POINN TIPL791

TIPL791, TIPL791A
NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
MAY 1989 - REVISED MARCH 1997
●
Rugged Triple-Diffused Planar Construction
●
4 A Continuous Collector Current
●
Operating Characteristics Fully Guaranteed
at 100°C
B
1
1000 Volt Blocking Capability
C
2
E
3
●
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (V BE = 0)
Collector-emitter voltage (IB = 0)
SYMBOL
TIPL791
TIPL791A
TIPL791
TIPL791A
TIPL791
TIPL791A
Emitter-base voltage
Continuous collector current
VCBO
VCES
VCEO
VALUE
850
1000
850
1000
400
450
UNIT
V
V
V
V EBO
10
V
IC
4
A
Peak collector current (see Note 1)
ICM
8
A
Continuous device dissipation at (or below) 25°C case temperature
Ptot
75
W
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
Operating junction temperature range
Storage temperature range
NOTE
1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIPL791, TIPL791A
NPN SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V CEO(sus)
ICES
ICEO
IEBO
hFE
VCE(sat)
V BE(sat)
ft
Cob
TEST CONDITIONS
Collector-emitter
sustaining voltage
IC = 100 mA
L = 25 mH
MIN
(see Note 2)
TIPL791
400
TIPL791A
450
TYP
MAX
V
VCE = 850 V
VBE = 0
TIPL791
Collector-emitter
V CE = 1000 V
VBE = 0
TIPL791A
cut-off current
V CE = 850 V
VBE = 0
TC = 100°C
TIPL791
200
TC = 100°C
TIPL791A
200
5
5
V CE = 1000 V
VBE = 0
Collector cut-off
VCE = 400 V
IB = 0
TIPL791
5
current
V CE = 450 V
IB = 0
TIPL791A
5
VEB =
10 V
IC = 0
VCE =
5V
Emitter cut-off
current
Forward current
transfer ratio
1
IC = 0.5 A
IB =
0.2 A
IC =
Collector-emitter
IB =
0.5 A
IC = 2.5 A
saturation voltage
IB =
1A
IC =
4A
IB =
1A
IC =
4A
IB =
0.2 A
IC =
1A
Base-emitter
IB =
0.5 A
IC = 2.5 A
saturation voltage
IB =
1A
IC =
4A
IB =
1A
IC =
4A
Current gain
bandwidth product
Output capacitance
(see Notes 3 and 4)
UNIT
20
µA
µA
mA
60
0.5
1A
(see Notes 3 and 4)
1.0
2.5
TC = 100°C
V
5.0
1.0
(see Notes 3 and 4)
1.2
1.4
TC = 100°C
VCE =
10 V
IC = 0.5 A
f=
VCB =
20 V
IE = 0
f = 0.1 MHz
V
1.3
1 MHz
12
MHz
110
pF
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJC
MIN
TYP
Junction to case thermal resistance
MAX
UNIT
1.66
°C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
†
†
MIN
TYP
MAX
UNIT
2
µs
200
ns
tsv
Voltage storage time
trv
Voltage rise time
tfi
Current fall time
tti
Current tail time
txo
Cross over time
200
ns
tsv
Voltage storage time
2.5
µs
trv
Voltage rise time
400
ns
tfi
Current fall time
tti
Current tail time
txo
Cross over time
IC = 4 A
V BE(off) = -5 V
IB(on) = 0.8A
IC = 4 A
IB(on) = 0.8A
V BE(off) = -5 V
TC = 100°C
(see Figures 1 and 2)
(see Figures 1 and 2)
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
2
TEST CONDITIONS
INFORMATION
100
ns
50
ns
200
ns
50
ns
600
ns
TIPL791, TIPL791A
NPN SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
PARAMETER MEASUREMENT INFORMATION
33 Ω
+5V
D45H11
BY205-400
33 Ω
BY205-400
RB
(on)
1 pF
V Gen
180 µ H
2N2222
1 kΩ
68 Ω
0.02 µ F
vcc
BY205-400
Vclamp = 400 V
TUT
1 kΩ
+5V
270 Ω
BY205-400
5X BY205-400
1 kΩ
2N2904
Adjust pw to obtain IC
D44H11
47 Ω
For IC < 6 A
VCC = 50 V
For IC ≥ 6 A
VCC = 100 V
V
100 Ω
BE(off)
Figure 1. Inductive-Load Switching Test Circuit
I B(on)
A (90%)
IB
A - B = tsv
Base Current
B - C = trv
D - E = tfi
E - F = tti
C
B - E = txo
V
CE
B
90%
10%
Collector Voltage
D (90%)
E (10%)
I
C(on)
Collector Current
F (2%)
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF.
B. Resistors must be noninductive types.
Figure 2. Inductive-Load Switching Waveforms
PRODUCT
INFORMATION
3
TIPL791, TIPL791A
NPN SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCP791AA
100
TC = 125°C
TC = 25°C
TC = -65°C
VCE = 5 V
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
10
1·0
0·1
TCP791AB
5
TC = 25°C
IC = 1 A
IC = 2 A
IC = 3 A
IC = 4 A
4
3
2
1
0
1·0
10
0
0·5
IC - Collector Current - A
1·0
IB - Base Current - A
Figure 3.
Figure 4.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
10
0.1
0·01
1·0
TIPL791
TIPL791A
10
100
VCE - Collector-Emitter Voltage - V
Figure 5.
4
SAP791AA
1·0
tp = 100 µs
tp =
1 ms
tp = 10 ms
DC Operation
PRODUCT
1·5
INFORMATION
1000
2·0
2·5
TIPL791, TIPL791A
NPN SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
THERMAL INFORMATION
Zθ JC/Rθ JC - Normalised Transient Thermal Impedance
THERMAL RESPONSE JUNCTION TO CASE
vs
POWER PULSE DURATION
TCP791AC
1·0
50%
20%
10%
0·1
5%
0%
duty cycle = t1/t2
Read time at end of t1,
TJ(max) - TC = P D(peak) ·
0·01
10-5
10-4
10 -3
t1
t2
( )
10 -2
ZθJC
Rθ JC
· RθJC(max)
10-1
10 0
t1 - Power Pulse Duration - s
Figure 6.
PRODUCT
INFORMATION
5
TIPL791, TIPL791A
NPN SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
10,4
10,0
3,96
3,71
1,32
1,23
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
1,70
1,07
0,97
0,61
1
2
14,1
12,7
3
2,74
2,34
5,28
4,88
VERSION 1
0,64
0,41
2,90
2,40
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
PRODUCT
6
INFORMATION
MDXXBE
TIPL791, TIPL791A
NPN SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT
INFORMATION
7