DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D252 CGD914; CGD914MI 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2000 Jul 25 2001 Nov 01 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier FEATURES CGD914; CGD914MI PINNING - SOT115J • Excellent linearity DESCRIPTION PIN • Extremely low noise CGD914 • Excellent return loss properties 1 • Rugged construction 2 and 3 • Gold metallization ensures excellent reliability. 5 7 and 8 APPLICATIONS 9 CGD914MI input output common common +VB +VB common common output input • CATV systems operating in the 40 to 870 MHz frequency range. handbook, halfpage DESCRIPTION 1 Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC), employing both GaAs and Si dies. Both modules are electrically identical, only the pinning is different. 2 3 5 7 Side view 8 9 MSA319 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL Gp Itot PARAMETER CONDITIONS power gain total current consumption (DC) MIN. MAX. UNIT f = 45 MHz 19.75 20.25 dB f = 870 MHz 20.2 21.5 dB VB = 24 V 345 375 mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT VB supply voltage − 30 Vi RF input voltage − − single tone − 70 dBmV 132 channels flat − 45 dBmV V Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −20 +100 °C 2001 Nov 01 2 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI CHARACTERISTICS Bandwidth 45 to 870 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω. SYMBOL Gp PARAMETER power gain CONDITIONS MIN. TYP. MAX. UNIT f = 45 MHz 19.75 20 20.25 dB f = 870 MHz 20.2 21 21.5 dB SL slope straight line f = 45 to 870 MHz 0.2 1 1.5 dB FL flatness straight line f = 45 to 100 MHz −0.25 − +0.25 dB f = 100 to 800 MHz −0.6 − +0.4 dB f = 800 to 870 MHz −0.45 − +0.2 dB flatness narrow band in each 6 MHz segment − − ±0.1 dB input return losses f = 40 to 80 MHz 20 − − dB f = 80 to 160 MHz 20 − − dB f = 160 to 320 MHz 18 − − dB f = 320 to 550 MHz 16 − − dB f = 550 to 650 MHz 15 − − dB f = 650 to 750 MHz 14 − − dB f = 750 to 870 MHz 14 − − dB f = 870 to 914 MHz 10 − − dB f = 40 to 80 MHz 21 − − dB f = 80 to 160 MHz 21 − − dB f = 160 to 320 MHz 20 − − dB f = 320 to 550 MHz 19 − − dB f = 550 to 650 MHz 18 − − dB f = 650 to 750 MHz 17 − − dB f = 750 to 870 MHz 16 − − dB s11 s22 output return losses f = 870 to 914 MHz 14 − − dB s21 phase response f = 50 MHz −45 − +45 deg s12 reverse isolation RFout to RFin − − 22 dB CTB composite triple beat Xmod cross modulation 2001 Nov 01 79 chs; fm = 445.25 MHz; note 1 − − −76 dB 112 chs; fm = 649.25 MHz; note 2 − − −64 dB 132 chs; fm = 745.25 MHz; note 3 − − −55 dB 79 chs flat; Vo = 44 dBmV; fm = 547.25 MHz − − −73 dB 112 chs flat; Vo = 44 dBmV; fm = 745.25 MHz − − −64 dB 132 chs flat; Vo = 44 dBmV; fm = 745.25 MHz − − −60 dB 79 chs; fm = 55.25 MHz; note 1 − − −70 dB 112 chs; fm = 55.25 MHz; note 2 − − −62 dB 132 chs; fm = 55.25 MHz; note 3 − − −57 dB 79 chs flat; Vo = 44 dBmV; fm = 55.25 MHz − − −69 dB 112 chs flat; Vo = 44 dBmV; fm = 55.25 MHz − − −65 dB 132 chs flat; Vo = 44 dBmV; fm = 55.25 MHz − − −63 dB 3 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier SYMBOL PARAMETER CSO Sum composite second order distortion (sum) CSO Diff NF d2 Vo Itot composite second order distortion (diff) noise figure second order distortion output voltage total current consumption (DC) CONDITIONS CGD914; CGD914MI MIN. TYP. MAX. UNIT 79 chs; fm = 446.5 MHz; note 1 − − −71 dB 112 chs; fm = 746.5 MHz; note 2 − − −60 dB 132 chs; fm = 860.5 MHz; note 3 − − −56 dB 79 chs flat; Vo = 44 dBmV; fm = 548.5 MHz − − −63 dB 112 chs flat; Vo = 44 dBmV; fm = 746.5 MHz − − −54 dB 132 chs flat; Vo = 44 dBmV; fm = 860.5 MHz − − −49 dB 79 chs; fm = 150 MHz; note 1 − − −59 dB 112 chs; fm = 150 MHz; note 2 − − −53 dB 132 chs; fm = 150 MHz; note 3 − − −48 dB 79 chs flat; Vo = 44 dBmV; fm = 150 MHz − − −60 dB 112 chs flat; Vo = 44 dBmV; fm = 150 MHz − − −59 dB 132 chs flat; Vo = 44 dBmV; fm = 150 MHz − − −57 dB f = 50 MHz − 2.5 3 dB f = 550 MHz − 2.5 3 dB f = 750 MHz − 2.6 3.5 dB f = 870 MHz − 3 3.5 dB note 4 − − −60 dB note 5 − − −54 dB note 6 − − −50 dB dim = −60 dB; note 7 69 − − dBmV dim = −60 dB; note 8 66 − − dBmV dim = −60 dB; note 9 63 − − dBmV note 10 345 360 375 mA Notes 1. Vo = 38 dBmV at 54 MHz; Tilt = 7.3 dB (55 to 547 MHz) extrapolated to 12 dB at 870 MHz. 2. Vo = 38 dBmV at 54 MHz; Tilt = 10.2 dB (55 to 745 MHz) extrapolated to 12 dB at 870 MHz. 3. Vo = 38 dBmV at 54 MHz; Tilt = 12 dB (55 to 865 MHz). 4. fp = 55.25 MHz; Vp = 60 dBmV; fq = 493.25 MHz; Vq = 60 dBmV; measured at fp + fq = 548.5 MHz. 5. fp = 55.25 MHz; Vp = 60 dBmV; fq = 691.25 MHz; Vq = 60 dBmV; measured at fp + fq = 746.5 MHz. 6. fp = 55.25 MHz; Vp = 60 dBmV; fq = 805.25 MHz; Vq = 60 dBmV; measured at fp + fq = 860.5 MHz. 7. Measured according to DIN45004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo −6 dB; fr = 549.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 538.25 MHz. 8. Measured according to DIN45004B: fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo −6 dB; fr = 749.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 738.25 MHz. 9. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo −6 dB; fr = 860.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 849.25 MHz. 10. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 2001 Nov 01 4 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier MCD976 −60 handbook, halfpage (1) CTB (dB) CGD914; CGD914MI MCD977 −60 52 handbook, halfpage Xmod Vo (dBmV) (1) 52 Vo (dBmV) (dB) −70 48 −70 48 −80 44 −80 44 (2) (3) (4) −90 (2) −90 40 40 (3) (4) −100 200 0 400 600 −100 36 1000 800 f (MHz) 200 0 400 600 36 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 σ. (1) Vo. (2) Typ. +3 σ. Fig.2 (3) Typ. (4) Typ. −3 σ. Composite triple beat as a function of frequency under tilted conditions. MCD978 −50 handbook, halfpage (1) CSO (dB) Fig.3 (2) CSO (dB) Vo 54 (2) (1) −60 Vo (dBmV) 50 48 (3) −70 (4) 46 44 (4) −80 −90 MCD979 handbook, halfpage (3) −70 Cross modulation as a function of frequency under tilted conditions. −50 52 (dBmV) −60 (3) Typ. (4) Typ. −3 σ. 40 200 0 400 600 −80 42 −90 38 −100 36 1000 800 f (MHz) 0 200 400 600 34 800 1000 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 σ. (1) Vo. (2) Typ. +3 σ. Fig.4 (3) Typ. (4) Typ. −3 σ. Composite second order distortion (sum) as a function of frequency under tilted conditions. 2001 Nov 01 Fig.5 5 (3) Typ. (4) Typ. −3 σ. Composite second order distortion (diff) as a function of frequency under tilted conditions. Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier MCD980 −60 handbook, halfpage −70 (1) MCD981 −60 48 handbook, halfpage Xmod Vo (dBmV) CTB (dB) CGD914; CGD914MI Vo (dBmV) (dB) −70 44 48 (1) 44 (2) (2) −80 (3) −80 40 40 (4) (3) −90 0 200 400 600 (4) −90 36 1000 800 f (MHz) 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 79 chs flat (50 to 550 MHz). ZS = ZL = 75 Ω; VB = 24 V; 79 chs flat (50 to 550 MHz). (1) Vo. (2) Typ. +3 σ. (1) Vo. (2) Typ. +3 σ. Fig.6 (3) Typ. (4) Typ. −3 σ. Composite triple beat as a function of frequency under flat conditions. MCD982 −50 handbook, halfpage Fig.7 MCD983 handbook, halfpage CSO (dB) (1) −60 Cross modulation as a function of frequency under flat conditions. −50 48 Vo (dBmV) CSO (dB) −60 44 48 Vo (dBmV) (2) (1) (2) 44 (3) (3) −70 (3) Typ. (4) Typ. −3 σ. (4) 40 −70 40 36 −80 36 32 1000 800 f (MHz) −90 (4) −80 −90 200 0 400 600 200 0 400 600 32 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 79 chs flat (50 to 550 MHz). ZS = ZL = 75 Ω; VB = 24 V; 79 chs flat (50 to 550 MHz). (1) Vo. (2) Typ. +3 σ. (1) Vo. (2) Typ. +3 σ. Fig.8 (3) Typ. (4) Typ. −3 σ. Composite second order distortion (sum) as a function of frequency under flat conditions. 