HAT3015T Silicon N/P Channel Power MOS FET High Speed Power Switching REJ03G0405-0200 Rev.2.00 Sep.07.2004 Features • Low on-resistance • Capable of 4 V gate drive • High density mounting Outline TSSOP-8 8 D 1 D 87 5 G 4 G 12 34 1, 8 3, 6 4, 5 2, 7 Drain Source Gate NC S6 S3 MOS1 Nch 65 MOS2 Pch Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Pch Note3 Nch 200 ±15 0.5 2 0.5 1 Pch –200 ±15 –0.25 –1 –0.25 1 Unit V V A A A W 1.5 150 –55 to +150 1.5 150 –55 to +150 W °C °C Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s Rev.2.00, Sep.07.2004, page 1 of 3 HAT3015T Electrical Characteristics (Ta = 25°C) • N Channel Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leak current Zero Gate voltage Drain current Gate to Source cutoff voltage Static Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–Drain diode forward voltage Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) Min 200 ±15 — — 1.0 — — — 0.56 — — — — — — Typ Max Unit — — — — — 1.6 1.9 2.4 0.86 120 29 10 10 14 24 — — ±10 5 2.1 2.2 2.7 5.5 — — — — — — — V V µA µA V Ω Ω Ω S pF pF pF ns ns ns tf VDF — — 9 0.9 — 1.4 ns V Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF Min –200 ±15 — — –1.0 — — — 0.29 — — — — — — — — Typ — — — — — 5.0 6.0 7.0 0.45 140 37 10 12 9 25 15 –0.9 Max — — ±10 –5 –2.0 6.2 7.5 10.0 — — — — — — — — –1.4 Unit V V µA µA V Ω Ω Ω S pF pF pF ns ns ns ns V Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±12 V, VDS = 0 VDS = 200 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 0.5 A, VGS = 10 V Note4 ID = 0.5 A, VGS = 4 V Note4 ID = 2 A, VGS = 5 V Note4 ID = 0.5 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0 f = 1 MHz VGS = 5 V, ID = 0.5 A VDD ≅ 30 V IF = 0.5 A, VGS = 0 Note4 • P Channel Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leak current Zero Gate voltage Drain current Gate to Source cutoff voltage Static Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–Drain diode forward voltage Notes: 4. Pulse test Rev.2.00, Sep.07.2004, page 2 of 3 Test Conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±12 V, VDS = 0 VDS = –200 V, VGS = 0 VDS = –10 V, I D = –1 mA ID = –0.25 A, VGS = –10 V Note4 ID = –0.25 A, VGS = – 4 V Note4 ID = –1 A, VGS = – 5 V Note4 ID = –0.25 A, VDS = –10 V Note4 VDS = –10 V, VGS = 0 f = 1 MHz VGS = –5 V, ID = –0.25 A VDD ≅ –30 V IF = –0.25 A, VGS = 0 Note4 HAT3015T Package Dimensions As of January, 2003 Unit: mm 4.40 3.00 3.30 Max 8 5 1 4 0.65 1.0 *0.22 +0.08 –0.07 0.13 M 0.20 ± 0.06 6.40 ± 0.20 0.07 +0.03 –0.04 0.10 *0.17 ± 0.05 0.15 ± 0.04 1.10 Max 0.805 Max 0˚ – 8˚ 0.50 ± 0.10 Package Code JEDEC JEITA Mass (reference value) *Dimension including the plating thickness Base material dimension TTP-8D — — — Ordering Information Part Name HAT3015T-EL-E Quantity 3000 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00, Sep.07.2004, page 3 of 3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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