PHILIPS CGD914MI

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D252
CGD914; CGD914MI
860 MHz, 20 dB gain power
doubler amplifier
Product specification
Supersedes data of 2000 Jul 25
2001 Nov 01
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
FEATURES
CGD914; CGD914MI
PINNING - SOT115J
 Excellent linearity
DESCRIPTION
PIN
 Extremely low noise
CGD914
 Excellent return loss properties
1
 Rugged construction
2 and 3
 Gold metallization ensures excellent reliability.
5
7 and 8
APPLICATIONS
9
CGD914MI
input
output
common
common
+VB
+VB
common
common
output
input
 CATV systems operating in the 40 to 870 MHz
frequency range.
handbook, halfpage
DESCRIPTION
1
Hybrid amplifier module in a SOT115J package operating
at a voltage supply of 24 V (DC), employing both GaAs
and Si dies. Both modules are electrically identical, only
the pinning is different.
2
3
5
7
Side view
8
9
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
Gp
Itot
PARAMETER
CONDITIONS
power gain
total current consumption (DC)
MIN.
MAX.
UNIT
f = 45 MHz
19.75
20.25
dB
f = 870 MHz
20.2
21.5
dB
VB = 24 V
345
375
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VB
supply voltage

30
Vi
RF input voltage


single tone

70
dBmV
132 channels flat

45
dBmV
V
Tstg
storage temperature
40
+100
C
Tmb
operating mounting base temperature
20
+100
C
2001 Nov 01
2
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
CGD914; CGD914MI
CHARACTERISTICS
Bandwidth 45 to 870 MHz; VB = 24 V; Tmb = 35 C; ZS = ZL = 75 
SYMBOL
Gp
PARAMETER
power gain
CONDITIONS
MIN.
TYP.
MAX.
UNIT
f = 45 MHz
19.75
20
20.25
dB
f = 870 MHz
20.2
21
21.5
dB
SL
slope straight line
f = 45 to 870 MHz
0.2
1
1.5
dB
FL
flatness straight line
f = 45 to 100 MHz
0.25

0.25
dB
f = 100 to 800 MHz
0.6

+0.4
dB
f = 800 to 870 MHz
0.45

+0.2
dB
flatness narrow band
in each 6 MHz segment


0.1
dB
input return losses
f = 40 to 80 MHz
20


dB
f = 80 to 160 MHz
20


dB
s11
s22
output return losses
f = 160 to 320 MHz
18


dB
f = 320 to 550 MHz
16


dB
f = 550 to 650 MHz
15


dB
f = 650 to 750 MHz
14


dB
f = 750 to 870 MHz
14


dB
f = 870 to 914 MHz
10


dB
f = 40 to 80 MHz
21


dB
f = 80 to 160 MHz
21


dB
f = 160 to 320 MHz
20


dB
f = 320 to 550 MHz
19


dB
f = 550 to 650 MHz
18


dB
f = 650 to 750 MHz
17


dB
f = 750 to 870 MHz
16


dB
f = 870 to 914 MHz
14


dB
s21
phase response
f = 50 MHz
45

+45
deg
s12
reverse isolation
RFout to RFin


22
dB
CTB
composite triple beat
79 chs; fm = 445.25 MHz; note 1


76
dB
112 chs; fm = 649.25 MHz; note 2


64
dB
132 chs; fm = 745.25 MHz; note 3


55
dB
79 chs flat; Vo = 44 dBmV; fm = 547.25 MHz


73
dB
Xmod
cross modulation
2001 Nov 01
112 chs flat; Vo = 44 dBmV; fm = 745.25 MHz


64
dB
132 chs flat; Vo = 44 dBmV; fm = 745.25 MHz


60
dB
79 chs; fm = 55.25 MHz; note 1


70
dB
112 chs; fm = 55.25 MHz; note 2


62
dB
132 chs; fm = 55.25 MHz; note 3


57
dB
79 chs flat; Vo = 44 dBmV; fm = 55.25 MHz


69
dB
112 chs flat; Vo = 44 dBmV; fm = 55.25 MHz


65
dB
132 chs flat; Vo = 44 dBmV; fm = 55.25 MHz


63
dB
3
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
SYMBOL
PARAMETER
CSO Sum composite second
order distortion (sum)
CSO Diff
NF
d2
Vo
Itot
composite second
order distortion (diff)
noise figure
second order distortion
output voltage
total current
consumption (DC)
CGD914; CGD914MI
CONDITIONS
79 chs; fm = 446.5 MHz; note 1
MIN.

TYP.

