PACKAGE H V V0405-175 H igh Voltage, H igh Ruggedness U H F Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle ! For U H F band, Weather and Long Range Radar Applications ! The innovative Semiconductor Company! ! ! ! ! ! ! ABSOLUTE MAXIMUM RATING (IEC 134) "#$%&'! -2""! -8""! <2"=$)>?! (29! (10! K"! ()*)$+,+*! 2*)103"&.*4+!-&',)5+! 8),+3"&.*4+!-&',)5+! 2*)10!@.**+0,! (&C+*!21DD1E),1&0! <0E.,!(&C+*! ",&*)5+!K+$E+*),.*+! KN! N.04,1&0!K+$E+*),.*+! -)'.+! /01,! 67! -! 39:;!9:! -! 9A! B! AFG! H! 9IJ! H! 3A:!,&! M@! L97:! J::! M@! THERMAL/RUGGEDNESS PERFORMANCE ! ! !"#$%&' ()*)#+,+*' -).' /01,' LJN@J! KO+*$)'!P+D1D,)04+! :IA:! M@QH! "#$%&'! TSKJ! ()*)$+,+*! T&)R! S1D$),4O! K&'+*)04+! K+D,!@&0R1,1&0! U!V!A7:!SWX! S)>! J:Y9! /01,D! -"HP! ! ! ! The HVV0405-175 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and nominal operating voltage across the frequency band of operation. ! ELECTRICAL CHARACTERISTICS "#$%&'! -ZP=2""?! <2""! <8""! 8(J! <PTJ! dž2J! -8"=b?F! -KW! ! ()*)$+,+*! 2*)103"&.*4+!Z*+)[R&C0! 2*)10!T+)[)5+!@.**+0,! 8),+!T+)[)5+!@.**+0,! (&C+*!8)10! <0E.,!P+,.*0!T&DD! 2*)10!_``141+04#! 8),+!b.1+D4+0,!-&',)5+! KO*+DO&'R!-&',)5+! ! @&0R1,1&0D! -8"V:-;<2V7$B! -8"V:-;-2"V7:-! -8"V7-;-2"V:-! UVA7:SWX! UVA7:SWX! UVA7:SWX! -22V7:-;<2bV7:$B! -22V7-;!<2VF::\B! S10! 67! 3! 3! JFI7! 3! 77! 9I9! :I]! K#E14)'! 9:J! 7:! 9:! J7I7! 3G! ^J! 9IA7! 9IJ! S)>! 3! 9::! 9::! J]I7! 3^! 3! 9IG! 9I]! /01,! -! \B! 0B! RZ! RZ! a! -! -! ! PULSE CHARACTERISTICS ! ! "#$%&'! ,*A! ,`A! (2A! ()*)$+,+*! P1D+!K1$+! U)''!K1$+! (.'D+!2*&&E! @&0R1,1&0D! UVA7:SWX! UVA7:SWX! UVA7:SWX! S10! 3! 3! 3! K#E14)'! cJ7! cJJ! :IF! S)>! 7:! 7:! :I7! /01,D! 0"! 0"! RZ! ! Notes: 1) Rated at TCASE = 25°C 2) All parameters measured under pulsed conditions at 175W output power measured at the 10% point of the pulse with pulse width = 300µsec, duty cycle = 10% and VDD = 50V, IDQ = 50mA in a broadband matched test fixture. 3) Amount of gate voltage required to attain nominal quiescent current. 4) Guaranteed by design. HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2009 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS10C 07/19/10 2 The innovative Semiconductor Company! H V V0405-175 H igh Voltage, H igh Ruggedness U H F Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For U H F band, Weather and Long Range Radar Applications Typical device performance under Class AB mode of operation and RF pulse conditions of 300µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 50mA. The device was measured at 450MHz. Typical device performance under Class AB mode of operation and RF pulse conditions of 300µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 50mA. The device was measured at 450MHz. HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2009 HVVi Semiconductors, Inc. All Rights Reserved. !!!!!!!!!!!! EG-01-DS10C 07/19/10 3 The innovative Semiconductor Company! H V V0405-175 H igh Voltage, H igh Ruggedness U H F Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle ! For U H F band, Weather and Long Range Radar Applications ! ! Typical device performance under Class AB mode of operation and RF pulse conditions of 300µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 50mA. The device was measured at 175W. ! !!!!!!!!!!!!! Typical device performance under Class AB mode of operation and RF pulse conditions of 300µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 50mA. The device was measured at 175W. HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2009 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS10C 07/19/10 4 The innovative Semiconductor Company! H V V0405-175 H igh Voltage, H igh Ruggedness U H F Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For U H F band, Weather and Long Range Radar Applications Typical device performance under Class AB mode of operation at 450MHz and RF pulse conditions of 300µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 50mA. The high voltage silicon vertical technology shows less than 1dB of power degradation over an extreme case teperature rise of 125°C. Measured at P1dB Compression Point TEMP Gain (dB) Power (W) Power (dBm) -40C 26.5 224 53.5 0C 25.9 233 53.7 25C 25.5 237 53.7 85C 24.2 210 53.2 ! HVV0405-175 Performance over Temperature HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2009 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS10C 07/19/10 5 The innovative Semiconductor Company! H V V0405-175 H igh Voltage, H igh Ruggedness U H F Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For U H F band, Weather and Long Range Radar Applications ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! Zo = 10 ȍ 420MHz ZOUT * ZIN* 420MHz Zin* HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 Zout* Input Output Impedance Matching Network Impedance Matching Network ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2009 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS10C 07/19/10 6 PACKAGE DIMENSIONS DRAIN GATE ASI PART NUMBER JDATE CODE inches mm SOURCE Note: Drawing is not actual size. ASI Semiconductor, Inc. (ASI) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, ASI does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability no liability for conse-quences resulting from the use of such information. No license, either expressed or implied, is conveyed under any ASI intellectual property rights, including any patent rights.