HF30-28F - Advanced Semiconductor, Inc.

HF30-28F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF30-28F is a 28 V epitaxial
RF NPN planar transistor designed
primarily for SSB communications.
The device utilizes emitter ballasting
for improved ruggedness and
reliability.
PACKAGE STYLE .380 4L FLG
B
.112 x 45°
A
C
E
FEATURES:
J
.125
B
• PG = 18 dB min. at 30 W/30 MHz
• IMD3 = -30 dBc max. at 30 W (PEP)
• Omnigold™ Metalization System
• POUT 30 W @ 30 MHz
D
65 V
VCEO
E
F
I
GH
4.5 A
VCBO
E
C
MAXIMUM RATINGS
IC
Ø.125 NOM.
FULL R
DIM
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
MAXIMUM
B
.785 / 19.94
C
.720 / 18.29
.730 / 18.54
D
.970 / 24.64
.980 / 24.89
.385 / 9.78
E
36 V
F
.004 / 0.10
.006 / 0.15
G
.085 / 2.16
.105 / 2.67
VEBO
4.0 V
H
.160 / 4.06
PDISS
80 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
2.2 °C/W
CHARACTERISTICS
.240 / 6.10
J
.255 / 6.48
ORDER CODE: ASI10604
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
.180 / 4.57
.280 / 7.11
I
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 200 mA
65
V
BVCES
IC = 200 mA
65
V
BVCEO
IC = 200 mA
35
V
BVEBO
IE = 10 mA
4.0
V
ICBO
VCB = 30 V
hFE
VCE = 5.0 V
COB
VCB = 30 V
IC = 500 mA
10
f = 1.0 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
1.0
mA
200
---
65
pF
REV. D
1/2
HF30-28F
ERROR! REFERENCE SOURCE
NOT FOUND.
GP
ηC
IMD3
VCE = 28 V
PIN = 0.48 W
ICQ = 25 Ma
POUT = 30 W
f = 30 MHz
18
dB
60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
-28
dBc
REV. D
2/2