MJ10041 MJ10044 MJ10047

tSstni-Conauctoi Lpi
, L/nc.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MJ10041
MJ10044
MJ10047
26,50, and 100 AMPERE
-
NPN SILICON
POWER DARLINGTON
TRANSISTOR
25 kVA ENERGY MANAGEMENT SERIES
SWITCHMODE DARLINGTON TRANSISTORS
25, 50 and 100 Ampere Operating Current
250, 450 and 850 VOLTS
250 WATTS
These Darlington transistors are designed for Industrial service
under practical operating environments requiring fast switching
speed for highly efficient systems operating at high frequency
such as inverters, PWM controllers and other high frequency systems operating from 120, 230 and 460 V lines.
Designer's Data tor
"Wont-Cue" Conditions
The Designer's Data Sheet permits the design
of most circuits entirely from the Information
presented. Limit data — representing device
characteristic* boundaries — are given to facilitate "worst-case" design.
COLLECTOR
SrvLEI:
PIN I. BASE
2. EMITTER
3. COLlECtOR
4. COLLECTOR
'Emitter-Collector Diode Is a fast recovery high power diode.
Note: The 8 ohm resistor f not included In the MJ10044 and MJ10047.
MAXIMUM RATINGS
Mechanical Ratings
Ratinfi
Value
Unit
Mounting Torque (To heat sink with 6-32 Screw)
(Note 1)
8.0
In.-lb
Lead Torque (Lead to bus with 5 mm Screw)
(Note 2)
20
in.-lb
Per Unit Weight
41
grams
0.5
•C/W
NOTES:
1. DIMEN5IONSAANOBABEOATUMSANO
T IS BOTH A DATUM SURFACE AND
SEATING PLANE.
2. POSITIONAL TOLERANCE FOR MOUNTING
HOLES!
_
3. DIMENSIONING ANO TOLEBANCING PER
ANSI Y14.5. 1982.
4. CONTROLLING DIMENSION: INCH
EXCEPT FOR METRICALLY THREADED
INSERTS.
MILLIMETERS
MAX
JOJ1
INCHES
MIN MAX
THERMAL CHARACTERISTICS
[ Thermal Resistance. Junction to Case, R
Mica Insulators available as aepsrate items.
0.003- thick. Molo.ola Part Number HCSB123B7B003.
Notes:
1. A Belleville wnhtr of 0,28V O.D,, 0.138" I.D., 0.013' thick and 43 pounds flat
Is recommended.
2. Th« maximum penetration o( the screw should ba limited to 0.50*.
3. To sdapt the collector and amlttsr tsrrninals to quick connect terminals, AMP
2EO Series Faslon tsb P/N 6149B-1 il luggeited.
4. The mounting holes of this package are compatible with TO-204 (formerly
TO-3) mounting holes.
130.
JUL OJ2L OJ1L
-iSL
.
t
i
CASE 353-01
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
MJ1Q04t; MJ10044, MJ10047
MAXIMUM RATINGS (Continued) ITC - 26'C unless otherwise noted.)
Rating
Collector-Emitter Voltage (IB - 0)
Collector-Emitter Voltage (RBE • 1* Ohms)
Collector-Base Voltage
Emitter-Bale Voltage
Collector Current — Operating
fTc - 115°C)
Symbol
MJ10041
MJ10044
MJ10047
Unit
VCEO
VCEH
VCB
VEB
850
460
250
Vdc
900
600
300
900
600
300
Vdo
Vdc
'c(op)
25
8.0
Vdc
A
(Tc = 85'C)
(Tc = 8S'C)
60
100"
Collector Current — Continuous
— Peak Repetitive
— Peak Nonrepetitlve
fe
Base Current — Continuous
— Peak Nonrepetitive
IB
26
SO
A
Total Device Dissipation
Derate above TC = 26'C
For 1-mlnute overload
PD
250
2.0
333
Watts
-55 to +150
-65 to 200
•c
Operating Junction and Storage Temperature Range
For 1-mlnute overload
37.6
76
126
Tj, Tstg
75
ISO
250
100
300
600
A
vwc
Watts
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.)