MAX.
71
UNIT
dB
112 chs; fm = 746.5 MHz; note 2


60
dB
132 chs; fm = 860.5 MHz; note 3


56
dB
79 chs flat; Vo = 44 dBmV; fm = 548.5 MHz


63
dB
112 chs flat; Vo = 44 dBmV; fm = 746.5 MHz


54
dB
132 chs flat; Vo = 44 dBmV; fm = 860.5 MHz


49
dB
79 chs; fm = 150 MHz; note 1


59
dB
112 chs; fm = 150 MHz; note 2


53
dB
132 chs; fm = 150 MHz; note 3


48
dB
79 chs flat; Vo = 44 dBmV; fm = 150 MHz


60
dB
112 chs flat; Vo = 44 dBmV; fm = 150 MHz


59
dB
132 chs flat; Vo = 44 dBmV; fm = 150 MHz


57
dB
f = 50 MHz

2.5
3
dB
f = 550 MHz

2.5
3
dB
f = 750 MHz

2.6
3.5
dB
f = 870 MHz

3
3.5
dB
note 4


60
dB
note 5


54
dB
note 6


50
dB
dim = 60 dB; note 7
69


dBmV
dim = 60 dB; note 8
66


dBmV
dim = 60 dB; note 9
63


dBmV
note 10
345
360
375
mA
Notes
1. Vo = 38 dBmV at 54 MHz; Tilt = 7.3 dB (55 to 547 MHz) extrapolated to 12 dB at 870 MHz.
2. Vo = 38 dBmV at 54 MHz; Tilt = 10.2 dB (55 to 745 MHz) extrapolated to 12 dB at 870 MHz.
3. Vo = 38 dBmV at 54 MHz; Tilt = 12 dB (55 to 865 MHz).
4. fp = 55.25 MHz; Vp = 60 dBmV; fq = 493.25 MHz; Vq = 60 dBmV; measured at fp + fq = 548.5 MHz.
5. fp = 55.25 MHz; Vp = 60 dBmV; fq = 691.25 MHz; Vq = 60 dBmV; measured at fp + fq = 746.5 MHz.
6. fp = 55.25 MHz; Vp = 60 dBmV; fq = 805.25 MHz; Vq = 60 dBmV; measured at fp + fq = 860.5 MHz.
7. Measured according to DIN45004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo 6 dB; fr = 549.25 MHz;
Vr = Vo 6 dB; measured at fp + fq  fr = 538.25 MHz.
8. Measured according to DIN45004B: fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo 6 dB; fr = 749.25 MHz;
Vr = Vo 6 dB; measured at fp + fq  fr = 738.25 MHz.
9. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo 6 dB; fr = 860.25 MHz;
Vr = Vo 6 dB; measured at fp + fq  fr = 849.25 MHz.
10. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2001 Nov 01
4
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
MCD976
−60
handbook, halfpage
(1)
CTB
(dB)
CGD914; CGD914MI
MCD977
−60
52
handbook, halfpage
Xmod
Vo
(dBmV)
(1)
52
Vo
(dBmV)
(dB)
−70
48
−70
48
−80
44
−80
44
(2)
(3)
(4)
−90
(2)
−90
40
40
(3)
(4)
−100
200
0
400
600
−100
36
1000
800
f (MHz)
200
0
400
600
36
1000
800
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 .
(1) Vo.
(2) Typ. +3 .
Fig.2
(3) Typ.
(4) Typ. 3 .
Composite triple beat as a function of
frequency under tilted conditions.
MCD978
−50
handbook, halfpage
(1)
CSO
(dB)
Fig.3
(2)
CSO
(dB)
Vo
54
(2)
(1)
−60
(3)
−70
(4)
46
44
−80
40
200
0
400
600
−80
42
−90
38
−100
36
1000
800
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
0
200
400
(1) Vo.
(3) Typ.
(1) Vo.
(3) Typ.
(4) Typ. 3 .
(2) Typ. +3 .
(4) Typ. 3 .
Composite second order distortion (sum) as
a function of frequency under tilted
conditions.
2001 Nov 01
600
34
800
1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(2) Typ. +3 .
Fig.4
Vo
(dBmV)
50
48
(4)
−90
MCD979
handbook, halfpage
(3)
−70
Cross modulation as a function of frequency
under tilted conditions.
−50
52
(dBmV)
−60
(3) Typ.
(4) Typ. 3 .
Fig.5
5
Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
MCD980
−60
handbook, halfpage
CGD914; CGD914MI
handbook, halfpage
Xmod
Vo
(dBmV)
CTB
(dB)
−70
(1)
MCD981
−60
48
Vo
(dBmV)
(dB)
−70
44
48
(1)
44
(2)
(2)
−80
(3)
−80
40
40
(4)
(3)
−90
0
200
400
600
(4)
−90
36
800
1000
f (MHz)
0
200
400
600
36
1000
800
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz).
ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 .
(1) Vo.
(2) Typ. +3 .
Fig.6
(3) Typ.
(4) Typ. 3 .
Composite triple beat as a function of
frequency under flat conditions.
MCD982
−50
handbook, halfpage
Fig.7
MCD983
handbook, halfpage
CSO
(dB)
(1)
−60
Cross modulation as a function of frequency
under flat conditions.
−50
48
Vo
(dBmV)
CSO
(dB)
48
Vo
(dBmV)
