOURCE SOURCE GATE Note: Drawing is not actual size. Note: Drawing is not actual size. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express orFor implied, are conveyed under any HVVi intellectual property additional information: EG-01-PO05X5 HVVi Semiconductors, Inc. rights, including any patent rights.Tel:The name andor logo are trademarks of HVVi Semiconductors, (866)HVVi 429-HVVi (4884) visit www.hvvi.com 10/13/08 10235 S. 51st St. Suite 100 Inc. © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 2 Phoenix, AZ. 85044 HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 For additional information, visit: www.hvvi.com HVVi Semiconductors, Inc. Confidential EG-01-PO05X1 4/29/08