i, Line. <z3E,ml-L.onauctoi TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3773, 2N4348, 2N6259 Hometaxial-Base, High-Current Silicon N-P-N Transistors Features: • High dissipation capability 120 W I2N4348), 150 W (2N3773), 250 W (2N6269) Rugged High Voltage Devices for Applications in Industrial and Commercial Equipment • • These typei are hometaxial-b»se silicon n-p-n transition intended for a wide variety of high-voltage highcurrent applications. Typical applications for these transistors include power-switching circuits, audio amplifiers, series- and shunt-regulator driver and output stages, dc-to-dc converters, inverters, and solenoid (hammeO/relay driver service: These devices employ the popular JEDEC TO 3 package; they differ in maximum ratings for voltage, current, and power. 5 A specification for hFE, VfjE. & VCE<»«> (2N4348) 8-A specification for hFE, VBE. & VcE(Mt) (2N3773. 2N6259) 140 V min I2N4348). 160 V min (2N3773) 170 V min (2N6259) • Low saturation voltaga with high beta TERMINAL DESIGNATIONS MAXIMUM RATINGS. Absolute Minimum Values: •COLLECTOR-TO-BASE VOLTAGE COLLECTOR TO EMITTER VOLTAGE " With base open With reverse bias !VBE> ol -1.5 V "EMITTER TO-BASE VOLTAGE "COLLECTOR CURRENT' Continuous Peak "BASE CURRENT: Continuous . , . . . , ,....,,... Peak "TRANSISTOR DISSIPATION: At case temperatures up to 25°C At case temperatures above 25°C "TEMPERATURE RANGE: Storage & Operating (Junction) . . . . . . . . . . . . "PIN TEMPERATURE (During Soldering!: At distances > 1/3? in. (0,8 mm) from case for II VCEO VCEX 2N434B 140 2N3773 160 2N62S9 170 120 140 140 160 150 170 10 30 16 30 16 30 4 IS 4 IS IS 7 IB 4 FT 120 150 250 Orate ljn«Arly ta 200*0 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Qualify Semi-Conductors ELECTRICAL CHARACTERISTICS, At Case Temperature ( ! = 25°C Unless Otherwise Specified LIMITS TEST CONDITIONS CHARACTERISTIC SYMBOL VOLTAGE V dc VCE VBE SoHactor-Cutoff Current: With emitter open, VCB= 1 40 V With base emitter junction reverie biased 'CEX 'CEX With bate open 'CEO h FE Collector-to-Emitter Sustaining Voltage; Mm. 'B Max. M»x Min. 2 120 110 150 - ,5 - .5 - .5 1 120 140 150 b - .5 - .6 10 Mix. mfl - mA 0.2 10 mA 4 20 -^ 0 5 6» 8» 8» 10» 16» 15 10 2 5 7 mA mA 60 15 60 15 60 10 5 10 140 160 i ;o V 02» 140 .150 160 V 02» 120 140 150 V 1 5 O.I VCEX** U S ' Mm. ? - 100 170 4 4 2 4 4 2N6259 2N3773 - IEBO DC Forward Current Transfer Ratio 'C UNITS 2N434B •ceo With base-emitter junction reverse biased andTc = 150°C Emitter-Cutoff Current CURRENT A dc With base-emitter junction reverse- biased IR0E 10 OiJ) With external base-to-emntef resistance (RBE* " tOOii With base open Jase to Emitier Voltage Collector-To Emitter Saturation Voltage Vc£R(ftus) VCEOlsusl VflE 4 4 ? 4 &» 8» 10' 16» v CF < t i a '' 0 5» Ba 8" 10» 7 2 7 - 7 - 1 06 OR 1 75 j 2 1 4 1 4 25 ? Second- BieaV down Collector Current With base forward-biased and 1 -s nomepet'tive pulse 'S/h b Second Breakdown Eneigy With base reverse-biased and L = 40 mH, RBE - 100SI ES'hc Magnitude of Common EmillPr. Small-Signal, Short Cucun. Forward Currenl Transter Ratio If * 50kHz! |Hfe| Common-Emitter, Small Signal. Short-Circuit. Forward Current Transfer Ratio (f = 1 kHz) h ft Thermal Resistance junction-io-Case R,JC V A 15 SO 100 V 3 1 5 15 . 1.5 2.5 0 \K 0 \K 0 125 4 1 t t 4 4 l 40 40 40 1 46 117 .1 07 °C/W