(2)
−60
44
(2)
(1)
44
(3)
(3)
−70
(3) Typ.
(4) Typ. 3 .
(4)
40
−70
40
36
−80
36
32
1000
800
f (MHz)
−90
(4)
−80
−90
200
0
400
600
ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz).
200
0
400
(1) Vo.
(3) Typ.
(1) Vo.
(3) Typ.
(4) Typ. 3 .
(2) Typ. +3 .
(4) Typ. 3 .
Composite second order distortion (sum) as
a function of frequency under flat
conditions.
2001 Nov 01
32
1000
800
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz).
(2) Typ. +3 .
Fig.8
600
Fig.9
6
Composite second order distortion (diff) as
a function of frequency under flat
conditions.
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
MCD984
−40
handbook, halfpage
(1)
CTB
(dB)
CGD914; CGD914MI
MCD985
−50
52
handbook, halfpage
(1)
Xmod
Vo
(dBmV)
52
Vo
(dBmV)
(dB)
−50
48
−60
48
−60
44
−70
44
(2)
(2)
−70
(3)
−80
40
40
(3)
(4)
−80
0
200
400
600
−90
36
1000
800
f (MHz)
(4)
0
200
400
600
36
1000
800
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 .
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.10 Composite triple beat as a function of
frequency under tilted conditions.
MCD986
−50
handbook, halfpage
(1)
CSO
(dB)
(2)
(3)
−60
(3) Typ.
(4) Typ. 3 .
Fig.11 Cross modulation as a function of frequency
under tilted conditions.
MCD987
−50
52
handbook, halfpage
Vo
(dBmV)
(1)
CSO
(dB)
52
Vo
(dBmV)
48
−60
48
44
−70
44
(4)
−70
(2)
−80
−80
40
40
(3)
−90
0
200
400
600
−90
36
1000
800
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(4)
0
200
400
36
1000
800
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) Vo.
(3) Typ.
(1) Vo.
(3) Typ.
(2) Typ. +3 .
(4) Typ. 3 .
(2) Typ. +3 .
(4) Typ. 3 .
Fig.12 Composite second order distortion (sum) as
a function of frequency under tilted
conditions.
2001 Nov 01
600
Fig.13 Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
7
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
MCD988
−50
handbook, halfpage
CGD914; CGD914MI
handbook, halfpage
Xmod
Vo
(dBmV)
CTB
(dB)
−60
(1)
MCD989
−60
48
Vo
(dBmV)
(dB)
−70
44
(1)
−70
44
(2)
(2)
(3)
(4)
48
−80
40
40
(3)
−80
−90
36
36
(4)
−90
0
200
400
600
−100
32
1000
800
f (MHz)
0
200
400
600
32
1000
800
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 112 chs flat (50 to 750 MHz).
ZS = ZL = 75 ; VB = 24 V; 112 chs flat (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 .
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.14 Composite triple beat as a function of
frequency under flat conditions.
MCD990
−50
(2)
handbook, halfpage
CSO
(dB)
−60
(3) Typ.
(4) Typ. 3 .
Fig.15 Cross modulation as a function of frequency
under flat conditions.
(3)
Vo
(4)
(dBmV)
(1)
44
MCD991
−50
48
handbook, halfpage
CSO
(dB)
48
Vo
(dBmV)
(2)
−60
(1)
44
(3)
−70
40
−70
−80
36
−80
32
1000
800
f (MHz)
−90
−90
0
200
400
600
ZS = ZL = 75 ; VB = 24 V; 112 chs flat (50 to 750 MHz).
(4)
40
36
0
200
400
32
1000
800
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 112 chs; flat (50 to 750 MHz).
(1) Vo.
(3) Typ.
(1) Vo.
(3) Typ.
(2) Typ. +3 .
(4) Typ. 3 .
(2) Typ. +3 .
(4) Typ. 3 .
Fig.16 Composite second order distortion (sum) as
a function of frequency under flat
conditions.
2001 Nov 01
600
Fig.17 Composite second order distortion (diff) as
a function of frequency under flat
conditions.
8
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
MCD992
−40
handbook, halfpage
(1)
CTB
(dB)
CGD914; CGD914MI
handbook, halfpage
Xmod
Vo
(dBmV)
−50
MCD993
−50
52
(1)
−60
44
−70
48
(2)
−60
(3)
(2)
(4)
−70
Vo
(dBmV)
(dB)
48
52
44
(3)
−80
40
40
(4)
−80
0
200
400
600
−90
36
1000
800
f (MHz)
0
200
400
600
36
1000
800
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 .
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.18 Composite triple beat as a function of
frequency under tilted conditions.
MCD994
−40