2001 Nov 01 Fig.9 6 (3) Typ. (4) Typ. −3 σ. Composite second order distortion (diff) as a function of frequency under flat conditions. Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier MCD984 −40 handbook, halfpage (1) CTB (dB) CGD914; CGD914MI MCD985 −50 52 handbook, halfpage (1) Xmod Vo (dBmV) 52 Vo (dBmV) (dB) −50 48 −60 48 −60 44 −70 44 (2) (2) −70 (3) −80 40 40 (3) (4) −80 0 200 400 600 −90 36 1000 800 f (MHz) (4) 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz). ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz). (1) Vo. (2) Typ. +3 σ. (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. Fig.10 Composite triple beat as a function of frequency under tilted conditions. MCD986 −50 handbook, halfpage (1) CSO (dB) (2) (3) −60 (3) Typ. (4) Typ. −3 σ. Fig.11 Cross modulation as a function of frequency under tilted conditions. MCD987 −50 52 handbook, halfpage Vo (dBmV) (1) CSO (dB) 52 Vo (dBmV) 48 −60 48 44 −70 44 (4) −70 (2) −80 −80 40 40 (3) −90 0 200 400 600 −90 36 1000 800 f (MHz) (4) 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz). ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz). (1) Vo. (2) Typ. +3 σ. (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. Fig.12 Composite second order distortion (sum) as a function of frequency under tilted conditions. 2001 Nov 01 (3) Typ. (4) Typ. −3 σ. Fig.13 Composite second order distortion (diff) as a function of frequency under tilted conditions. 7 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier MCD988 −50 handbook, halfpage −60 (1) MCD989 −60 48 handbook, halfpage Xmod Vo (dBmV) CTB (dB) CGD914; CGD914MI Vo (dBmV) (dB) −70 44 (1) −70 44 (2) (2) (3) (4) 48 −80 40 40 (3) −80 −90 36 36 (4) −90 0 200 400 600 −100 32 1000 800 f (MHz) 0 200 400 600 32 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 112 chs flat (50 to 750 MHz). ZS = ZL = 75 Ω; VB = 24 V; 112 chs flat (50 to 750 MHz). (1) Vo. (2) Typ. +3 σ. (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. Fig.14 Composite triple beat as a function of frequency under flat conditions. MCD990 −50 (2) handbook, halfpage CSO (dB) −60 (3) Typ. (4) Typ. −3 σ. Fig.15 Cross modulation as a function of frequency under flat conditions. (3) Vo (4) (dBmV) (1) 44 MCD991 −50 48 handbook, halfpage Vo (dBmV) (2) CSO (dB) 48 −60 (1) 44 (3) −70 40 −70 −80 36 −80 32 1000 800 f (MHz) −90 −90 0 200 400 600 (4) 40 36 0 200 400 600 32 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 112 chs flat (50 to 750 MHz). ZS = ZL = 75 Ω; VB = 24 V; 112 chs; flat (50 to 750 MHz). (1) Vo. (2) Typ. +3 σ. (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. Fig.16 Composite second order distortion (sum) as a function of frequency under flat conditions. 2001 Nov 01 (3) Typ. (4) Typ. −3 σ. Fig.17 Composite second order distortion (diff) as a function of frequency under flat conditions. 