, Dnc. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MPS-U07 NPN SILICON AMPLIFIER TRANSISTOR NPN SILICON ANNULAR AMPLIFIER TRANSISTOR . . . designed for general-purpose, high-voltage amplifier and driver applications. //n\ High Collector-Emitter Breakdown Voltage — = • 1-OmAdc High Power Dissipation - Prj = 10 W @ T C = 25°C Complement to PNP MPS-U57 H- .— A — ^ — B— Q [ C E B C L K MAXIMUM RATINGS Rating Collector-Emitter Voltage D— Symbol VCEO Collector-Base Voltage Emitter-Base Voltage Jok 100 VEB STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Collector Current — Continuous Total Power Disiipaton @ T A - 25°C Derate above 25°C Total Power Disiipaton @ Tc - 25°C Derate above 25°C Watt 1.0 8.0 mW/°C 10 80 Watts mW/°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characurittk Symbol 12.5 Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient -JU. -4— N R«JA °C/W °C/W DIM A B C D F G H 1 K I N Q R MILLIMETERS MIM MAX 9.14 9.53 6.6G 7.24 5.41 5.66 0.38 0.53 3.18 3.33 2.' 4 B S C 3.94 4.19 0.36 0.41 12.07 12.70 25.02 25.53 5.118 3SC 2.39 .14 2.69 1.40 INCHES MIN MAX 0,360 0.260 0.213 0.015 0,125 0.375 0.285 0.223 0.021 0.131 0.10 BSC 0.155 0.165 0.014 0.016 0.475 0.500 0.985 1.005 0.200 BSC 0.094 0.106 0,045 0.055 1 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Oiinlifv c^emi-C-on.au.ctoi LPioaucti., One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (201) 376-2922 (212)227-6005 FAX: (201) 376-8960 MPS-U07 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Typ Mix Unit Off CHARACTERISTICS Collector-Emitter Breakdown Voltage ^' (IC" I.OmAdc, IB *0) BVCEO 100 — — Vdc Emitter-Base Breakdown Voltage (IE - lOOuAdc. l c - 0 ) BVEBO 4.0 - - Vdc ICBO - - 100 nAdc 60 30 - 110 65 33 - - 0.18 0.1 0.4 - VflElon) - 0.76 1.2 Vdc fr 50 150 - MHz Cob — 6.0 12 pF Collector Cutoff Current (VCB •= so vdc, IE -0) ON CHARACTERISTICS DC Current Gain 1 1 ) (lc - 50 mAdc. VCE • 1 °vdc) IIC - 250 mAdc. VCE - '•<> Vdc> (IC • 500 mAdc. VCE • 1 .0 Vdc) Collector-Emitter Saturation Voltage Itl (1C * 250 mAdc, IB * 10 mAdc) (IC-25OmAdc, IB = 25 mAdc) Vdc VCE (sat) Base-Emitter On Voltage HI (IC - 250 mAdc. VCE " 5-0 Vdcl SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (11 (1C " 250 mAdc, VCE -5.0 Vdc, f = 100 MHz) Output Capacitance (VCB - 10 vdc, IE - o, f - 100 kHz) T.Jt _ hFE Pulia Width 5300 Ml, Duty Cycle £2.0% FIGURE 2 - "ON" VOLTAGES FIGURE 1 - DC CURRENT GAIN 200 1 VCE j .00-; Tj -7S»C dt -10V —~ l:^ -— s ": s "-- ^ s s \0 7.0 u TO 20 50 70 100 200 S« * 50 ! "\ s s ,' / \ ss A \ VCE - s o vdc Tj * 25°C \. COLLeCTOft-EMITTEfl VOLTAGE (VOLTS) L \0 s ppl.rtl.-ToBVcEO IT. CURRENT GAIN-BANOWICTH PRODUCT (MHj und BrMkdown L<mittd ES Mi B MlingWuiLimiMd ^: T «m*t Lifflrt*t»M* TC * S»C- +*** yS' in s i 2 £S 1C. COLLECTOR CtlRREI 111 --, " Z— — 200 300 SOD FIGURE 4 - CURRENT-GAIN-BANDWIDTH PRODUCT FIGURE 3 - DC SAFE OPERATING AREA S.O I" 100 IC.CQUECTORCUflRENTtmA) 1C, COLLECTOR CURRENT (nvA) 0 7.0 1C. COLLECTOR CURRENT <mA) There are two limitations on the power handling ability of a transistor: junction temperature and second breakdown. Safe operating area curves indicate lc - VCE lm'H of *"• transistor that must be observed for reliable operation; i.e., the trantinor must not be subjected to greater dissipation than the curves indicate. Quality Semi-Conductors The data of Figure 3 is based on Tj(pk) - 150°C; TC a variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 20 50 70 100 200