Preliminary Datasheet RJK5003DPD R07DS0049EJ0400 (Previous: REJ03G0580-0300) Rev.4.00 Jul 22, 2010 Silicon N Channel Power MOS FET High Speed Power Switching Use Features VDSS : 500 V RDS(on) : 1.5 (MAX.) ID : 5 A Surface mount package (MP-3A) Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 2, 4 fo ot r n re c ew om de m si en gn d 4 1 12 3 1. 2. 3. 4. Gate Drain Source Drain 3 Applications Lighting ballast, SMPS, etc. Maximum Ratings N Parameter Drain to source voltage Gate to source voltage Drain current Drain Peak current Avalanche current Symbol Ratings Unit VDSS VGSS ID 500 30 5 V V A 20 5 A A Note1 ID (pulse) IAP Channel dissipation Pch 62.5 W Channel temperature Storage temperature Tch Tstg 150 –55 to +150 C C Channel to case thermal impedance ch-c 2.0 C/W Note: (Tc = 25°C) Conditions VGS = 0 V VDS = 0 V L = 200 H Channel to case 1. Pulse width limited by safe operating area. R07DS0049EJ0400 Rev.4.00 Jul 22, 2010 Page 1 of 6 RJK5003DPD Preliminary Electrical Characteristics (Tch = 25°C) Parameter Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage 2. Pulse test Typ. — — — 3.5 1.3 Max. — 1 0.1 4.0 1.5 Unit V mA A V Ciss Coss Crss td(on) tr td(off) tf VDF — — — — — — — — 550 60 10 20 20 60 25 1.0 — — — — — — — 1.5 pF pF pF ns ns ns ns V Test conditions ID = 1 mA, VGS = 0 V VDS = 500 V, VGS = 0 V VGS = 30 V, VDS = 0 V ID = 1 mA, VDS = 10 V ID= 2 A, VGS = 10 VNote2 VDS = 25 V, VGS= 0 V, f = 1 MHz VDD = 200 V, ID = 2 A, VGS = 10 V RG = 25 IF = 2 A, VGS = 0 V Note2 N Note: RDS(on) Min. 500 — — 3.0 — fo ot r n re c ew om de m si en gn d Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Symbol V(BR)DSS IDSS IGSS VGS(off) R07DS0049EJ0400 Rev.4.00 Jul 22, 2010 Page 2 of 6 RJK5003DPD Preliminary Main Characteristics Power vs. Temperature Derating Maximum Safe Operating Area 100 PW 60 Drain Current ID (A) Channel Dissipation Pch (W) 70 50 40 30 20 10 0 0.1 Operation in this area is limited by RDS(on) 0 50 100 150 0.01 1 200 10 fo ot r n re c ew om de m si en gn d Tc = 25°C Pulse Test 8 5 VGS = 20 V 7V 6V 6 5V 4 2 VGS = 20 V 7V 10 V 10 V PDS = 62.5 W 1000 Typical Output Characteristics Drain Current ID (A) 10 100 Drain to Source Voltage VDS (V) Typical Output Characteristics 5V 4 6V 3 Tc = 25°C Pulse Test 2 1 4V 4V 0 0 0 4 8 12 16 20 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage (Typical) Static Drain to Source on State Resistance vs. Drain Current (Typical) 20 Drain to Source on State Resistance RDS(on) (Ω) N Drain to Source Saturation Voltage VDS(on) (V) μs μs Tc = 25°C Single pulse Case Temperature Tc (°C) Drain Current ID (A) 10 DC 1 10 0 = 10 Tc = 25°C Pulse Test 16 ID = 8 A 12 8 5A 3A 4 0 0 4 8 12 16 Gate to Source Voltage VGS (V) R07DS0049EJ0400 Rev.4.00 Jul 22, 2010 20 4 Tc = 25°C Pulse Test 3.2 2.4 VGS = 10 V 1.6 20 V 0.8 0 10–1 100 101 