^e.mi-Condwiko'i ZPtoauct*, LJna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N3637 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON TRANSISTOR gjtjgliili > FEATURES • High Voltage Switching (0.035)'"" • Low Power Amplifier Applications 7.7&JP305I, • Hermetic TO39 Package APPLICATIONS: *\ 1.14 JffWS}1' • General Purpose \ ' , ' V '. • High Speed Saturated Switching TO-39 METAL PACKAGE Underside View PIN 1 - Emitter PIN 2 - Base PIN 3 - Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEO Collector - Emitter Voltage VCBO Collector - Base Voltage VEBO Emmiter - Base Voltage Collector Current "c PD Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ Tc = 25°C Derate above 25°C PD Tj . TSTG Operating and Storage Junction Temperature Range 175V 175V 5V 1A 1W 5.71mW/°C 5W 28.6mW/°C -65 to +200°C \ .Semi-t i MtUuclon re.'Krvw ih« rlgM M vhanite t«l condiiiom. parameter limits ;ind packnga Jlnwnsiom wilhoiH nolic* Inltirroiilion lbmnh«d by NI S«mM. oiuhiclun h twiMved to h« hitlh acvuraM ,wd rdiuM* .11 lh« lint* of guinf i«> press, Houevcr v< I .vim t > pi.l»4.ii)'^ IMIIMNS ihi r^pt'iuibilily (i'f my ermn >>r mniviiiiiM JiKuvurnl in in IIM» >> ( Seini-C Mi n-.ri n-cfi fii viiit'i 'h ii t:ii:i--h..dj irei-iirrtnlh^frr*placing. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit BVCEO OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage1 lc = lOmA IB = 0 175 BVCBO Collector- Base Breakdown Voltage IE = 0 175 BVEBO Emitter - Base Breakdown Voltage lc = 0 !E = 10uAO 5.0 'EBO Emitter Cut-off Current VBE = s.ov ic = o 50 ICBO Collector Cut-off Current V CB =100V IE = 0 100 lc = 0.1mA VCE = 10V 80 lc = 1mA VCE = 10V 90 lc = 10mA VCE = 10V 100 lc = 50mA VCE = 10V 100 lc = 150mA VCE = 10V 50 lc lc lc lc IB = 1mA IB = 5mA IB = 1mA IB = 5mA lc = 100uA V nA ON CHARACTERISTICS hFE DC Current Gain = 10mA = 50mA = 10mA = 50mA vCE(sat) Collector - Emitter Saturation Voltage1 VeE(sat) Base - Emitter Saturation Voltage ft SMALL SIGNAL CHARACTERISTICS VCE = 20V Current Gain Bandwidth Product Cob Output Capacitance Cib Input Capacitance hje Input Impedance hre Voltage Feedback Ratio hfe Small Siganl Current Gain hoe Ourput Admittance IMF VCB = 20V lc = 50mA f= 100MHz 300 0.3 0.5 0.8 .65 0.9 200 IE = 0 'c = ° f = 100kHz 200 VCE = 10V l c =10mA f=1kHz VCE = 10V lc = 0.5mA Rs = 1.0ii f=1kHz V V MHz f = 100kHz VBE = 1.0V - 80 10 PF 75 pF 1200 a 3.0 x10'4 320 — 200 (imhos 3.0 dB SWITCHING CHARACTERISTICS ton Turn-On Time toff Turn-Off Time VCC = 100V c = 50mA VBE = 4.0V 400 IB1 = IB2 =5mA 600 ns