isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6259 DESCRIPTION ·DC Current Gain: hFE= 15-60@IC= 8A ·High Power Dissipation : PD= 150W@ IC= 15A APPLICATIONS ·Designed for high power audio, disk head positioners, linear amplifiers, switching regulators,solenoid drivers,and DC-DC converters or inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 170 V VCEO Collector-Emitter Voltage 150 V VCEX Collector-Emitter Voltage 170 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 16 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 4 A IBM Base Current- Peak 15 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ MAX UNIT 1.17 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6259 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A; IB= 3.2A 2.5 V VBE(on) Base-Emitter On Voltage IC= 8A ; VCE= 2V 2.0 V ICEO Collector Cutoff Current VCE= 130V; IB= 0 10 mA ICEX Collector Cutoff Current VCE= 150V; VBE(off)= 1.5V 2.0 mA ICBO Collector Cutoff Current VCB= 150V; IE= 0 2.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 5.0 mA hFE-1 DC Current Gain IC= 8A ; VCE= 2V 15 hFE-2 DC Current Gain IC= 16A ; VCE= 4V 10 isc Website：www.iscsemi.cn CONDITIONS 2 MIN MAX 150 UNIT V 60