Preliminary Datasheet RJK5012DPP-M0 Silicon N Channel MOS FET High Speed Power Switching R07DS0421EJ0100 Rev.1.00 May 31, 2011 Features • Low on-resistance RDS(on) = 0.515 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2. Drain 3. Source G 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. Symbol VDSS VGSS IDNote4 ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Note2 Pch θch-c Tch Tstg Ratings 500 ±30 12 24 12 24 4 0.88 Unit V V A A A A A mJ 30 4.17 150 –55 to +150 W °C/W °C °C PW ≤ 10 μs, duty cycle ≤ 1% Value at Tc = 25°C STch = 25°C, Tch ≤ 150°C Limited by maximum safe operation area R07DS0421EJ0100 Rev.1.00 May 31, 2011 Page 1 of 6 RJK5012DPP-M0 Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Min 500 — — 3.0 — Typ — — — — 0.515 Max — 1 ±0.1 4.5 0.620 Unit V μA μA V Ω Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF — — — — — — — — — — — 1100 120 15 30 23 77 16 29 5.5 13 0.89 — — — — — — — — — — 1.50 pF pF pF ns ns ns ns nC nC nC V trr — 280 — ns Test conditions ID = 10 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 6 A, VGS = 10 V Note5 VDS = 25 V VGS = 0 f = 1 MHz ID = 6 A VGS = 10 V RL = 41.6 Ω Rg = 10 Ω VDD = 400 V VGS = 10 V ID = 12 A IF = 12 A, VGS = 0 Note5 IF = 12 A, VGS = 0 diF/dt = 100 A/μs Notes: 5. Pulse test R07DS0421EJ0100 Rev.1.00 May 31, 2011 Page 2 of 6 RJK5012DPP-M0 Preliminary Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 100 10 Drain Current ID (A) Channel Dissipation Pch (W) 40 30 20 10 10 = 10 0 μs μs 1 Operation in this area is limited by RDS(on) 0.1 0.01 Tc = 25°C 1 shot 0 0 50 100 150 0.001 0.1 200 1 1000 100 10 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 20 100 6V 7V 16 VDS = 10 V Pulse Test 5.8 V 10 V 5.6 V 12 5.4 V 8 5.2 V VGS = 5 V 4 Drain Current ID (A) Ta = 25°C Pulse Test Drain Current ID (A) PW 10 1 Tc = 75°C 25°C −25°C 4 8 12 16 0 20 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current (Typical) Static Drain to Source on State Resistance vs. Temperature (Typical) 1 0.3 VGS = 10 V Ta = 25°C Pulse Test 0.1 1 10 Drain Current ID (A) R07DS0421EJ0100 Rev.1.00 May 31, 2011 100 Static Drain to Source on State Resistance RDS(on) (Ω) Drain to Source on State Resistance RDS(on) (Ω) 0 0.1 2.0 VGS = 10 V Pulse Test 1.6 1.2 ID = 12 A 3A 0.8 6A 0.4 0 −25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 3 of 6 RJK5012DPP-M0 Preliminary Typical Capacitance vs. Drain to Source Voltage Body-Drain Diode Reverse Recovery Time (Typical) 10000 VGS = 0 f = 1 MHz Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 100 100 Coss 10 di / dt = 100 A / μs VGS = 0, Ta = 25°C 10 1 10 Ta = 25°C IDR (A) 4 VDD = 400 V 250 V 100 V 8 16 0 24 Gate Charge 32 40 Qg (nC) IDR (A) 8 300 VDS (V) 20 Reverse Drain Current 12 VDS 200 0 16 VGS (V) VDD = 100 V 250 V 400 V 600 400 VGS 200 Reverse Drain Current vs. Source to Drain Voltage (Typical) Gate to Source Voltage VDS (V) Drain to Source Voltage ID = 12 A Ta = 25°C 100 Drain to Source Voltage Dynamic Input Characteristics (Typical) 800 Crss 1 0 100 Reverse Drain Current Ciss 1000 Ta = 25°C Pulse Test 16 12 10 V 8 5V 4 VGS = 0 V, −5 V 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 VSD (V) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) Gate to Source Cutoff Voltage VGS(off) (V) 5 ID = 10 mA 4 1 mA 3 0.1 mA 2 1 VDS = 10 V 0 -25 0 25 50 75 Case Temperature R07DS0421EJ0100 Rev.1.00 May 31, 2011 100 125 150 Tc (°C) Page 4 of 6 RJK5012DPP-M0 Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 TC = 25°C 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 θch–c(t) = γS (t) • θch–c θch–c = 4.17°C/W, TC = 25°C PDM D = PW T PW T e uls tP 0.01 ho 1S 0.001 10 μ 100 μ 1m 10 m Pulse Width 100 m 1 10 PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL 10 Ω Vin 10 V VDD = 250 V Vin Vout 10% 10% 10% 90% td(on) R07DS0421EJ0100 Rev.1.00 May 31, 2011 tr 90% td(off) tf Page 5 of 6 RJK5012DPP-M0 Preliminary Package Dimensions Package Name TO-220FL JEITA Package Code ⎯ Previous Code TO-220FL RENESAS Code PRSS0003AF-A Unit: mm 6.5 ± 0.3 3.0 ± 0.3 2.8 ± 0.2 3.2 ± 0.2 3.6 ± 0.3 12.5 ± 0.5 15.0 ± 0.3 10.0 ± 0.3 MASS[Typ.] 1.5g 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Ordering Information Orderable Part Number RJK5012DPP-M0-T2 R07DS0421EJ0100 Rev.1.00 May 31, 2011 Quantity 600 pcs Shipping Container Box (Tube) Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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