VHB25-12S - Advanced Semiconductor, Inc.

VHB25-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB25-12S is Designed for
Class C, 12.5 V High Band Applications
up to 175 MHz.
PACKAGE STYLE .380 4L STUD
.112x45°
FEATURES:
E
ØC
E
B
D
MAXIMUM RATINGS
H
I
J
G
#8-32 UNC-2A
4.0 A
IC
C
B
• Common Emitter
• PG = 10 dB at 25 W/175 MHz
• Omnigold™ Metalization System
A
F
E
VCBO
36 V
VCEO
18 V
VEBO
4.0 V
MAXIMUM
DIM
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.980 / 24.89
C
.370 / 9.40
.385 / 9.78
D
.004 / 0.10
.007 / 0.18
E
.320 / 8.13
.330 / 8.38
F
.100 / 2.54
.130 / 3.30
-65 °C to +200 °C
G
.450 / 11.43
.490 / 12.45
H
.090 / 2.29
.100 / 2.54
TSTG
-65 °C to +150 °C
I
.155 / 3.94
θJC
3.5 °C/W
PDISS
TJ
65 W @ TC = 25 °C
CHARACTERISTICS
ORDER CODE: ASI10715
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
.175 / 4.45
.750 / 19.05
J
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 50 mA
18
V
BVCES
IC = 15 mA
36
V
BVEBO
IE = 5.0 mA
4.0
V
ICBO
VCB = 28 V
hFE
VCE = 5.0 V
COB
VCB = 12.5 V
PG
ηC
VCE = 12.5 V
IC = 250 mA
20
f = 1.0 MHz
POUT = 25 W
f = 175 MHz
10
60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
5.0
mA
---
---
110
pF
dB
%
REV. C
1/2
ERROR! REFERENCE SOURCE
NOT FOUND.
VHB25-12S
IMPEDANCE DATA
POUT = 25 W
VCE = 12.5 V
FREQ
ZIN (Ω)
135 MHz 0.9 – J0.5
150 MHz 0.9 + J0.3
175 MHz 1.0 + J0.4
ZCL (Ω)
2.2 + J0.8
2.1 + J0.9
1.8 + J1.1
.112x45°
A
B
ØC
D
H
I
J
G
#8-32 UNC-2A
F
E
MINIMUM
MAXIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.980 / 24.89
C
.370 / 9.40
.385 / 9.78
D
.004 / 0.10
.007 / 0.18
E
.320 / 8.13
.330 / 8.38
F
.100 / 2.54
.130 / 3.30
.490 / 12.45
DIM
G
.450 / 11.43
H
.090 / 2.29
.100 / 2.54
I
.155 / 3.94
.175 / 4.45
J
.750 / 19.05
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
2/2