DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D252 CGD914; CGD914MI 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2000 Jul 25 2001 Nov 01 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier FEATURES CGD914; CGD914MI PINNING - SOT115J Excellent linearity DESCRIPTION PIN Extremely low noise CGD914 Excellent return loss properties 1 Rugged construction 2 and 3 Gold metallization ensures excellent reliability. 5 7 and 8 APPLICATIONS 9 CGD914MI input output common common +VB +VB common common output input CATV systems operating in the 40 to 870 MHz frequency range. handbook, halfpage DESCRIPTION 1 Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC), employing both GaAs and Si dies. Both modules are electrically identical, only the pinning is different. 2 3 5 7 Side view 8 9 MSA319 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL Gp Itot PARAMETER CONDITIONS power gain total current consumption (DC) MIN. MAX. UNIT f = 45 MHz 19.75 20.25 dB f = 870 MHz 20.2 21.5 dB VB = 24 V 345 375 mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT VB supply voltage 30 Vi RF input voltage single tone 70 dBmV 132 channels flat 45 dBmV V Tstg storage temperature 40 +100 C Tmb operating mounting base temperature 20 +100 C 2001 Nov 01 2 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI CHARACTERISTICS Bandwidth 45 to 870 MHz; VB = 24 V; Tmb = 35 C; ZS = ZL = 75 SYMBOL Gp PARAMETER power gain CONDITIONS MIN. TYP. MAX. UNIT f = 45 MHz 19.75 20 20.25 dB f = 870 MHz 20.2 21 21.5 dB SL slope straight line f = 45 to 870 MHz 0.2 1 1.5 dB FL flatness straight line f = 45 to 100 MHz 0.25 0.25 dB f = 100 to 800 MHz 0.6 +0.4 dB f = 800 to 870 MHz 0.45 +0.2 dB flatness narrow band in each 6 MHz segment 0.1 dB input return losses f = 40 to 80 MHz 20 dB f = 80 to 160 MHz 20 dB s11 s22 output return losses f = 160 to 320 MHz 18 dB f = 320 to 550 MHz 16 dB f = 550 to 650 MHz 15 dB f = 650 to 750 MHz 14 dB f = 750 to 870 MHz 14 dB f = 870 to 914 MHz 10 dB f = 40 to 80 MHz 21 dB f = 80 to 160 MHz 21 dB f = 160 to 320 MHz 20 dB f = 320 to 550 MHz 19 dB f = 550 to 650 MHz 18 dB f = 650 to 750 MHz 17 dB f = 750 to 870 MHz 16 dB f = 870 to 914 MHz 14 dB s21 phase response f = 50 MHz 45 +45 deg s12 reverse isolation RFout to RFin 22 dB CTB composite triple beat 79 chs; fm = 445.25 MHz; note 1 76 dB 112 chs; fm = 649.25 MHz; note 2 64 dB 132 chs; fm = 745.25 MHz; note 3 55 dB 79 chs flat; Vo = 44 dBmV; fm = 547.25 MHz 73 dB Xmod cross modulation 2001 Nov 01 112 chs flat; Vo = 44 dBmV; fm = 745.25 MHz 64 dB 132 chs flat; Vo = 44 dBmV; fm = 745.25 MHz 60 dB 79 chs; fm = 55.25 MHz; note 1 70 dB 112 chs; fm = 55.25 MHz; note 2 62 dB 132 chs; fm = 55.25 MHz; note 3 57 dB 79 chs flat; Vo = 44 dBmV; fm = 55.25 MHz 69 dB 112 chs flat; Vo = 44 dBmV; fm = 55.25 MHz 65 dB 132 chs flat; Vo = 44 dBmV; fm = 55.25 MHz 63 dB 3 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier SYMBOL PARAMETER CSO Sum composite second order distortion (sum) CSO Diff NF d2 Vo Itot composite second order distortion (diff) noise figure second order distortion output voltage total current consumption (DC) CGD914; CGD914MI CONDITIONS 79 chs; fm = 446.5 MHz; note 1 MIN. TYP. MAX. 71 UNIT dB 112 chs; fm = 746.5 MHz; note 2 60 dB 132 chs; fm = 860.5 MHz; note 3 56 dB 79 chs flat; Vo = 44 dBmV; fm = 548.5 MHz 63 dB 112 chs flat; Vo = 