TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1200 Volt Blocking Capability C 2 ● 75 W at 25°C Case Temperature E 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) SYMBOL TIPL760B TIPL760C TIPL760B TIPL760C TIPL760B TIPL760C Emitter-base voltage Continuous collector current VCBO VCES VCEO VALUE 1100 1200 1100 1200 500 550 UNIT V V V V EBO 10 V IC 4 A Peak collector current (see Note 1) ICM 8 A Continuous device dissipation at (or below) 25°C case temperature Ptot 75 W Tj -65 to +150 °C Tstg -65 to +150 °C Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS MAY 1989 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V CEO(sus) ICES ICEO IEBO hFE VCE(sat) V BE(sat) ft Cob TEST CONDITIONS Collector-emitter sustaining voltage IC = 10 mA L = 25 mH MIN (see Note 2) TIPL760B 500 TIPL760C 550 TYP MAX V VCE = 1100 V VBE = 0 TIPL760B Collector-emitter V CE = 1200 V VBE = 0 TIPL760C 50 cut-off current V CE = 1100 V VBE = 0 TC = 100°C TIPL760B 200 TC = 100°C 50 V CE = 1200 V VBE = 0 TIPL760C 200 Collector cut-off VCE = 500 V IB = 0 TIPL760B 50 current V CE = 550 V IB = 0 TIPL760C 50 VEB = 10 V IC = 0 VCE = 5V Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance 1 IC = 0.5 A (see Notes 3 and 4) UNIT 20 µA µA mA 60 IB = 0.4 A IC = 2A IB = 0.6 A IC = 3A (see Notes 3 and 4) 1.0 2.5 IB = 0.6 A IC = 3A TC = 100°C 5.0 IB = 0.4 A IC = 2A IB = 0.6 A IC = 3A (see Notes 3 and 4) 1.4 IB = 0.6 A IC = 3A TC = 100°C 1.3 VCE = 10 V IC = 0.5 A f= VCB = 20 V IE = 0 f = 0.1 MHz V 1.2 1 MHz V 12 MHz 110 pF NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC MIN TYP Junction to case thermal resistance MAX UNIT 1.56 °C/W inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER † † MAX UNIT tsv Voltage storage time 2.5 µs trv Voltage rise time 300 ns tfi Current fall time tti Current tail time txo Cross over time tsv Voltage storage time trv Voltage rise time tfi Current fall time tti Current tail time txo Cross over time IC = 3 A V BE(off) = -5 V IB(on) = 0.6 A IC = 3 A IB(on) = 0.6 A V BE(off) = -5 V TC = 100°C MIN (see Figures 1 and 2) (see Figures 1 and 2) Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2 TEST CONDITIONS INFORMATION TYP 250 ns 150 ns 400 ns 3 µs 500 ns 250 ns 150 ns 750 ns TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS MAY 1989 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION 33 Ω +5V D45H11 BY205-400 33 Ω BY205-400 RB (on) 1 pF V Gen 180 µ H 2N2222 1 kΩ 68 Ω 0.02 µ F vcc BY205-400 Vclamp = 400 V TUT 1 kΩ +5V 270 Ω BY205-400 5X BY205-400 1 kΩ 2N2904 Adjust pw to obtain IC D44H11 47 Ω For IC < 6 A VCC = 50 V For IC ≥ 6 A VCC = 100 V V 100 Ω BE(off) Figure 1. Inductive-Load Switching Test Circuit I B(on) A (90%) IB A - B = tsv Base Current B - C = trv D - E = tfi E - F = tti C B - E = txo V CE B 90% 10% Collector Voltage D (90%) E (10%) I C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF. B. Resistors must be noninductive types. Figure 2. Inductive-Load Switching Waveforms PRODUCT INFORMATION 3 TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS MAY 1989 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCP741AA 100 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT TC = 125°C TC = 25°C TC = -65°C VCE = 5 V 10 1·0 0·1 TCP741AB 5·0 TC = 25°C TC = 100°C 4·0 IC = 4 A IC = 3 A IC = 2 A IC = 1 A 3·0 2·0 1·0 0 1·0 10 0 0·5 IC - Collector Current - A 1·0 Figure 4. BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE TCP741AC 1·25 TCP741AO 10 TC = 25°C ICES - Collector Cut-off Current - µA VBE(sat) - Base-Emitter Saturation Voltage - V 2·0 IB - Base Current - A Figure 3. 1·15 1·05 0·95 IC = 4 A IC = 3 A IC = 2 A IC = 1 A 0·85 0·75 0 0·2 0·4 0·6 0·8 1·0 1·2 1·4 IB - Base Current - A Figure 5. PRODUCT 4 1·5 INFORMATION 1·6 1·0 TIPL760C VCE = 1200 V 0·1 TIPL760B VCE = 1100 V 0·01 0·001 -60 -30 0 30 60 TC - Case Temperature - °C Figure 6. 90 120 TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS MAY 1989 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA SAP741AF IC - Collector Current - A 10 1·0 0.1 10 µs tp = tp = 100 µs tp = 1 ms tp = 10 ms DC Operation 0·01 1·0 TIPL760B TIPL760C 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 7. THERMAL INFORMATION Zθ JC/Rθ JC - Normalised Transient Thermal Impedance THERMAL RESPONSE JUNCTION TO CASE vs POWER PULSE DURATION TCP741AM 1·0 50% 20% 10% 0·1 5% 0% duty cycle = t1/t2 Read time at end of t1, TJ(max) - TC = P D(peak) · 0·01 10-5 10-4 10 -3 t1 t2 ( ) 10 -2 ZθJC Rθ JC · RθJC(max) 10-1 10 0 t1 - Power Pulse Duration - s Figure 8. PRODUCT INFORMATION 5 TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS MAY 1989 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. PRODUCT 6 INFORMATION MDXXBE TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS MAY 1989 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT INFORMATION 7