TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
USA
1N5817 MBR115P
1N5818 MBR120P
1N5819 MBR130P
MBR140P
AXIAL LEAD RECTIFIERS
. . . employing the Schottky Barrier principle in a large area metal-toconsr"jction with oxide passivation and metal overlap contact.
SCHOTTKY BARRIER
RECTIFIERS
Ideally suited for use as rectifiers in low-voltage, high-frequency
inverters, free wheeling diodes, and polarity protection diodes.
1 AMPERE
15, 20, 30, 40 VOLTS
silicon power diode. State-of-the-art geometry features epitaxial
•
Extremely Low vf
•
•
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
•MAXIMUM RATINGS
.ft
si
Riling
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non-Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Forward Current (2)
IVR(eq U ,vl<0.2V R (dc>.
TL •= 90°C,
R 9JA • 80°C/W, P.C. Board
Mounting, see Note 2. TA * 55°C)
Ambient Temperature
(Rated VR(dc), PplAVI " 0.
R9JA-80°C/WI
Non-Repetitive Peak Surge Current
(Surge applied at rated load
conditions, half-wave, single phase
60 Hz, T L • ?0°C>
Operating and Storage Junction
Temperature Range
(Reverse Voltage applied)
Peak Operating Junction Tempereture
(Forward Current applied)
§•
Symbol
30
V RRM
V RWM
36
VRSM
VRIRMSI
10
14
90
85
80
°C
. 25 (for one cycle) •
'FSM
°C
T J(pkl
•THERMAL CHARACTERISTICS INote 21
Characteristic
Thermal Resistance, Junction to Ambient
Symbol
Max
Unit
RSJA
80
°c/w
MILLIRIETERS
DIM MIN
5.97
A
B
IM
U
0.76
K 27.94
•ELECTRICAL CHARACTERISTICS (T L - 25°C unless otherwise noted! (21
p*
oo
%
^
"~
Charicterntic
Symbol
Maximum Instantaneous Forward
VF
Forward Voltage (1)
lip -0.1 A)
0.320 0.330
0.450 0.950
lip • LOAl"^lip -3.0 A)
0.750 0.875
Maximum Instantaneous Reverse
'R
Current @ Rated dc Voltage (1)
1.0
(TL - 25°CI
1.0
(TL-100°C)
10
10
(1) Pulse Twt: Pulse Width - 300 lit. Duty Cycle - 2.0«.
(2) Lead Tomperature reference it cathode lead 1 /32" from case.
•Indicates JEDEC Registered Data for 1NS817-19.
o>
m
*"
I
I
I
i
MAX
660
3.05
O.B6
-
INCHES
MIN
MAX
0.235
0.110
0.030
1 100
0.260
0.120
0.034
-
EEC
oarno
sss
s
Unit
V
MECHANICAL CHARACTERISTICS
0.340 , 0.350
0.600. 0.550
0.900-' 0.850
0.350
0.600
0.900
CASE
FINISH
mA
1.0
10
1.0
10
1.0
10
Transfer molded plastic
All external surfaces
corrosion-resistant and the terminal
leads are readily solderable
POLARITY
Cathode indicated by
polarity band.
MOUNTING POSITIONS
Any
SOLDERING
,220°C 1/16" from
case for »n seconds
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
1N5817, 1N5818, 1N5819, MBR115P, MBR120P, MBR130P, MBR140P
NOTE 1 - DETERMINING MAXIMUM RATINGS
Reverie power dissipation end the ponibility of thermal
runaway mun be considered when operating this rectifier *t
reverse voltages above 0.1 VRWM- Proper derating may be accomplished by uie of equation (1).
slope in the vicinity of 115°C. The data of Figures 1, 2, and 3 is
basad upon dc conditions. For use in common rectifier circuits,
Table 1 indicates suggested factors for an equivalent dc voltage
to use for conservative design, that is:
TA(max) • Tjlmaxl ~ RflJAfplAVI - RejApR(AV)
I1'
where TAlmax) " Maximum allowable ambient temperature
Tj(max) * Maximum allowable junction temperature
(12S°C or the temperature at which thermal
runaway occurs, whichever is lowest)
PFIAV) ' Average forward power dissipation
PR (A VI • Average reverse power dissipation
RJJA • Junction-to-ambient thermal resistance
Figures 1, 2. and 3 permit easier use of equation (1) by taking
reverse power dissipation and thermal runaway into consideration.