handbook, halfpage
CSO
(dB)
Fig.19 Cross modulation as a function of frequency
under tilted conditions.
CSO
(dB)
(1)
−50
−60
48
−60
40
0
200
400
600
(4)
44
44
(4)
−70
−70
40
−80
36
−90
36
800
1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
0
200
400
600
32
800
1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) Vo.
(3) Typ.
(1) Vo.
(3) Typ.
(2) Typ. +3 .
(4) Typ. 3 .
(2) Typ. +3 .
(4) Typ. 3 .
Fig.20 Composite second order distortion (sum) as
a function of frequency under tilted
conditions.
2001 Nov 01
Vo
(dBmV)
(3)
(2)
−80
(2)
48
(3)
52
handbook, halfpage
(dBmV)
−50
MCD995
−40
52
Vo
(1)
(3) Typ.
(4) Typ. 3 .
Fig.21 Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
9
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
MCD996
−40
handbook, halfpage
CGD914; CGD914MI
handbook, halfpage
Xmod
Vo
(dBmV)
CTB
(dB)
−50
(1)
MCD997
−60
48
Vo
(dBmV)
(dB)
−70
44
48
(1)
44
(2)
−60
40
−80
36
−90
32
1000
800
f (MHz)
−100
(2)
(3)
40
(3)
(4)
−70
−80
0
200
400
600
(4)
200
0
400
600
32
1000
800
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz).
ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 .
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.22 Composite triple beat as a function of
frequency under flat conditions.
MCD998
−50
handbook, halfpage
(2)
CSO
(dB)
(3)
−60
(1)
(4)
36
(3) Typ.
(4) Typ. 3 .
Fig.23 Cross modulation as a function of frequency
under flat conditions.
MCD999
−40
48
handbook, halfpage
Vo
(dBmV)
Vo
(dBmV)
CSO
(dB)
−50
44
48
(1)
44
(2)
−70
−60
40
40
(3)
−80
−90
0
200
400
600
36
−70
32
1000
800
f (MHz)
−80
(4)
0
36
200
400
600
32
1000
800
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz).
ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz).
(1) Vo.
(3) Typ.
(2) Typ. +3 .
(4) Typ. 3 .
(1) Vo.
(2) Typ. +3 .
Fig.24 Composite second order distortion (sum) as
a function of frequency under flat
conditions.
2001 Nov 01
(3) Typ.
(4) Typ. 3 .
Fig.25 Composite second order distortion (diff) as
a function of frequency under flat
conditions.
10
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
CGD914; CGD914MI
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A2
1
2
3
5
7
8
9
A
L
F
S
W
c
e
b
w M
e1
d
U2
q2
Q
B
y M B
q1
x M B
y M B
p
U1
q
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A2
A
max. max.
mm 20.8
9.5
OUTLINE
VERSION
b
c
D
max.
d
E
max.
e
e1
F
L
min.
p
4.15
2.04
0.51
0.25 27.2
13.75 2.54 5.08 12.7 8.8
3.85
2.54
0.38
REFERENCES
IEC
JEDEC
JEITA
q
q1
q2
S
U1
U2
W
w
x
2.4 38.1 25.4 10.2 4.2 44.75 8.2 6-32 0.25 0.7
44.25 7.8 UNC
EUROPEAN
PROJECTION
y
Z
max.
0.1
3.8
ISSUE DATE
04-02-04
10-06-18
SOT115J
2001 Nov 01
Q
max.
11
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
CGD914; CGD914MI
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Limited warranty and liability  Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications  Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Right to make changes  NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use  NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
2001 Nov 01
12
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
CGD914; CGD914MI
Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
Quick reference data  The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products  Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Terms and conditions of commercial sale  NXP
Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
No offer to sell or license  Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control  This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
2001 Nov 01
13
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613518/06/pp14
Date of release: 2001 Nov 01
Document order number:
9397 750 08861