NELLSEMI MTP100A

MTP100A
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Three-Phase Bridge Rectifier, 100A
MTP10008A Thru MTP10016A
ø5
~
20
~
5.5
20
.5
~
41
20
-
+
30
66
81
22.5
3
21.5
5-M5 SCREWS
All dimensions in millimeters
FEATURES
UL recognition file number E320098
Typical IR less than 2.0 µA
High surge current capability
Low thermal resistance
Compliant to RoHS
Isolation voltage up to 2500V
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for big power supply, field supply for DC motor,
industrial automation applications.
ADVANTAGE
International standard package
Epoxy meets UL 94 V-O flammability rating
Small volume, light weight
Small thermal resistance
Weight: 195g (6.9 ozs)
Page 1 of 3
PRIMARY CHARACTERRISTICS
IF(AV)
100A
V RRM
800V to 1800V
I FSM
1200A
IR
20 µA
VF
1.3V
T J max.
150ºC
RoHS
RoHS
MTP100A
SEMICONDUCTOR
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted)
MTP100..A
PARAMETER
UNIT
SYMBOL
08
10
12
16
18
Maximum repetitive peak reverse voltage
V RRM
800
1000
1200
1600
1800
V
Peak reverse non-repetitive voltage
V RSM
900
1100
1300
1700
1900
V
Maximum DC blocking voltage
V DC
800
1000
1200
1600
1800
V
Maximum average forward rectified output current
I F(AV)
100
A
I FSM
1200
A
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
I 2t
7200
A 2s
RMS isolation voltage from case to leads
V ISO
2500
V
TJ
-40 to 150
ºC
T STG
-40 to 125
ºC
Peak forward surge current single sine-wave superimposed on
rated load
Operating junction storage temperature range
Storage temperature range
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
VF
Maximum instantaneous forward drop per diode
I F = 100A
Maximum reverse DC current at rated DC blocking
T A = 25°C
voltage per diod
T A = 150°C
MTP100..A
08
10
12
UNIT
16
18
1.3
V
20
IR
µA
4000
THERMAL AND MECHANICAC (TA = 25°C unless otherwise noted)
MTP100..A
TEST CONDITIONS
PARAMETER
UNIT
SYMBOL
08
Typical thermal resistance
junction to case
Single-side heat dissipation, sine
half wave
Mounting
torque
± 10 %
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
to heatsink, M5
to heatsink, M5
R θJC (1)
10
12
0.2
Nm
Notes
(1) With heatsink, single side heat dissipation, half sine wave.
(2) M5 screw.
16
A
3
4
-
Module type: ”MTP” for 3Ø Brıdge
2
-
I F(AV) rating:"100" for 100A
3
-
Voltage code:code x 100 = VRRM
4
-
Package Outline: A type package
1
Page 2 of 3
°C/W
4
195
MTP 100
18
4
Approximate weight
Device code
16
g
MTP100A
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.1 Forward characteristic
Forward voltage drop (V)
Transient thermal impedance (°C/W)
Fig.2 Thermal lmpedance (junction to case)
Forward current (A)
Time (s)
Fig.4 Case temperature vs. output current
Fig.3 Power dissipation vs. output current
140
Output Current (A)
Power dissipation (W)
120
100
80
60
40
20
0
0
Output current (A)
20
40
60
80
100
120
Case Temperature (°C)
Fig.6 I2t characteristic
2
3 2
I t (10 A S)
Forward surge current (KA)
Fig.5 Forward surge current vs. cycle
Time (ms)
Cycle @ 50Hz
Page 3 of 3
140
160