Hardware Documentation Data Sheet ® HAL 411 Linear Hall-Effect Sensor IC Edition Dec. 8, 2008 DSH000019_002EN HAL411 DATA SHEET Copyright, Warranty, and Limitation of Liability Micronas Trademarks The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. – HAL Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Micronas Patents Choppered Offset Compensation protected by Micronas patents no. US5260614A, US5406202A, EP052523B1, and EP0548391B1. Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the documents content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. 2 Micronas HAL411 DATA SHEET Contents Page Section Title 4 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. Introduction Features Marking Code Operating Junction Temperature Range Hall Sensor Package Codes Solderability and Welding 5 5 2. 2.1. Functional Description Offset Compensation 6 6 7 7 7 7 8 8 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics 15 15 15 15 4. 4.1. 4.2. 4.3. Application Notes Ambient Temperature EMC and ESD Application Circuit 18 5. Data Sheet History Micronas 3 HAL411 DATA SHEET Linear Hall Effect Sensor IC in CMOS technology 1.2. Marking Code Release Notes: Revision bars indicate significant changes to the previous edition. All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. 1. Introduction 1.3. Operating Junction Temperature Range The HAL 411 is a Linear Hall Effect Sensor produced in CMOS technology. The sensor includes a temperaturecompensated Hall plate with choppered offset compensation, two linear output stages, and protection devices (see Fig. 2–1). The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). The output voltage is proportional to the magnetic flux density through the hall plate. The choppered offset compensation leads to stable magnetic characteristics over supply voltage and temperature. E: TJ = –40 °C to +100 °C The HAL 411 can be used for magnetic field measurements, current measurements, and detection of any mechanical movement. Very accurate angle measurements or distance measurements can also be done. The sensor is very robust and can be used in electrically and mechanically hostile environments. The sensor is designed for industrial and automotive applications and operates in the ambient temperature range from –40 °C up to 100 °C and is available in the SMD-package SOT-89B. 1.1. Features: – switching offset compensation at 147 kHz – low magnetic offset – extremely sensitive – operates from 4.9 to 5.1 V supply voltage The HAL 411 is available in the temperature range “E” only. The relationship between ambient temperature (TA) and junction temperature (TJ) is explained in section 4.1. on page 15. 1.4. Hall Sensor Package Codes HALXXXPA-T Temperature Range: E Package: SF for SOT-89B Type: 411 Example: HAL411SF-E → Type: 411 → Package: SOT-89B → Temperature Range: TJ = –40 °C to +100 °C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Ordering Codes for Hall Sensors”. – overvoltage protection – reverse voltage protection of VDD-pin – differential output – accurate absolute measurements of DC and low frequency magnetic fields – on-chip temperature compensation – low 1/f-noise 1 VDD 3 OUT1 OUT2 GND Fig. 1–1: Pin configuration 4 Soldering During soldering reflow processing and manual reworking, a component body temperature of 260 °C should not be exceeded. Welding 2 4 1.5. Solderability and Welding Device terminals should be compatible with laser and resistance welding. Please note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. A very close control of the welding parameters is absolutely necessary in order to reach satisfying results. Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. Micronas HAL411 DATA SHEET 2.1. Offset Compensation (see Fig. 2–2) 2. Functional Description GND The Hall Offset Voltage is the residual voltage measured in absence of a magnetic field (zero-field residual voltage). This voltage is caused by mechanical stress and can be modeled by a displacement of the connections for voltage measurement and/or current supply. 4 Chopper Oscillator Temp. Dependent Bias Offset Compensation; Hallplate Compensation of this kind of offset is done by cyclically commuting the connections for current flow and voltage measurement. Switching Matrix – First cycle: The hall supply current flows between points 4 and 2. In the absence of a magnetic field, V13 is the Hall Offset Voltage (+VOffs). In case of a magnetic field, V13 is the sum of the Hall voltage (VH) and VOffs. V13 = VH + VOffs Protection Device VDD OUT1 OUT2 1 2 3 – Second cycle: The hall supply current flows between points 1 and 3. In the absence of a magnetic field, V24 is the Hall Offset Voltage with negative polarity (–VOffs). In case of a magnetic field, V24 is the difference of the Hall voltage (VH) and VOffs. V24 = VH – VOffs Fig. 2–1: Block diagram of the HAL 411 (package outline in top view) The differential output voltage consists of two components due to the switching offset compensation technique. The average of the differential output voltage represents the magnetic flux density. This component is overlaid by a differential AC signal at a typical frequency of 147 kHz. The AC signal represents the internal offset voltages of amplifiers and hall plates that are influenced by mechanical stress and temperature cycling. In the first cycle, the output shows the sum of the Hall voltage and the offset; in the second, the difference of both. The difference of the mean values of VOUT1 and VOUT2 (VOUTDIF) is equivalent to VHall. External filtering or integrating measurement can be done to eliminate the AC component of the signal. As a result, the influence of mechanical stress and temperature cycling is suppressed. No adjustment of magnetic offset is needed. The sensitivity is stabilized over a wide range of temperature and supply voltage due to internal voltage regulation and circuits for temperature compensation. for Bu0 mT V 1 1 4 VOffs IC VOUT1 IC Note: The numbers do not represent pin numbers. VOffs 2 VCM VOUTDIF/2 VOUTDIF VOUTDIF/2 VOUTAC 2 3 4 3 V a) Offset Voltage 1/fCH = 6.7 μs VOUT2 V b) Switched Current Supply c) Output Voltage t Fig. 2–2: Hall Offset Compensation Micronas 5 HAL411 DATA SHEET 3. Specifications 3.1. Outline Dimensions Fig. 3–1: SOT89B-1: Plastic Small Outline Transistor package, 4 leads Ordering code: SF Weight approximately 0.034 g 6 Micronas HAL411 DATA SHEET 3.2. Dimensions of Sensitive Area 0.37 mm x 0.17 mm 3.3. Positions of Sensitive Areas SOT-89B y 0.95 mm nominal 3.4. Absolute Maximum Ratings Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Max. Unit VDD Supply Voltage 1 –12 12 V VO Output Voltage 2, 3 –0.3 12 V IO Continuous Output Current 2, 3 –5 5 mA TJ Junction Temperature Range –40 170 °C TA Ambient Temperature at VDD = 5 V at VDD = 12 V – – 150 125 °C °C 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. Micronas 7 HAL411 DATA SHEET 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device. All voltage listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Max. Unit Remarks IO Continuous Output Current 2, 3 –2.25 2.25 mA TJ = 25 °C IO Continuous Output Current 2, 3 –1 1 mA TJ = 100 °C CL Load Capacitance 2, 3 – 1 nF VDD Supply Voltage 1 4.9 5.1 V B Magnetic Field Range –50 50 mT –40 °C ≤ TJ ≤ 100 °C 3.6. Characteristics at TJ = –40 °C to +100 °C, VDD = 4.9 V to 5.1 V, at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical