<y\s. LPioaucti, Dna. tJ TELEPHONE: (973) 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 2N2573 thru 2N2579 (SILICON) ro-3 For units with plnj (TO-3 Modified) specify devices MCR649AP-K2N2573) thru MCR649AP-7(2N2579). MAXIMUM RATINGS (T, = I2J'C unless oihtfwiw noted) Rating Symbol peak Reverse Blocking Voltage* 2N2573 2N2S74 2N2575 2N2576 2N2S77 2N2S7* 2N2S79 Forward Current RMS (»11 conduction angles) VKSM(rep)* 'T(KMS) Value Unit Volts 25 30 100 200 300 400 $00 25 Amp Circuit Fusing Consideration* (Tj * -65° to *12a°C, t S 8.3 ma) lzt Ptak Surgt Currant (On* Cycle, 90 Hi, Tj « -65 to + 125°C) ITSM Peak Gate Power - Forward PGM 5.0 Watts P G(AV) 0.5 Watt 2.0 Amp .£ VoiU Average Gate Power - Forward Peak Gate Current - Forward Peak Gate Voltage - Forward Reverse Opt rating Junction Temperature Range Storage Temperature Range Az« 275 >UM VGFM V GHM Tj T«« Amp 260 s.o -65 to -1-125 °c -65 to *150 °c NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility tor any errors or omissions discovered in its use. N I Semi-Conductors encourages customers to verify that datasheets are current More placing orders. ELECTRICAL CHARACTERISTICS (TC-ZSl»Cunleaotherwtaenot.d| SjmbU ChMKtwMfc Peak Forward Blocking Voltage* (Tj • 125°C) 2N2573 2N2574 2N2379 2N2576 2N2S77 2N2S78 2N2ST9 VDRM' Feik Forward Blocking Current (Rated V DRM with gate open, Tj = 125°C) 'DRM Peak Reverse Blocking Current (Hated V R S M ,Tj. 125°C) 'RRM Mh 29 SO 100 200 300 400 500 T|* — Untts volt* Mil 1 _ mA 0.6 5.0 0.6 S.O 20 40 1.0 3.9 mA — Gate Trigger Current (Continuous dc) (Anode Voltage * 7 Vdc, R L - 100 0) Gate Trigger Voltage (Continuous dc) (Anode Voltage « 7 Vdc, RL • 100 ft) (VDRM • R«**^RL "100n- T j " I2S°C) _ ^ VGT VGNT Forward On Voltage <I T - 20 Adc) VT Holding Current (Anode Voltage - 7 Vdc. Gate Open) IH Turn-On Time (tj + y UGT* 50 «A. IT • IDA) '«« Turn-OK Time (IT - 10 A, IR - 10 A, dv/dt =• 20 Y//II, Tj = 125°C) 'q mA 0.3 3.S Volts 1.1 dv/dt Thermal Resistance (Juncttqo to Case) «JC mA 20 — — 0S .0 —, MS 30 — Forward Voltage Application Rate (Gate Open, Tj - 12S°C) 1.4 — — (V D RM- rated voltage) Volt* —. V/MS ,y 30 — .0 — * V DRM 'or a11 tTPM CUI "• aPpU*d on * continuous dc basis wltbont Incurring damage. VORM ratings apply for zero or negative gate voltage. — 1.S °c/w