SEME 2N3904CSM LAB GENERAL PURPOSE NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 1 1.91 ± 0.10 (0.075 ± 0.004) • CECC SCREENING OPTIONS A 0.31 rad. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) A= 1.40 (0.055) max. 1.02 ± 0.10 (0.04 ± 0.004) Underside View PAD 2 – Emitter • HIGH SPEED SATURATED SWITCHING APPLICATIONS: SOT23 CERAMIC (LCC1 PACKAGE) PAD 1 – Base • SPACE QUALITY LEVELS OPTIONS PAD 3 – Collector Hermetically sealed surface mount version of the popular 2N3904 for high reliability / space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 60V VCEO Collector – Emitter Voltage 40V VEBO Emitter – Base Voltage 6V IC Collector Current PD Total Device Dissipation 200mA @ TA =25°C Derate above 25°C RθJA Thermal Resistance Junction – Ambient TSTG , TJ Operating and Storage Temperature Range Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 500mW 2.86mW / °C 350°C/W –55 to +200°C Prelim. 4/95 SEME 2N3904CSM LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)CEO* Collector – Emitter Breakdown Voltage IC = 1mA IB = 0 40 V(BR)CBO Collector – Base Breakdown Voltage IC = 10µA IE = 0 60 V(BR)EBO Emitter – Base Breakdown Voltage IE = 10µA IC = 0 6 ICEX Collector – Emitter Cut-off Current VCE = 30V VEB = 3V 50 VCE(sat) Collector – Emitter Saturation Voltage IC = 10mA IB = 1mA 0.2 IC = 50mA IB = 5mA 0.3 VBE(sat)* Base – Emitter Saturation Voltage IC = 10mA IB = 1mA IC = 50mA IB = 5mA hFE* DC Current Gain VCE = 1V V 0.65 nA 0.85 0.95 IC = 0.1mA 40 IC = 1mA 70 IC = 10mA 100 IC = 50mA 60 IC = 100mA 30 300 V V — * Pulse Test: tp ≤ 300µs, δ ≤ 2%. SMALL SIGNAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. ft Current Gain Bandwidth Product Cob Output Capacitance Cib Input Capacitance hie Input Impedance hoe Output Admittance hre Voltage Feedback Ratio hfe Small Signal Current Gain NF Noise Figure VCE = 20V IC = 10mA f = 100MHz VCB = 5V Typ. 300 MHz IE = 0 4 pF 8 pF 1 10 kΩ 1 40 µhmos 0.5 8 x 10-4 100 400 — 5 dB f = 1MHz VBE = 0.5V IC = 0 f = 1MHz VCE = 10V IC = 1mA f = 1kHz VCE = 5V IC = 100µA f = 1kHz RS = 1kΩ SWITCHING CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Max. Unit Min. Typ. Max. Unit td Delay Time VCC = 3V VBE = 0.5V 35 tr Rise Time IC = 10mA IB1 = 1mA 35 ts Storage Time VCC = 3V VBE = 0.5V 200 tf Fall Time IB1 = IB2 = 1mA Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. ns 50 Prelim. 4/95