7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N7372 - PNP 2N7373 - NPN APPLICATIONS: • • • Power Supply Inverters and Converters General Purpose Amplifiers Complimentary Power Transistors in Hermetic Isolated TO-254AA Packages JAN/TX/TXV/JANS FEATURES: • Planar Process for Reliability • Fast Switching • High-Frequency Power Transistors • For Complementary Use with Each Other • 15 mj Reverse Energy Rating with IC = 10MA and 4 V Reverse Bias • Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Package • Leads can be Formed All Terminals Isolated from the Case • DESCRIPTION: These power transistors are produced by PPC's MULTIPLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. These devices have excellent unclamped and clamped reverse energy ratings with the base to emitter reversed biased. Ultrasonically bonded wire leads and gold eutectic die bonding are utilized to permit operating temperature to 200° C. The hermetically sealed package insures maximum reliability and long life. The isolated low profile package allows for easy PC board fit. TO-254AA ABSOLUTE MAXIMUM RATINGS: SYMBOL CHARACTERISTIC 2N7372 2N7373 UNITS - 100 100 V VCBO VCEO Collector-Emitter Voltage - 80 80 V VEBO Emitter-Base Voltage - 5.5 5.5 V Collector-Base Voltage IC IC Continuous Collector Current 5 5 A Peak Collector Current 10 10 A IB Continuous Base Current 2 T STG TJ θ JC A -65 to 200 °C Operating Junction Temperature -65 to 200 °C 300 15 °C Lead Temperature 1/16" from cast for 10 sec. Unclamped Inductive Load Energy PT 2 Storage Temperature mj Continuous Device Dissipation TC = 25° C 58 58 TC = 100° C 33 33 W 3 3 ° C/W Thermal Resistance Junction to Case MSC1343.PDF 010-29-99 W 2N7372 - PNP 2N7373 - NPN ELECTRICAL CHARACTERISTICS: (25° Case Temperature Unless Otherwise Noted) SYMBOL CHARACTERISTIC VCEO Collector-Emitter Breakdown Voltage Collector Cutoff Current, Base Open ICEO TEST CONDITIONS VALUE Min. Max. Units IC = 100 mA, IB = 0 80 ---- V IB = 0, VCE = 40 V ---- 50 µA 1 1 mA µA ICES Collector Cutoff Current, Emitter-Base Short VCE = 100 V VCE = 60 V ------- ICEX Collector Cutoff Current VBE = 60 V, VBE = 2 V, TC = 150° C ---- 500 µA IEBO Emitter Cutoff VEB = 5.5 V, IC =0 ---- 1 mA Current VEB = 4.0 V, IC =0 ---- 1 µA Static Forward Current Transfer Ratio IC = 5.0 A, VCE = 5.0 V 40 ---- ---- IC = 2.5 A, VCE = 5.0 V IC = 50 mA, VCE = 5.0 V 70 25 50 200 ------- ---------- Base-Emitter Volatage IC = 2.5 A, VCE = 5.0 V ---- 1.45 V VBE(sat) Base-Emitter Saturation Voltage IC = 2.5 A, IB = 0.25 A ---- 1.45 V IC = 5.0 A, IB = 0.5 A VCE(sat) 2.2 1.5 0.75 V Collector-Emitter Saturation Voltage V ---- HFE IC = 2.5 A, VCE = 5.0 V, TC = -55° C VBE IC = 2.5 A, IB = 0.25 A ---------- VCE = 5.0 V, IC = 100 mA, F = 1.0 KHz 50 ---- ---- VCE = 5.0 V, IC = 0.5A, F = 10 MHz 7.0 ---- ---- VCB = 10 V, IE = 0A, F = 0.1 MHz ---- 250 pF ton Small Signal CommonEmitter Forward Current Transfer Ratio Small Signal Common Emitter Forward Current Transfer Ratio Open-Circuit Output Capacitance Turn-on Time IC = 5.0 A, IB1 = IB2 = 0.5 A ---- 0.5 µs toff Turn-off Time VBE (OFF) = 3.7V ---- 1.5 µs HFE Ihfel COBO MSC1343.PDF 010-29-99 IC = 5.0 A, IB = 0.5 A 2N7372 - PNP 2N7373 - NPN PACKAGE MECHANICAL DATA: JEDEC Hermetic Metal TO-254AA 3-Pin MSC1343.PDF 010-29-99