HAT2105R Silicon N Channel Power MOS FET High Speed Power Switching REJ03G1369-0100 Rev.1.00 Apr 04, 2006 Features • Low on-resistance • Capable of 4 V gate drive • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8<FP-8DAV>) 7 8 D D 8 5 7 6 2 G 3 1 2 5 6 D D 4 G 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain 4 S1 S3 MOS1 MOS2 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Pch Note3 Ratings 200 ±15 0.5 2 0.5 1.3 2 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s Rev.1.00 Apr 04, 2006 page 1 of 3 Unit V V A A A W W °C °C HAT2105R Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Notes: 4. Pulse test Rev.1.00 Apr 04, 2006 page 2 of 3 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF Min 200 ±15 — — 1.0 — — — 0.56 — — — — — — — — Typ — — — — — 1.6 1.9 2.4 0.86 120 29 10 10 14 24 9 0.9 Max — — ±10 5 2.1 2.2 2.7 5.5 — — — — — — — — 1.4 Unit V V µA µA V Ω Ω Ω S pF pF pF ns ns ns ns V Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±12 V, VDS = 0 VDS = 200 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 0.5 A, VGS = 10 V Note4 ID = 0.5 A, VGS = 4 V Note4 ID = 2 A, VGS = 5 V Note4 ID = 0.5 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz VGS = 5 V, ID = 0.5 A, VDD ≅ 30 V IF = 0.5 A, VGS = 0 Note4 HAT2105R Package Dimensions JEITA Package Code P-SOP8-3.95 × 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g F Package Name SOP-8 *1 D bp 1 c *2 E Index mark HE 5 8 4 Z Terminal cross section (Ni/Pd/Au plating) * 3 bp x M e NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Reference Dimension in Millimeters Symbol Min D E A2 A1 A bp b1 c c1 A1 A L1 L y HE e x y Z L L1 Detail F Nom Max 4.90 5.3 3.95 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 0° 8° 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08 Ordering Information Part Name HAT2105R-EL-E Quantity 2500 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00 Apr 04, 2006 page 3 of 3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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