SEME 2N2222A LAB MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HIGH SPEED SATURATED SWITCHING • ALSO AVAILABLE IN CERAMIC SURFACE MOUNT PACKAGE 2.54 (0.100) Nom. 3 1 2 TO–18 METAL PACKAGE Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C PD Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range TJ , TSTG Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 75V 40V 6V 800mA 0.5mW 2.28mW / °C 1.2W 6.85mW / °C –65 to +200°C Prelim. 3/96 SEME 2N2222A LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)CEO OFF CHARACTERISTICS Collector – Emitter Sustaining Voltage IC = 10mA IB = 0 40 V V(BR)CBO Collector – Base Breakdown Voltage IC = 10µA IE = 0 75 V V(BR)EBO Emitter – Base Breakdown Voltage IE = 10µA IC = 0 6 V ICEX Collector Cut-off Current VCE = 60V VEB(off) = 3V ICBO Collector – Base Cut-off Current IE = 0 IEBO Emitter Cut-off Current (IC = 0) IBL Base Current 10 nA VCB = 60V 0.01 TA = 150°C 10 µA IC = 0 VEB = 3V 10 nA VCE = 60V VEB(off) = 3V 20 nA IC = 150mA IB = 15mA 0.3 IC = 500mA IB = 50mA 1 IC = 150mA IB = 15mA IC = 500mA IC = 50mA IC = 0.1mA VCE = 10V 35 IC = 1mA VCE = 10V 50 IC = 10mA VCE = 10V 75 TA = –55°C 35 IC = 150mA VCE = 10V 1 100 IC = 150mA VCE = 1V 1 50 IC = 500mA VCE = 10V 1 40 ON CHARACTERISTICS VCE(sat)1 Collector – Emitter Saturation Voltage VBE(sat)1 Base – Emitter Saturation Voltage hFE DC Current Gain 0.6 1.2 2 V — 300 fT SMALL SIGNAL CHARACTERISTICS Transition Frequency 2 IC = 20mA VCE = 20V f = 100MHz Cob Output Capacitance VCB = 10V IE = 0 f = 100kHz 8 Cib Input Capacitance VEB = 0.5V IC = 0 f = 100kHz 25 hfe Small Signal Current Gain IC = 1mA VCE = 10V f = 1kHz 50 300 IC = 10mA VCE = 10V f = 1kHz 75 375 td SWITCHING CHARACTERISTICS Delay Time VCC = 30V VBE(off) = 0.5V 10 tr Rise Time IC = 150mA IB1 = 15mA 25 ts Storage Time VCC = 30V IC = 150mA 225 tf Fall Time IB1 = IB2 = 15mA V MHz 300 60 pF — ns ns NOTES: 1) Pulse test: tp ≤ 300µs , δ ≤ 2% 2) fT is defined as the frequency at which hFE extrapolates to unity. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 3/96