The figures solve for a reference temperature as determined by
equation (2).
TR-Tj( m a x )-R 9 j A P R ( A V )
(2)
Substituting equation (2) into equation (1} yields:
VR(equiv)-Vin(PK) * F
(41
The factor P is derived by considering the properties of the various
rectifier circuits and the reverse characteristics of Schottky diodes.
EXAMPLE: Find TA(max) for 1N5818 operated in a 12-volt
dc supply using a bridge circuit with capacitive filter such that
IDC " 0-4 A (IFIAV) • °-5 A), IIFMI/IIAVI " 1". input voltage
•10V| rml) ,R,,j A -80 0 C/W.
Step 1. Find Vp|(,quiv| Read F • 0.65 from Table 1.
•'•VRiaquJ,)-(1.41)1101 (0.65) -9.2V.
Step 2. Find Tfj from Figure 2. Read TR - 109°C
<5> VR • 9.2 V and R8JA • 80°C/W.
Step 3. Find Pp( A y| from Figure 4. ""Read Pp( A V) -0.5W
®>{j~Jj-10andl F | A V I -0.5A.
Step 4. Find T A ( max ) from equation (31.
TA(max) " 109 - (80H0.5I - 69°C.
""Values given are for the 1N5818. Power is slightly lower for the
1N5817 because of its lower forward voltage, and higher for the
1N5819. Variations will be similar for the MBR-prefix devices,
using Pp(AV) from Figure 7.
TABLE 1 - VALUES FOR FACTOR F
TA(max) " TR - R(?J A PF(AV)
'31
Inspection of equations (2) and (3) reveals that TR is the
ambient temperature at which thermal runaway occurs or where
Tj - 125°C, when forward power is zero. The transition from one
boundary condition to the other is evident on the curves of
Figures 1, 2. and 3 as a difference in the rate of change of the
Full Wave,
Bridge
Circuit
Half Wave
Resistive Capacilivt*
Load
Sine Wave
Square Wave
O.S
1.3
1.S
0.75
Resistive
Capacitive
0.5
0.65
0.75
0.75
Full Wave,
Center Tapped* t
Resistive
Capacitive
1,0
1.5
1.3
1.5
•Note that VR(PK) « 2.0 Vj n (p K ). tUs« line to center tap voltage for V|n.
FIGURE 1 - MAXIMUM REFERENCE TEMPERATURE
FIGURE 2 - MAXIMUM REFERENCE TEMPERATURE
1N5817/MBR11EP/MBR120P
1N5818/MBR130P
125
3.0
M
5.0
7.0
75
W
4.0
VR, DC REVERSE VOLTAOE (VOLTS)
FIGURE 3 - MAXIMUM REFERENCE TEMMRATUR,
1N5819/MBR140F
6.0
7,0
10
16
20
30
VR, DC REVERSE VOLTAGE (VOLTS)
FIGURE 4 - STEADV-STATE THERMAL RESISTANCE
90
-IOTH LEADS T DHEAT INK
EQUAL 1 ENGTM
10
70
^
_^ ^
*^ ^
80
MAX MUM
50
^
S*"^
•^"TY •ICAL
^f ^
^
***~
^
40
30
w
^^
•"^. ^
U
4.0
S.O
7.0
10
16
20
VR, DC REVERSE VOLTAGE (VOLTS)
*
I/I
1/4
3/1
I/J
I/I
L, LEAD LEK9TM (INCHED
3/4
7/1
1.