NELLSEMI MTP200

MTP200
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Three-Phase Bridge Rectifier, 200A
MTP20008 Thru MTP20018
~
50
~
2-
ø5
.5
13
~
25
25
25
25
93
110
12
6.7
34
20
5-M5
All dimensions in millimeters
FEATURES
UL recognition file number E320098
Typical IR less than 2.0 µA
High surge current capability
Low thermal resistance
Compliant to RoHS
Isolation voltage up to 2500V
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for big power supply, field supply for DC motor,
industrial automation applications.
ADVANTAGE
International standard package
Epoxy meets UL 94 V-O flammability rating
Small volume, light weight
Small thermal resistance
Weight: 320g (11.3 ozs)
Page 1 of 3
PRIMARY CHARACTERRISTICS
IF(AV)
200A
V RRM
800V to 1800V
I FSM
2100A
IR
20 µA
VF
1.35V
T J max.
150ºC
RoHS
RoHS
MTP200
SEMICONDUCTOR
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted)
MTP200
PARAMETER
UNIT
SYMBOL
08
10
12
16
18
Maximum repetitive peak reverse voltage
V RRM
800
1000
1200
1600
1800
V
Peak reverse non-repetitive voltage
V RSM
900
1100
1300
1700
1900
V
Maximum DC blocking voltage
V DC
800
1000
1200
1600
1800
V
Maximum average forward rectified output current
I F(AV)
200
A
I FSM
2100
A
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
I 2t
22100
A 2s
RMS isolation voltage from case to leads
V ISO
2500
V
TJ
-40 to 150
ºC
T STG
-40 to 125
ºC
Peak forward surge current single sine-wave superimposed on
rated load
Operating junction storage temperature range
Storage temperature range
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
VF
Maximum instantaneous forward drop per diode
I F = 200A
Maximum reverse DC current at rated DC blocking
T A = 25°C
voltage per diod
T A = 150°C
MTP200
08
10
12
UNIT
16
18
1.35
IR
V
20
µA
15
mA
THERMAL AND MECHANICAC (TA = 25°C unless otherwise noted)
MTP200
TEST CONDITIONS
PARAMETER
UNIT
SYMBOL
08
Typical thermal resistance
junction to case
Single-side heat dissipation, sine
half wave
Mounting
torque
± 10 %
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
to heatsink M5
to terminal M5
R θJC (1)
Approximate weight
10
12
0.10
(1) With heatsink, single side heat dissipation, half sine wave.
(2) M5 screw.
Device code
MTP 200
1
2
16
3
-
Module type: ”MTP” for 3Ø Brıdge
2
-
I F(AV) rating:"200" for 200 A
3
-
Voltage code:code x 100 = VRRM
1
Page 2 of 3
18
°C/W
4
Nm
4
320
Notes
16
g
MTP200
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.1 Forward current vs. Forward voltage
Fig.2 Thermal lmpedance (junction to case)
0.12
Transient Thermal Impedance (°C/W)
Peak on-state voltage (V)
3.5
3
2.5
2
1.5
1
0.5
0.09
0.06
0.03
0
1000
100
10
0.001
0.01
0.1
Peak on-state current (A)
10
Time (s)
Fig.3 Power Consumption vs. Avergage Current
Fig.4 Case Temperature vs. O-state Average Current
700
280
600
240
On-state average current(A)
On-state Power consumption (W)
1
500
400
300
200
100
200
160
120
80
40
20
0
0
50
100
150
200
250
0
On-state average current (A)
30
60
90
120
150 180
Case Temperature (°C)
Fig.6 I2t characteristic
Fig.5 Forward Surge Current vs. Cycle
2.2
1.8
20
3 2
I t (10 A S)
1.4
15
2
Forward surge current (KA)
25
10
1
5
0.6
1
10
100
1
10
Time (ms)
Cycle @ 50Hz
Page 3 of 3