GBPC15M SEMICONDUCTOR RoHS RoHS Nell High Power Products Glass Passivated Single-Phase Bridge Rectifier, 15A GBPC1506M Thru GBPC1512M FEATURES UL recognition file number E320098 Universal 3-way terminals: snap-on, wire wrap-around, or PCB mounting Typical IR less than 1.0 µA High surge current capability Low thermal resistance Solder dip 260°C, 10s Compliant to RoHS Glass passivated chips Epoxy molding body TYPICAL APPLICATIONS Front Rear General purpose use in AC/DC bridge full wave rectification for power supply, home appliances, office equipment, industrial automation applications. MECHANICAL DATA - ~ ~ + Case: GBPC molding type. Epoxy meets UL 94 V-O flammability rating Terminals: Nickel plated on faston lugs, solderable per J-STD-002 and JESD22-B102. Polarity: As marked,positive lead by belevled corner Mounting Torque: 20 inches-lbs. max. (M5 screw) Weight: 10g (0.35 ozs) 32.0 ± 0.2 6.35 ± 0.2 - ~ ~ + 15 ± 0.2 www.nellsemi.com 1 ± 0.2 Aluminum base plate 13.3 ± 0.2 All dimensions in millimeters Page 1 of 4 28 ± 0.2 Ø10.00±0.2 8.9 ± 0.2 0.85 ± 0.2 26 ± 0.2 32 ± 0.2 Ø5. 50±0.2 5 ± 0.2 GBPC15M SEMICONDUCTOR RoHS RoHS Nell High Power Products PRIMARY CHARACTERRISTICS IF(AV) 15A V RRM 600V to 1200V I FSM 300A IR 5 µA VF 1.1V T J max. 150ºC MAXIMUM RATINGS (TA = 25°C unless otherwise noted) GBPC15..M PARAMETER UNIT SYMBOL 06 08 10 12 1000 1200 V Maximum repetitive peak reverse voltage V RRM 600 800 Maximum RMS voltage V RMS 420 560 700 840 V Maximum DC blocking voltage V DC 600 800 1000 1200 V Maximum average forward rectified output current (Fig.1), T C =85°C I F(AV) 15 A I FSM 300 A Rating (non-repetitive, for t greater than 1 ms and less than 10 ms) for fusing I 2t 450 A 2s RMS isolation voltage from case to leads V ISO 2500 V T J ,T STG -55 to 150 ºC Peak forward surge current single sine-wave superimposed on rated load Operating junction storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER Maximum instantaneous forward drop per diode Maximum reverse DC current at rated DC blocking GBPC15..M TEST CONDITIONS SYMBOL I F = 7.5A VF T A = 25°C voltage per diode T A = 150°C Typical junction capacitance per diode 4V, 1MHz 06 08 10 12 1.1 V 5 IR UNIT µA 500 CJ pF 300 THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) GBPC15..M PARAMETER SYMBOL Typical thermal resistance R θJC (1) 06 08 10 0.8 UNIT 12 °C/W Notes (1) With heatsink (2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with M5 screw www.nellsemi.com Page 2 of 4 GBPC15M SEMICONDUCTOR RoHS RoHS Nell High Power Products Ordering Information Tabel Device code GBPC 15 10 M 1 2 3 4 1 - Module type: "GBPC" Package, 1Φ Bridge 2 - lF(AV) rating : "15" for 15A 3 - Voltage code : code x 100 = V RRM 4 - "M" for Epoxy molded type. Fig.2 Maximum output rectified current 16 40 14 35 Average forward current (A) Average forward current (A) Fig.1 Maximum output rectified current 12 Bridges Mounted on 10 5x4x3” AL, Finned Plate 8 6 4 60 HZ Resistive or lnductive Load 2 20 40 60 80 100 120 140 25 20 15 RthSA = 0.5 °C/W 10 0 160 0 Case temperature (°C) www.nellsemi.com 30 5 0 0 60 HZ Resistive or lnductive Load 10 20 30 40 50 60 70 Ambient temperature (°C) Page 3 of 4 80 90 100 GBPC15M SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.4 Maximum non-repetitive peak forward surge current per diode 1000 80 70 Peak forward surge current (A) Average power dissipation of bridge (W) Fig.3 Maximum power dissipation Capacitive Load 60 50 T J = T J Max. 40 Resistive or Inductive Load 30 20 10 T J = T J Max. 0.5 ms Single Sine-Wave 100 1.0 Cycle 0 10 0 20 10 40 30 1 10 Average output current (A) Number of Cycles at 60 Hz Fig.5 Typical Instantaneous forward characteristics per diode Fig.6 Typical reveres leakage characteristics per diode 1000 Instantaneous reverse leakage current (µA) Instantaneous forward current (A) 100 10 T A = 25°C 1 0.1 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 T A = 150°C T A = 125°C 100 T A = 100°C 10 1 T A = 25°C 0.1 1.3 0 Instantaneous forward voltage (V) Transient thermal impedance - R thjc (°C/W) T J = 25°C f = 1.0 MHZ V sig = 50mVp-p 100 10 10 100 30 40 50 60 70 80 100 90 1.0 Zth(j-C) 0.5 0 0.001 0.01 0.1 1.0 10 Square wave pulse duration (s) Reverse v oltage (V) www.nellsemi.com 20 Fig.8 Typical transient thermal lmpedance 1,000 1 10 Percent of rated peak reverse voltage (%) Fig.7 Typical junction capacitance per diode Junction capacitance (pF) 100 Page 4 of 4 100