VHB25-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-12S is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: E ØC E B D MAXIMUM RATINGS H I J G #8-32 UNC-2A 4.0 A IC C B • Common Emitter • PG = 10 dB at 25 W/175 MHz • Omnigold™ Metalization System A F E VCBO 36 V VCEO 18 V VEBO 4.0 V MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 -65 °C to +200 °C G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 TSTG -65 °C to +150 °C I .155 / 3.94 θJC 3.5 °C/W PDISS TJ 65 W @ TC = 25 °C CHARACTERISTICS ORDER CODE: ASI10715 TC = 25 °C NONETEST CONDITIONS SYMBOL .175 / 4.45 .750 / 19.05 J MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 18 V BVCES IC = 15 mA 36 V BVEBO IE = 5.0 mA 4.0 V ICBO VCB = 28 V hFE VCE = 5.0 V COB VCB = 12.5 V PG ηC VCE = 12.5 V IC = 250 mA 20 f = 1.0 MHz POUT = 25 W f = 175 MHz 10 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5.0 mA --- --- 110 pF dB % REV. C 1/2 ERROR! REFERENCE SOURCE NOT FOUND. VHB25-12S IMPEDANCE DATA POUT = 25 W VCE = 12.5 V FREQ ZIN (Ω) 135 MHz 0.9 – J0.5 150 MHz 0.9 + J0.3 175 MHz 1.0 + J0.4 ZCL (Ω) 2.2 + J0.8 2.1 + J0.9 1.8 + J1.1 .112x45° A B ØC D H I J G #8-32 UNC-2A F E MINIMUM MAXIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 .490 / 12.45 DIM G .450 / 11.43 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 .175 / 4.45 J .750 / 19.05 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2