s., Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6261 MECHANICAL DATA Dimensions in mm(inches) HOMETAXIAL-BASE MEDIUM POWER SILICON NPN TRANSISTOR 6.35 (0.250) 8.64 (0.340) FEATURES •f T =800kHzat0.2A ft ss i O *— r- sa ass • Maximum Safe-area of operation curves for dc and pulse operation. •VCEV(8U8)a90Vmln • Low Saturation Voltage: VCE(sat • 1.0V at *C - 0.5A) .1.27(0.050) "LSI (0.750) 9.14 (0.360) min. TO-66 PIN 1 — Base PIN 2 — Emitter Case is Collector. APPLICATIONS • Power Switching Circuits • Series and shunt-regulator driver and output stages • High-fidelityampllfers • Solenoid Drivers ABSOLUTE MAXIMUM RATINGS (T^ = 25°C unless otherwise stated) VCBO VCEO 90V Collector -Base Voltage Collector- Emitter Voltage (with base open) 80V VCER(sus) External Base - Emitter (RBE) = 100Q) 85V VCEV(sus) Collector- Emitter Voltage (with base reverse biased) 90V VEBO Emitter to Base Voltage TV Ic Continuous Collector Current 4A IB PD total Power Dissipation at T^gg = 25°C Continuous Base Current 2A SOW Derate above 25°C Tj,Tstg. 0.200-C Operating and Storage Junction Temperature Range -65 to 200°C In accordance with JEDEC registration data format THERMAL CHARACTERISTICS [R9JC Thermal Resistance, Junction to Case I 3.5°C/W NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information rumished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discoveVed in its use. NI Semi-Conductors encourages customers to verify that datasheets are current before placing orders. 2N6261 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Test Conditions Parameter Collector Cut-off Current 'CEO IpPW V*C v 'EBO with base open Collector- Cut-off Current Emitter Cut-off Current Collector- Emitter Sustaining VCEO(sus) Voltage with base open* hpp PC Resistance D.C Forward Current* Collector to Emitter Saturation VCE(sat) VBE Voltage* Base - Emitter Voltage Typ. Max. Unit VCE = 60V IB = 0 0.5 V\->C CE = 80V VD^ BE = -1.5V 0.5 T C =150°C 1.0 VBE = -7V IB = 0 0.2 IC = 0.1A IB = 0 mA 80 V External Base to Emitter VCER(sus) Min. VBE = 5V (RBE)=100ii VCE v_»c = 2V IC = 4A 5 VCE = 2V I C =1.5A 25 IC = 1.5A I B =.0.15A V_r 85 100 ~~ 0.5 V VCE = 2V lc = 1.5 VCE = 4V lc = 0.1 1.5 Common Emitter Small Signal Short Circuit, Forward Current fhfe Transfer Ratio Cut off Frequency *Pulse test tp =300us 5 < 1.8% 0.03 MHz