44 dBmV; fm = 746.5 MHz 54 dB 132 chs flat; Vo = 44 dBmV; fm = 860.5 MHz 49 dB 79 chs; fm = 150 MHz; note 1 59 dB 112 chs; fm = 150 MHz; note 2 53 dB 132 chs; fm = 150 MHz; note 3 48 dB 79 chs flat; Vo = 44 dBmV; fm = 150 MHz 60 dB 112 chs flat; Vo = 44 dBmV; fm = 150 MHz 59 dB 132 chs flat; Vo = 44 dBmV; fm = 150 MHz 57 dB f = 50 MHz 2.5 3 dB f = 550 MHz 2.5 3 dB f = 750 MHz 2.6 3.5 dB f = 870 MHz 3 3.5 dB note 4 60 dB note 5 54 dB note 6 50 dB dim = 60 dB; note 7 69 dBmV dim = 60 dB; note 8 66 dBmV dim = 60 dB; note 9 63 dBmV note 10 345 360 375 mA Notes 1. Vo = 38 dBmV at 54 MHz; Tilt = 7.3 dB (55 to 547 MHz) extrapolated to 12 dB at 870 MHz. 2. Vo = 38 dBmV at 54 MHz; Tilt = 10.2 dB (55 to 745 MHz) extrapolated to 12 dB at 870 MHz. 3. Vo = 38 dBmV at 54 MHz; Tilt = 12 dB (55 to 865 MHz). 4. fp = 55.25 MHz; Vp = 60 dBmV; fq = 493.25 MHz; Vq = 60 dBmV; measured at fp + fq = 548.5 MHz. 5. fp = 55.25 MHz; Vp = 60 dBmV; fq = 691.25 MHz; Vq = 60 dBmV; measured at fp + fq = 746.5 MHz. 6. fp = 55.25 MHz; Vp = 60 dBmV; fq = 805.25 MHz; Vq = 60 dBmV; measured at fp + fq = 860.5 MHz. 7. Measured according to DIN45004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo 6 dB; fr = 549.25 MHz; Vr = Vo 6 dB; measured at fp + fq fr = 538.25 MHz. 8. Measured according to DIN45004B: fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo 6 dB; fr = 749.25 MHz; Vr = Vo 6 dB; measured at fp + fq fr = 738.25 MHz. 9. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo 6 dB; fr = 860.25 MHz; Vr = Vo 6 dB; measured at fp + fq fr = 849.25 MHz. 10. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 2001 Nov 01 4 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier MCD976 −60 handbook, halfpage (1) CTB (dB) CGD914; CGD914MI MCD977 −60 52 handbook, halfpage Xmod Vo (dBmV) (1) 52 Vo (dBmV) (dB) −70 48 −70 48 −80 44 −80 44 (2) (3) (4) −90 (2) −90 40 40 (3) (4) −100 200 0 400 600 −100 36 1000 800 f (MHz) 200 0 400 600 36 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (1) Vo. (2) Typ. +3 . Fig.2 (3) Typ. (4) Typ. 3 . Composite triple beat as a function of frequency under tilted conditions. MCD978 −50 handbook, halfpage (1) CSO (dB) Fig.3 (2) CSO (dB) Vo 54 (2) (1) −60 (3) −70 (4) 46 44 −80 40 200 0 400 600 −80 42 −90 38 −100 36 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). 0 200 400 (1) Vo. (3) Typ. (1) Vo. (3) Typ. (4) Typ. 3 . (2) Typ. +3 . (4) Typ. 3 . Composite second order distortion (sum) as a function of frequency under tilted conditions. 2001 Nov 01 600 34 800 1000 f (MHz) ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). (2) Typ. +3 . Fig.4 Vo (dBmV) 50 48 (4) −90 MCD979 handbook, halfpage (3) −70 Cross modulation as a function of frequency under tilted conditions. −50 52 (dBmV) −60 (3) Typ. (4) Typ. 3 . Fig.5 5 Composite second order distortion (diff) as a function of frequency under tilted conditions. NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier MCD980 −60 handbook, halfpage CGD914; CGD914MI handbook, halfpage Xmod Vo (dBmV) CTB (dB) −70 (1) MCD981 −60 48 Vo (dBmV) (dB) −70 44 48 (1) 44 (2) (2) −80 (3) −80 40 40 (4) (3) −90 0 200 400 600 (4) −90 36 800 1000 f (MHz) 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz). ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (1) Vo. (2) Typ. +3 . Fig.6 (3) Typ. (4) Typ. 3 . Composite triple beat as a function of frequency under flat conditions. MCD982 −50 handbook, halfpage Fig.7 MCD983 handbook, halfpage CSO (dB) (1) −60 Cross modulation as a function of frequency under flat conditions. −50 48 Vo (dBmV) CSO (dB) 48 Vo (dBmV) (2) −60 44 (2) (1) 44 (3) (3) −70 (3) Typ. (4) Typ. 3 . (4) 40 −70 40 36 −80 36 32 1000 800 f (MHz) −90 (4) −80 −90 200 0 400 600 ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz). 200 0 400 (1) Vo. (3) Typ. (1) Vo. (3) Typ. (4) Typ. 3 . (2) Typ. +3 . (4) Typ. 3 . Composite second order distortion (sum) as a function of frequency under flat conditions. 2001 Nov 01 32 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz). (2) Typ. +3 . Fig.8 600 Fig.9 6 Composite second order distortion (diff) as a function of frequency under flat conditions. NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier MCD984 −40 handbook, halfpage (1) CTB (dB) CGD914; CGD914MI MCD985 −50 52 handbook, halfpage (1) Xmod Vo (dBmV) 52 Vo (dBmV) (dB) −50 48 −60 48 −60 44 −70 44 (2) (2) −70 (3) −80 40 40 (3) (4) −80 0 200 400 600 −90 36 1000 800 f (MHz) (4) 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz). ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . Fig.10 Composite triple beat as a function of frequency under tilted conditions. MCD986 −50 handbook, halfpage (1) CSO (dB) (2) (3) −60 (3) Typ. (4) Typ. 3 . Fig.11 Cross modulation as a function of frequency under tilted conditions. MCD987 −50 52 handbook, halfpage Vo (dBmV) (1) CSO (dB) 52 Vo (dBmV) 48 −60 48 44 −70 44 (4) −70 (2) −80 −80 40 40 (3) −90 0 200 400 600 −90 36 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz). (4) 0 200 400 36 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz). (1) Vo. (3) Typ. (1) Vo. (3) Typ. (2) Typ. +3 . (4) Typ. 3 . (2) Typ. +3 . (4) Typ. 3 . Fig.12 Composite second order distortion (sum) as a function of frequency under tilted conditions. 2001 Nov 01 600 Fig.13 Composite second order distortion (diff) as a function of frequency under tilted conditions. 7 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier MCD988 −50 handbook, halfpage CGD914; CGD914MI handbook, halfpage Xmod Vo (dBmV) CTB (dB) −60 (1) MCD989 −60 48 Vo (dBmV) (dB) −70 44 (1) −70 44 (2) (2) (3) (4) 48 −80 40 40 (3) −80 −90 36 36 (4) −90 0 200 400 600 −100 32 1000 800 f (MHz) 0 200 400 600 32 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 112 chs flat (50 to 750 MHz). ZS = ZL = 75 ; VB = 24 V; 112 chs flat (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . Fig.14 Composite triple beat as a function of frequency under flat conditions. MCD990 −50 (2) handbook, halfpage CSO (dB) −60 (3) Typ. (4) Typ. 3 . Fig.15 Cross modulation as a function of frequency under flat conditions. (3) Vo (4) (dBmV) (1) 44 MCD991 −50 48 handbook, halfpage CSO (dB) 48 Vo (dBmV) (2) −60 (1) 44 (3) −70 40 −70 −80 36 −80 32 1000 800 f (MHz) −90 −90 0 200 400 600 ZS = ZL = 75 ; VB = 24 V; 112 chs flat (50 to 750 MHz). (4) 40 36 0 200 400 32 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 112 chs; flat (50 to 750 MHz). (1) Vo. (3) Typ. (1) Vo. (3) Typ. (2) Typ. +3 . (4) Typ. 3 . (2) Typ. +3 . (4) Typ. 3 . Fig.16 Composite second order distortion (sum) as a function of frequency under flat conditions. 2001 Nov 01 600 Fig.17 Composite second order distortion (diff) as a function of frequency under flat conditions. 