MTP200 SEMICONDUCTOR RoHS RoHS Nell High Power Products Three-Phase Bridge Rectifier, 200A MTP20008 Thru MTP20018 ~ 50 ~ 2- ø5 .5 13 ~ 25 25 25 25 93 110 12 6.7 34 20 5-M5 All dimensions in millimeters FEATURES UL recognition file number E320098 Typical IR less than 2.0 µA High surge current capability Low thermal resistance Compliant to RoHS Isolation voltage up to 2500V TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for big power supply, field supply for DC motor, industrial automation applications. ADVANTAGE International standard package Epoxy meets UL 94 V-O flammability rating Small volume, light weight Small thermal resistance Weight: 320g (11.3 ozs) Page 1 of 3 PRIMARY CHARACTERRISTICS IF(AV) 200A V RRM 800V to 1800V I FSM 2100A IR 20 µA VF 1.35V T J max. 150ºC RoHS RoHS MTP200 SEMICONDUCTOR Nell High Power Products MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) MTP200 PARAMETER UNIT SYMBOL 08 10 12 16 18 Maximum repetitive peak reverse voltage V RRM 800 1000 1200 1600 1800 V Peak reverse non-repetitive voltage V RSM 900 1100 1300 1700 1900 V Maximum DC blocking voltage V DC 800 1000 1200 1600 1800 V Maximum average forward rectified output current I F(AV) 200 A I FSM 2100 A Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing I 2t 22100 A 2s RMS isolation voltage from case to leads V ISO 2500 V TJ -40 to 150 ºC T STG -40 to 125 ºC Peak forward surge current single sine-wave superimposed on rated load Operating junction storage temperature range Storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL VF Maximum instantaneous forward drop per diode I F = 200A Maximum reverse DC current at rated DC blocking T A = 25°C voltage per diod T A = 150°C MTP200 08 10 12 UNIT 16 18 1.35 IR V 20 µA 15 mA THERMAL AND MECHANICAC (TA = 25°C unless otherwise noted) MTP200 TEST CONDITIONS PARAMETER UNIT SYMBOL 08 Typical thermal resistance junction to case Single-side heat dissipation, sine half wave Mounting torque ± 10 % A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. to heatsink M5 to terminal M5 R θJC (1) Approximate weight 10 12 0.10 (1) With heatsink, single side heat dissipation, half sine wave. (2) M5 screw. Device code MTP 200 1 2 16 3 - Module type: ”MTP” for 3Ø Brıdge 2 - I F(AV) rating:"200" for 200 A 3 - Voltage code:code x 100 = VRRM 1 Page 2 of 3 18 °C/W 4 Nm 4 320 Notes 16 g MTP200 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 Forward current vs. Forward voltage Fig.2 Thermal lmpedance (junction to case) 0.12 Transient Thermal Impedance (°C/W) Peak on-state voltage (V) 3.5 3 2.5 2 1.5 1 0.5 0.09 0.06 0.03 0 1000 100 10 0.001 0.01 0.1 Peak on-state current (A) 10 Time (s) Fig.3 Power Consumption vs. Avergage Current Fig.4 Case Temperature vs. O-state Average Current 700 280 600 240 On-state average current(A) On-state Power consumption (W) 1 500 400 300 200 100 200 160 120 80 40 20 0 0 50 100 150 200 250 0 On-state average current (A) 30 60 90 120 150 180 Case Temperature (°C) Fig.6 I2t characteristic Fig.5 Forward Surge Current vs. Cycle 2.2 1.8 20 3 2 I t (10 A S) 1.4 15 2 Forward surge current (KA) 25 10 1 5 0.6 1 10 100 1 10 Time (ms) Cycle @ 50Hz Page 3 of 3