characteristics for TJ = 25 °C, VDD = 5 V and –50 mT < B < 50 mT 8 Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions IDD Supply Current 1 11 14.5 17.1 mA TJ = 25 °C, IOUT1,2 = 0 mA IDD Supply Current over Temperature Range 1 9 14.5 18.5 mA IOUT1,2 = 0 mA VCM Common Mode Output Voltage VCM = (VOUT1 + VOUT2 ) / 2 2, 3 2.1 2.2 2.3 V IOUT1,2 = 0 mA, CMRR Common Mode Rejection Ratio 2, 3 –2.5 0 2.5 mV/V IOUT1,2 = 0 mA, CMRR is limited by the influence of power dissipation. SB Differential Magnetic Sensitivity over Temperature Range 2–3 33 42.5 50 mV/mT –50 mT < B < 50 mT Boffset Magnetic Offset over Temperature 2–3 –1.5 –0.2 1.5 mT B = 0 mT, IOUT1,2 = 0 mA ΔBOFFSET/Δ T Magnetic Offset Change –25 0 25 μT/K B = 0 mT, IOUT1,2 = 0 mA BW Bandwidth (–3 dB) 2–3 – 10 – kHz without external Filter1) NLdif Non-Linearity of Differential Output 2–3 – 0.5 2 % –50 mT < B < 50 mT NLsingle Non-Linearity of Single Ended Output 2, 3 – 2 – % fCH Chopper Frequency over Temp. 2, 3 – 147 – kHz VOUTACpp Peak-to-Peak AC Output Voltage 2, 3 – 0.6 1.3 V nmeff Magnetic RMS Differential Broadband Noise 2–3 – 10 – μT BW = 10 Hz to 10 kHz fCflicker Corner Frequency of 1/f Noise 2–3 – 10 – Hz B = 0 mT Micronas HAL411 DATA SHEET Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions fCflicker Corner Frequency of 1/f Noise 2–3 – 100 – Hz B = 50 mT ROUT Output Impedance 2, 3 – 30 50 Ω TA = 25 °C, IOUT1,2 v 2.5 mA ROUT Output Impedance over Temperature 2, 3 – 30 150 Ω IOUT1,2 v 2.5 mA RthJSB case Thermal Resistance Junction to Substrate Backside – 150 200 K/W Fiberglass Substrate 30 mm x 10 mm x 1.5 mm pad size see Fig. 3–2 1) with external 2 pole filter (f3db = 5 kHz), VOUTAC is reduced to less than 1 mV by limiting the bandwidth 1.80 1.05 1.45 2.90 1.05 0.50 1.50 Fig. 3–2: Recommended footprint SOT89B, Dimensions in mm Note: All dimensions are for reference only. The pad size may vary depending on the requirements of the soldering process. Micronas 9 HAL411 DATA SHEET V 5 VOUT1 VOUT2 % 1.5 TA = 25 °C VDD = 5.0 V NLdif 4 VOUT1 TA = 25 °C 1.0 VOUT2 0.5 3 0.0 2 –0.5 1 –1.0 0 –150 –100 –50 0 50 100 –1.5 –80 –60 –40 –20 150 mT 0 20 40 B 80 mT 60 B Fig. 3–3: Typical output voltages versus magnetic flux density Fig. 3–5: Typical non-linearity of differential output versus magnetic flux density mT 0.50 mV/mT 50 B = ±50 mT B = 0 mT 0.25 BOFFS SB 45 0.00 –0.25 40 –0.50 –0.75 35 –1.00 –1.25 –1.5 –50 –25 0 25 50 75 100 °C TA Fig. 3–4: Typical magnetic offset of differential output versus ambient temperature 10 30 –50 –25 0 25 50 75 100 °C TA Fig. 3–6: Typical differential magnetic sensitivity versus ambient temperature Micronas HAL411 DATA SHEET % 1.5 % 3 VDD = 5.0 V VDD = 5.0 V 1.0 NLdif NLsingle 2 0.5 1 0.0 0 –0.5 –1 TA = –40 °C TA = –40 °C –1.0 –1.5 –80 –60 –40 –20 TA = 25 °C TA = 100 °C 0 20 40 TA = 25 °C –2 60 TA = 100 °C –3 –80 –60 –40 –20 80 mT 0 20 B NLsingle 60 80 mT B Fig. 3–7: Typical non-linearity of differential output versus magnetic flux density % 3 40 Fig. 3–9: Typical non-linearity of singleended output versus magnetic flux density kHz 200 TA = 25 °C 2 fCH 180 1 160 0 140 –1 120 –2 –3 –80 –60 –40 –20 0 20 40 60 80 mT B Fig. 3–8: Typical single-ended non-linearity versus magnetic flux density Micronas 100 –50 –25 0 25 50 75 100 °C TA Fig. 3–10: Typical chopper frequency versus ambient temperature 11 HAL411 DATA SHEET V 2.25 mA 25 2.24 20 VCM 2.23 IDD 15 2.22 10 2.21 5 2.20 0 2.19 –5 2.18 –10 2.17 –15 2.16 –20 IOUT1,2 = 0 mA TA = –40 °C 2.15 –50 –25 0 25 50 75 –25 –15 100 °C TA = 25 °C TA = 100 °C –10 –5 0 5 TA 15 V 10 VDD Fig. 3–11: Typical common mode output voltage versus ambient temperature Fig. 3–13: Typical supply current versus supply voltage mV 1000 mA 20 B = 0 mT VOUT1pp, VOUT2pp IDD 800 15 600 10 400 5 200 0 –50 –25 0 25 50 75 TA Fig. 3–12: Typical output AC voltage versus ambient temperature 12 100 °C 0 –50 –25 0 25 50 75 100 °C TA Fig. 3–14: Typical supply current versus temperature Micronas HAL411 DATA SHEET Ω 100 mA 20 B = 0 mT IOUT1,2 = 0 mA IDD ROUT 80 15 60 10 40 TA = –40 °C 5 TA = 25 °C 20 TA = 100 °C 0 2 3 4 5 6 7 0 –50 8 V –25 0 25 VDD 50 75 100 °C TA Fig. 3–15: Typical supply current versus supply voltage Fig. 3–17: Typical dynamic differential output resistance versus temperature dB 20 mA 25 TA = 25 °C 0 dB = 42.5 mV/mT B = 0 mT IDD 20 sB 10 0 15 –10 10 –20 5 0 –6 –30 –4 –2 0 2 4 IOUT1,2 Fig. 3–16: Typical supply current versus output current Micronas 6 mA –40 10 10 100 100 1000 1k 10000 10 k 100000 100 k fB Fig. 3–18: Typical magnetic frequency response 13 HAL411 DATA SHEET dBT rms ǸHz –100 TA = 25 °C nmeff –110 B = 0 mT B = 65 mT –120 –130 –140 83 nT ǸHz –150 0.1 10.0 1000000.0 0.1 1.0 1 10 100.0 100 1000.0 1k 10000.0 10k 100000.0 100k 1M Hz f Fig. 3–19: Typical magnetic noise spectrum 14 Micronas HAL411 DATA SHEET 4. Application Notes 4.3. Application Circuit Mechanical stress on the device surface (caused by the package of the sensor module or overmolding) can influence the sensor performance. The normal integrating characteristics of a voltmeter is sufficient for signal filtering. The parameter VOUTACpp (see Fig. 2–2) increases with external mechanical stress. This can cause linearity errors at the limits of the recommended operation conditions. VDD 4.7n 1 VDD 47 n 330 p Oscilloscope HAL 411 OUT1 4.1. Ambient Temperature Due to internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + ΔT At static conditions and continuous operation, the following equation applies: 2 Ch1 3.3 k 6.8 n 3.3 k 1k OUT2 3 1k Ch2 47 n 330 p GND 4 Do not connect OUT1 or OUT2 to Ground. Fig. 4–1: Filtering of output signals ΔT = IDD * VDD * RthJSB For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax – ΔT Display the difference between channel 1 and channel 2 to show the Hall voltage. Capacitors 4.7 nF and 330 pF for electromagnetic immunity are recommended. VDD 1 VDD Voltage Meter HAL 411 OUT1 2 High 4.2. EMC and ESD Please contact Micronas for detailed information on EMC and ESD results. OUT2 3 Low GND 4 Do not connect OUT1 or OUT2 to Ground. Fig. 4–2: Flux density measurement with voltmeter Micronas 15 HAL411 DATA SHEET VCC VDD 4.7n 1 VDD 1.33 C 330 p R+ΔR 0.75 R HAL 411 OUT1 OUT2 ADC 1.5 R 2 – R 3 0.22 R CMOS OPV + 330 p 4.4 C R–ΔR GND 4 3C Do not connect OUT1 or OUT2 to Ground. Fig. 4–3: Differential HAL 411 output to single-ended output R = 10 kΩ, C = 7.5 nF, ΔR for offset adjustment, BW–3dB = 1.3 kHz VCCy6 V VDD 2.2 n 4.7 n 1 330 p VDD 4.7 k HAL 411 OUT1 2 – 4.7 k OUT2 3 CMOS OPV + 4.7 k 330 p 4.7 k 4.7 n 1n 4.7 k – 4.7 k 3.0 k 8.2 n CMOS OPV + OUT GND 4 Do not connect OUT1 or OUT2 to Ground. VEEx*6 V Fig. 4–4: Differential HAL 411 output to single-ended output (referenced to ground), filter – BW–3dB = 14.7 kHz 16 Micronas DATA SHEET Micronas HAL411 17 HAL411 DATA SHEET 5. Data Sheet History 1. Final data sheet: “HAL 411 Linear Hall Effect Sensor IC”, Aug. 6, 2003, 6251-584-1DS. First release of the final data sheet. 2. Final Data Sheet: “HAL 411 Linear Hall Effect Sensor IC”, Dec. 8, 2008, DSH000019_002EN Second release of the final data sheet. Major changes: – Section 1.5. “Solderability and Welding” updated – package diagrams updated – Section 3.4.1. “Storage and Shelf Life” updated Micronas GmbH Hans-Bunte-Strasse 19 · D-79108 Freiburg · P.O. Box 840 · D-79008 Freiburg, Germany Tel. +49-761-517-0 · Fax +49-761-517-2174 · E-mail: [email protected] · Internet: www.micronas.com 18 Micronas