SEME 2N930CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 1 1.91 ± 0.10 (0.075 ± 0.004) • CECC SCREENING OPTIONS A 0.31 rad. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) A= 1.40 (0.055) max. 1.02 ± 0.10 (0.04 ± 0.004) APPLICATIONS: SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1 – Base PAD 2 – Emitter PAD 3 – Collector Hermetically sealed surface mount version of the popular 2N930 for high reliability applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 45V VCEO Collector – Emitter Voltage 45V VEBO Emitter – Base Voltage 5V IC Collector Current PD Total Device Dissipation 30mA @ TA =25°C Derate above 25°C PD Total Device Dissipation @ TC =25°C Derate above 25°C TSTG , TJ Semelab plc. Operating and Storage Temperature Range Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 500mW 2.85mW / °C 1.16W 12mW / °C –65 to +175°C Prelim. 7/95 SEME 2N930CSM LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. V(BR)CEO* Collector – Emitter Breakdown Voltage IC = 10mA IB = 0 45 V(BR)CBO Collector – Base Breakdown Voltage IC = 10µA IE = 0 80 V(BR)EBO Emitter – Base Breakdown Voltage IE = 10µA IC = 0 5 VCE = 5V IB = 0 2 VCB = 45V IE = 0 10 VCE = 45V VBE = 0 10 IC = 0 10 ICBO Collector – Base Cut-off Current IEBO Emitter – Base Cut-off Current VBE = 5V VCE(sat)* Collector – Emitter Saturation Voltage IC = 10mA VBE(sat)* Base – Emitter Saturation Voltage IB = 0.5mA hFE DC Current Gain fT Current Gain Bandwidth Product Cob Output Capacitance hib Input Impedance IE = 1mA hrb Voltage Feedback Ratio hob Output Admittance hfe Small Signal Current Gain VCE = 10V IC = 500µA VCE = 10V IC = 10mA* IC = 500µA VCE = 5V f = 30MHz IE = 0 Noise Figure nA nA 0.9 150 600 30 VCB = 5V V — MHz 8 pF 32 Ω VCB = 5V 600 x10-6 f = 1kHz 1 µmhos 600 — 3 dB f = 1MHz VCE = 5V 25 IC = 0 f = 1MHz VCE = 5V NF V 1 0.7 Unit 150 IC = 10µA RS = 10kΩ f = 10Hz to 15.7kHz * Pulse Test: tp ≤ 300µs, δ ≤ 2% Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 7/95