Characteristic
Symbol
Mln
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
«C = 126 mAdc)
Vdc
VCEO(sua)
MJ 10041
MJ 10044
MJ 10047
850
450
250
ICEV
Collector Cutoff Current
(VCE - mud VCB. VBE(off) - 1.5 Vdc)
-
(VcE - Rated VCB. VflEloffl = t-B Vdc, TC - 160'C|
ICER
Collector Cutoff Current
{VCE - Rated VCER, RBE = 10 n. TC = loo-C)
Emitter Cutoff Current
(VEB - 4.0 Vdc. IC - 0)
mA
2.0
10
—
10
-
500
2.6
IEBO
MJ10041
MJ10D44
MJ10047
mA
mA
SAFE OPERATING AREA
Second Breekdown Collector Current with Base Forward-Biased
FBSOA
See Figures 32, 34 & 36
Clamped Inductive SOA with Base Reverse-Biased
RBSOA
See Figures 33, 35 & 37
Overload Safe Operating Area
OLSOA
See Figures 38, 39, 40, 41, 42 Si 43
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = o, f|est - 1.0 kHz)
C0b
—
2000
(1) Pulse Tetl, Pulie width of 300 ^, duty cycle < 2.0%,
•This rating is wtlh a 60% duty cycle, and Is limited by power dissipation. Higher operating currents am «IFowibl« it lowtr duty cyclai.
PF
MJ10041, MJ10044. MJ10047
ELECTRICAL CHARACTERISTICS (Continued) ITC - 26"C unless otherwise noted.)
Characteristic
Symbol
Mln
Max
Unit
ON CHARACTERISTICS (1)
MJ10Q41
DC Current Gain
"FE
«C - 26 Adc, VCE = 5.0 Vdc)
dC - 2 5 Adc, VCE - 10 Vdc)
Collector-Emitter Saturation Voltage
He - as Adc, IB - 2.0 Adc)
HC = 37.5 Adc, IB = 7.BAdc)
dc » 26 Adc, IB - 2.0 Adc, TC - 100°C)
VCE(sat)
Base Emitter Saturation Voltage
VBE(sat)
dc • 26 Adc. IB = 2.0 Adc)
25
40
•
Vdc
-
2.0
5.0
2.5
-
3.0
3.0
50
60
-
-
2.0
3.3
2.5
-
3.0
3.0
76
90
-
-
2.0
2.5
I
3.6
3.S
Vdc
dC - 26 Adc, IB - 2.0 Adc, TC - 100°C)
MJ10044
DC Current Gain
llC=60Adc,V C E = 5.0Vdcl
"F6
dC - 60 Adc, VCE - 10 Vdc)
Collector-Emitter Saturation Voltage
Vdc
vCE(sat)
dC = 50 Adc, IB = 1.67 Adc)
dc » 76 Adc, IB - 6.0 Adc)
dc - 60 Adc, IB = 1.67 Adc, Tc = 100°C)
Base-Emitter Saturation Voltage
Vdc
VBE(sat)
dc - 50 Adc, IB = 1.67 Adc)
»C - 50 Adc, IB - 1.67 Adc, TC = 100'CI
MJ10047
DC Current Gain
hFE
dc = 100 Adc, VCE - 6.0 Vdc)
dc - 100 Adc, VCE - 1° vdc)
Collector-Emitter Saturation Voltage
dc - 100 Adc. IB - 2.76 Adc)
dC - 100 Adc, IB = 2.75 Adc, TC = 100°C)
VcElsat)
Base-Emitter Saturation Voltage
VBE(sat)
dC - 100 Adc, IB - 2.76 Adc)
(1C - 100 Adc, IB - 2.75 Adc, TC = 100'C)
(II Puha Teal: fults width of 300 in. duty cycle < 20%.
Vdc
Vde
ELECTRICAL CHARACTERISTICS (Continued) (TC - 25'C unless otherwise noted.)
Symbol
Characteristic
Mln
TYP
Max
Unit
0.03
0.25
ia
1.2
3.3
5.0
1.6
5.0
SWITCHING CHARACTERISTICS
MJ10M1
Resistive Load
Delay Time
Rise Time
Storage Time
ivcc - soo vdc, IG - 25 A, iB, - 2.5 A,
VBEIOFFI = 6.0 v, tp = so ps,
Duty Cycle a 2.0%)
td
lr
ts
tf
Fall Time
—
—
—
—
10
Inductive Load, Clamped
Storage Time
(ICM = 25A,
Crossover Time
VCEM = MO v.
Storage Time
VflEIOFF) = 5.0 V.
IB1 -2.SA)
Crossover Time
Tj - 100"C
S.O
16
3.0
10
'sv
—
—
—
33
10
tc
-
1.5
E.O
<sv
tc
Tj - 25'C
if