102 Drain Current ID (A) Page 3 of 6 RJK5003DPD Preliminary Capacitance vs. Drain to Source Voltage (Typical) Transfer Characteristics (Typical) Capacitance (pF) Ciss 6 4 2 0 2 4 6 8 Coss 101 Crss 10 102 103 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Switching Characteristics (Typical) Gate to Source Voltage vs. Gate Charge (Typical) 103 7 5 Tch = 25°C VDD = 200 V VGS = 10 V RG = 25 Ω Pulse Test 3 2 102 7 5 td(off) tf 3 td(on) 2 tr 101 0 10 2 3 5 7 16 Tch = 25°C ID = 5 A VDS = 100 V 12 200 V 8 400 V 4 0 101 0 4 8 12 16 20 24 Reverse Drain Current vs. Source to Drain Voltage Characteristics (Typical) Breakdown Voltage vs. Channel Temperature (Typical) VGS = 0 V Pulse Test Ta = 25°C 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2 Source to Drain Voltage VSD (V) R07DS0049EJ0400 Rev.4.00 Jul 22, 2010 Drain to Source Breakdown Voltage V(BR)DSS (t°C) Drain to Source Breakdown Voltage V(BR)DSS (25°C) Gate Charge Qg (nC) N Drain Current ID (A) 10 Source Current IDR (A) 102 Tch = 25°C f = 1 MHz VGS = 0 V 0 10 100 101 Gate to Source Voltage VGS (V) 0 Switching Time (ns) 103 Tc = 25°C VDS = 10 V 8 Pulse Test fo ot r n re c ew om de m si en gn d Drain Current ID (A) 10 1.4 VGS = 0 V ID = 1 mA 1.2 1.0 0.8 0.6 0.4 –75 –25 25 75 125 175 Channel Temperature Tch (°C) Page 4 of 6 Preliminary Gate to Source Cutoff Voltage VGS(off) (V) Static Drain to Source on State Resistance vs. Channel Temperature (Typical) 101 VGS = 10 V 7 ID = 2 A 5 Pulse Test 4 3 2 10 0 7 5 4 3 2 10–1 –75 –25 25 75 125 175 Gate to Source Cutoff Voltage vs. Channel Temperature (Typical) 5.0 VDS = 10 V ID = 1 mA 4.0 3.0 2.0 1.0 0 –75 Channel Temperature Tch (°C) –25 25 75 125 175 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width 10 5 D=1 2 0.5 1 0.2 0.5 0.1 0.2 0.05 0.02 0.01 Single pulse 0.1 100 μ 1m fo ot r n re c ew om de m si en gn d Drain to Source on State Resistance RDS(on) (t°C) PDM D= PW T PW T 10 m 100 m 1 10 Pulse Width PW (s) N Normalized Transient Thermal Impedance γs (t) Drain to Source on State Resistance RDS(on) (25°C) RJK5003DPD Switching Time Measurement Circuit 90% Vout Monitor Vin Monitor RG Switching Waveform D.U.T. Vin Vout VDD 10% 10% 90% td(on) R07DS0049EJ0400 Rev.4.00 Jul 22, 2010 10% RL tr 90% td(off) tf Page 5 of 6 RJK5003DPD Preliminary Package Dimensions Previous Code ⎯ 0.76 ± 0.2 Unit: mm 2.3 0.5 ± 0.2 2.5Min 1Max 6.1 ± 0.2 6.6 5.3 ± 0.2 MASS[Typ.] 0.32g 0.76 0.1 ± 0.1 1.4 ± 0.2 RENESAS Code PRSS0004ZG-A 1 ± 0.2 JEITA Package Code SC-63 10.4Max Package Name MP-3A 0.5 ± 0.2 1 2.3 fo ot r n re c ew om de m si en gn d 2.3 ± 0.2 Ordering Information Quantity 3000 pcs Shipping Container Taping N Part Name RJK5003DPD-00-J2 R07DS0049EJ0400 Rev.4.00 Jul 22, 2010 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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