ASI HF220

HF220-50
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The HF220-50 is a 50 V epitaxial
silicon NPN transistor, designed for
SSB communications.
PACKAGE STYLE .500 4L FLG
FEATURES:
.112x45°
L
A
• PG = 13 dB Typical at 220 W/30 MHz
• IMD3 = -30 dBc Max. at 220 W (PEP)
• Omnigold™ Metalization System
• 50 V operation
C
E
FULL R
C
B
B
E
H
E
D
G
F
I J
MAXIMUM RATINGS
12 A
IC
110 V
VCBO
VCEO
55 V
VEBO
4.0 V
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
PDISS
320 W @ TC = 25 C
TJ
-65 C to +200 C
O
O
O
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
.125 / 3.18
-65 C to +150 C
θJC
0.7 C/W
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
.980 / 24.89
1.050 / 26.67
.280 / 7.11
L
ORDER CODE: ASI10614
O
O
TC = 25 C
NONETEST CONDITIONS
SYMBOL
F
K
O
TSTG
MAXIMUM
.125 / 3.18
B
O
K
DIM
E
CHARACTERISTICS
Ø.125 NOM.
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 200 mA
110
V
BVCEO
IC = 200 mA
55
V
BVEBO
IE = 20 mA
4.0
V
ICEO
VCE = 30 V
5
mA
ICES
VCE = 55 V
10
mA
hFE
VCE = 6 V
80
---
Cob
VCB = 50 V
390
pF
-30
dB
dBc
%
GP
IMD3
ηC
IC = 10 A
15
f = 1.0 MHz
13
VCE = 50 V
ICQ =150 mA
f1 = 30.000 MHz
POUT = 220 W (PEP)
f2 = 30.001 MHz
40
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/2
ERROR! REFERENCE SOURCEHF220-50
NOT FOUND.
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
2/2