8 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier MCD992 −40 handbook, halfpage (1) CTB (dB) MCD993 −50 52 handbook, halfpage Xmod Vo (dBmV) −50 CGD914; CGD914MI (1) −60 44 −70 48 (2) −60 (3) (2) (4) −70 Vo (dBmV) (dB) 48 52 44 (3) −80 40 40 (4) −80 0 200 400 600 −90 36 1000 800 f (MHz) 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz). ZS = ZL = 75 Ω; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz). (1) Vo. (2) Typ. +3 σ. (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. Fig.18 Composite triple beat as a function of frequency under tilted conditions. MCD994 −40 handbook, halfpage CSO (dB) Fig.19 Cross modulation as a function of frequency under tilted conditions. CSO (dB) (1) −50 −60 48 −60 40 0 200 400 600 (4) 44 44 (4) −70 Vo (dBmV) (3) (2) −80 (2) 48 (3) 52 handbook, halfpage (dBmV) −50 MCD995 −40 52 Vo (1) (3) Typ. (4) Typ. −3 σ. −70 40 −80 36 −90 36 1000 800 f (MHz) 0 200 400 600 32 800 1000 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz). ZS = ZL = 75 Ω; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz). (1) Vo. (2) Typ. +3 σ. (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. Fig.20 Composite second order distortion (sum) as a function of frequency under tilted conditions. 2001 Nov 01 (3) Typ. (4) Typ. −3 σ. Fig.21 Composite second order distortion (diff) as a function of frequency under tilted conditions. 9 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier MCD996 −40 handbook, halfpage −50 (1) MCD997 −60 48 handbook, halfpage Xmod Vo (dBmV) CTB (dB) CGD914; CGD914MI Vo (dBmV) (dB) −70 44 48 (1) 44 (2) −60 40 −80 36 −90 32 1000 800 f (MHz) −100 (2) (3) 40 (3) (4) −70 −80 0 200 400 600 (4) 200 0 400 600 32 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 132 chs flat (50 to 870 MHz). ZS = ZL = 75 Ω; VB = 24 V; 132 chs flat (50 to 870 MHz). (1) Vo. (2) Typ. +3 σ. (1) Vo. (2) Typ. +3 σ. (3) Typ. (4) Typ. −3 σ. Fig.22 Composite triple beat as a function of frequency under flat conditions. MCD998 −50 handbook, halfpage (2) CSO (dB) (3) −60 (1) (4) 36 (3) Typ. (4) Typ. −3 σ. Fig.23 Cross modulation as a function of frequency under flat conditions. MCD999 −40 48 handbook, halfpage Vo (dBmV) Vo (dBmV) CSO (dB) −50 44 48 (1) 44 (2) −70 −60 40 40 (3) −80 −90 0 200 400 600 36 −70 32 1000 800 f (MHz) −80 (4) 0 36 200 400 600 32 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 132 chs flat (50 to 870 MHz). ZS = ZL = 75 Ω; VB = 24 V; 132 chs flat (50 to 870 MHz). (1) Vo. (2) Typ. +3 σ. (1) Vo. (3) Typ. (2) Typ. +3 σ. (4) Typ. −3 σ. (3) Typ. (4) Typ. −3 σ. Fig.24 Composite second order distortion (sum) as a function of frequency under flat conditions. 2001 Nov 01 Fig.25 Composite second order distortion (diff) as a function of frequency under flat conditions. 10 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 2 3 5 7 8 9 A L F S W c e b w M e1 d U2 q2 Q B y M B q1 y M B y M B p U1 q 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. mm 20.8 9.1 OUTLINE VERSION b c d D E max. max. max. e e1 F 0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 0.38 L min. p Q max. 8.8 4.15 3.85 2.4 REFERENCES IEC JEDEC EIAJ q1 q2 38.1 25.4 10.2 S U1 U2 max. 4.2 44.75 8 EUROPEAN PROJECTION W w 6-32 0.25 UNC y Z max. 0.1 3.8 ISSUE DATE 99-02-06 SOT115J 2001 Nov 01 q 11 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. 2001 Nov 01 12 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier NOTES 2001 Nov 01 13 CGD914; CGD914MI Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier NOTES 2001 Nov 01 14 CGD914; CGD914MI Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier NOTES 2001 Nov 01 15 CGD914; CGD914MI Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA73 © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613518/06/pp16 Date of release: 2001 Nov 01 Document order number: 9397 750 08861