H5N2512CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0481-0100 Rev.1.00 Nov.26.2004 Features • • • • Low on-resistance Low leakage current High Speed Switching Built-in fast recovery diode Outline TO-220CFM D 1. Gate 2. Drain 3. Source G 1 S 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Rev.1.00, Nov.26.2004, page 1 of 3 Symbol VDSS VGSS ID Note 1 ID(pulse) IDR Note 1 IDR(pulse) Note 3 IAP Pch Note 2 θch-c Tch Tstg Ratings 250 ±30 18 72 18 72 18 35 3.57 150 –55 to +150 Unit V V A A A A A W °C/W °C °C H5N2512CF Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body–drain diode forward voltage Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) Min 250 — — 1.5 — Typ — — — — 0.082 Max — ±0.1 10 4.0 0.105 Unit V µA µA V Ω Test Conditions ID = 10 mA, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 250 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 9 A, VGS = 10 V Note 4 |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd 9 — — — — — — — — — — 16 2200 300 85 32 60 160 60 81 10 38 — — — — — — — — — — — S pF pF pF ns ns ns ns nC nC nC ID = 9 A, VDS = 10 V Note 4 VDF 0.9 110 1.4 — V ns 0.39 — µC Body–drain diode reverse recovery time trr — — Body–drain diode reverse recovery time Notes: 4. Pulse test Qrr — Rev.1.00, Nov.26.2004, page 2 of 3 VDS = 25 V VGS = 0 f = 1MHz ID = 9 A RL = 13.9 Ω VGS = 10 V Rg = 10 Ω VDD = 200 V VGS = 10 V ID = 18 A IF = 18 A, VGS = 0 Note4 IF = 18 A, VGS = 0 diF/ dt = 100 A/µs H5N2512CF Package Dimensions As of January, 2003 Unit: mm 2.54 15.0 ± 0.3 4.5 ± 0.3 2.7 ± 0.2 2.5 ± 0.2 2.54 13.60 ± 1.0 0.6 ± 0.1 4.1 ± 0.3 1.0 ± 0.2 1.15 ± 0.2 φ 3.2 ± 0.2 12.0 ± 0.3 10.0 ± 0.3 0.7 ± 0.1 Package Code JEDEC JEITA Mass (reference value) TO-220CFM — — 1.9 g Ordering Information Part Name H5N3007CF Quantity 50 Shipping Container Stick Note: Therefore especially small contact area of terminal, miss contact may occur if inadequate soldering condition is applied. Contact Renesas sales office for any question regarding recommended soldering condition of Renesas. Rev.1.00, Nov.26.2004, page 3 of 3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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