H5N2515P Silicon N Channel MOS FET High Speed Power Switching REJ03G0413-0100 Rev.1.00 Sep.28.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D 1. Gate 2. Drain (Flange) 3. Source G S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Rev.1.00, Sep.28.2004, page 1 of 3 Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 Ratings 250 ±30 55 165 55 165 Unit V V A A A A IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg 19 22.5 200 0.625 150 –55 to +150 A mJ W °C/W °C °C H5N2515P Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: 4. Pulse test Rev.1.00, Sep.28.2004, page 2 of 3 Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Min 250 — — 3.0 23 — Typ — — — — 39 0.039 Max — 1 ±0.1 4.5 — 0.044 Unit V µA µA V S Ω Test conditions ID = 10 mA, VGS = 0 VDS = 250 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 27.5 A, VDS = 10 V Note4 ID = 27.5 A, VGS = 10 VNote4 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd — — — — — — — — — — 3800 530 56 50 240 170 170 92 24 38 — — — — — — — — — — pF pF pF ns ns ns ns nC nC nC VDD = 200 V VGS = 10 V ID = 55 A VDF trr Qrr — — — 1.03 200 1.4 1.60 — — V ns µC IF = 55 A, VGS = 0 Note4 IF = 55 A, VGS = 0 diF/dt = 100 A/µs VDS = 25 V VGS = 0 f = 1 MHz ID = 27.5 A VGS = 10 V RL = 4.55 Ω Rg = 10 Ω H5N2515P Package Dimensions 15.6 ± 0.3 Unit: mm 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 As of January, 2003 4.8 ± 0.2 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 5.45 ± 0.5 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 Package Code JEDEC JEITA Mass (reference value) TO-3P — Conforms 5.0 g Ordering Information Part Name H5N2515P-E Quantity 30 pcs Shipping Container Plastic magazine Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00, Sep.28.2004, page 3 of 3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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