8 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier MCD992 −40 handbook, halfpage (1) CTB (dB) CGD914; CGD914MI handbook, halfpage Xmod Vo (dBmV) −50 MCD993 −50 52 (1) −60 44 −70 48 (2) −60 (3) (2) (4) −70 Vo (dBmV) (dB) 48 52 44 (3) −80 40 40 (4) −80 0 200 400 600 −90 36 1000 800 f (MHz) 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz). ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . Fig.18 Composite triple beat as a function of frequency under tilted conditions. MCD994 −40 handbook, halfpage CSO (dB) Fig.19 Cross modulation as a function of frequency under tilted conditions. CSO (dB) (1) −50 −60 48 −60 40 0 200 400 600 (4) 44 44 (4) −70 −70 40 −80 36 −90 36 800 1000 f (MHz) ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz). 0 200 400 600 32 800 1000 f (MHz) ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz). (1) Vo. (3) Typ. (1) Vo. (3) Typ. (2) Typ. +3 . (4) Typ. 3 . (2) Typ. +3 . (4) Typ. 3 . Fig.20 Composite second order distortion (sum) as a function of frequency under tilted conditions. 2001 Nov 01 Vo (dBmV) (3) (2) −80 (2) 48 (3) 52 handbook, halfpage (dBmV) −50 MCD995 −40 52 Vo (1) (3) Typ. (4) Typ. 3 . Fig.21 Composite second order distortion (diff) as a function of frequency under tilted conditions. 9 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier MCD996 −40 handbook, halfpage CGD914; CGD914MI handbook, halfpage Xmod Vo (dBmV) CTB (dB) −50 (1) MCD997 −60 48 Vo (dBmV) (dB) −70 44 48 (1) 44 (2) −60 40 −80 36 −90 32 1000 800 f (MHz) −100 (2) (3) 40 (3) (4) −70 −80 0 200 400 600 (4) 200 0 400 600 32 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz). ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . Fig.22 Composite triple beat as a function of frequency under flat conditions. MCD998 −50 handbook, halfpage (2) CSO (dB) (3) −60 (1) (4) 36 (3) Typ. (4) Typ. 3 . Fig.23 Cross modulation as a function of frequency under flat conditions. MCD999 −40 48 handbook, halfpage Vo (dBmV) Vo (dBmV) CSO (dB) −50 44 48 (1) 44 (2) −70 −60 40 40 (3) −80 −90 0 200 400 600 36 −70 32 1000 800 f (MHz) −80 (4) 0 36 200 400 600 32 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz). ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz). (1) Vo. (3) Typ. (2) Typ. +3 . (4) Typ. 3 . (1) Vo. (2) Typ. +3 . Fig.24 Composite second order distortion (sum) as a function of frequency under flat conditions. 2001 Nov 01 (3) Typ. (4) Typ. 3 . Fig.25 Composite second order distortion (diff) as a function of frequency under flat conditions. 10 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 2 3 5 7 8 9 A L F S W c e b w M e1 d U2 q2 Q B y M B q1 x M B y M B p U1 q 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. mm 20.8 9.5 OUTLINE VERSION b c D max. d E max. e e1 F L min. p 4.15 2.04 0.51 0.25 27.2 13.75 2.54 5.08 12.7 8.8 3.85 2.54 0.38 REFERENCES IEC JEDEC JEITA q q1 q2 S U1 U2 W w x 2.4 38.1 25.4 10.2 4.2 44.75 8.2 6-32 0.25 0.7 44.25 7.8 UNC EUROPEAN PROJECTION y Z max. 0.1 3.8 ISSUE DATE 04-02-04 10-06-18 SOT115J 2001 Nov 01 Q max. 11 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe 2001 Nov 01 12 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 2001 Nov 01 13 NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2010 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613518/06/pp14 Date of release: 2001 Nov 01 Document order number: 9397 750 08861