TIP41 (NPN) Series TIP42 (PNP) Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Complementary Silicon Power Transistor 6A/40~100V/65W FEATURES Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio h FE C TO-220AB package which can be installed to the heat sink with one screw Collector - Emitter Saturation Voltage: V CE(sat) = 1.5V dc (MAX.) @ I C = 6A B Collector - Emitter Saturation Voltage: V CEO(sus) = 40V dc (Min.) - TIP41,TIP42 = 60V dc (Min.) - TIP41A,TIP42A = 80V dc (Min.) - TIP41B, TIP42B = 100V dc (Min.) - TIP41C, TIP42C DC Current Gain h FE = 30 (Min.) @ I c = 0.3A High Current Gain - Bandwidth product f T = 3.0 MHz (Min.) @ I c =0.5A C E TO-220AB C C B B APPLICATIONS E Audio amplifier General purpose switching and amplifier E TIP41(NPN) TIP42(PNP) ABSOLUTE MAXIMUM RATINGS (TC = 25°C) VALUE SYMBOL PARAMETER TIP41 TIP42 TIP 41 A TIP 42 A TIP 41 B TIP 41 C TIP 42 B TIP 42 C VCBO Collector to base voltage (I E = 0) 40 60 80 100 V CEO Collector to emitter voltage (I B = 0) 40 60 80 100 V EBO Emitter to base voltage (I C = 0) 5 Collector current 6 IC I CM IB Base current PC Collector power dissipation (Derate above 25°C) V A 10 Collector peak current (t p < 0.3mS) UNIT 2 @T C = 25°C 65 (0.52) @T A = 25°C 2.0 (0.016) W(W/°C) Tj Junction temperature 150 T stg Storage temperature -65 to 150 ºC E Unclamped inductive load energy (Note 1) 62.5 mJ Note: 1. This rating is based on the capability of the transistor to operate safely is a circuit of: I C = 2.5A, L = 20mH, R BE = 100Ω, P.R.F. = 10 Hz, V CC = 10V THERMAL CHARACTERISTICS (TC = 25°C) SYMBOL PARAMETER Rth(j-c) Maximum thermal resistance, junction to case Rth(j-a) Maximum thermal resistance, junction to ambient www.nellsemi.com Page 1 of 5 VALUE UNIT 1.67 ºC/W 57 ºC/W TIP41 (NPN) Series TIP42 (PNP) Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) CONDITIONS PARAMETER SYMBOL MIN MAX Off Characteristics V CEO(SUS) ICEO IEBO I CES Collector to emitter sustaining voltage (Note 1) l C = 30mA, I B =0 Collector cutoff current 40 60 TIP 41 B,TIP 42 B 80 TIP 41 C,TIP 42 C 100 V CE = 30V, I B = 0 TIP 41 ,TIP 42 TIP 41 A,TIP 42 A V CE = 60V, l B = 0 TIP 41 B,TIP 42 B TIP 41 C,TIP 42 C Collector cutoff current Emitter cutoff current TIP41,TIP42 TIP 41 A,TIP 42 A V 0.7 mA V EB = 5V, I C = 0 1.0 V CE = 40V, V EB = 0 TIP 41 ,TIP 42 400 V CE = 60V, V EB = 0 TIP 41 A,TIP 42 A 400 V CE = 80V, V EB = 0 TIP 41 B,TIP 42 B 400 V CE = 100V, V EB = 0 TIP 41 C,TIP 42 C 400 µA On Characteristics V CE = 4V , I C = 0.3A 30 V CE = 4V, I C = 3A 15 h FE Forward current transfer ratio (DC current gain) V CE(sat) Collector to emitter saturation voltage (Note1) l C = 6A, l B = 0.6A 1.5 V BE(on) Base to emitter voltage (Note1) l C = 6A, V CE = 4V 2.0 75 V Dynamic Characteristics fT Current gain - Bandwidth product (note 2) l C = 0.5A, V CE = 10V, f test = 1MHz 3.0 h fe Small signal current gain l C = 0.5A, V CE = 10V, f = 1KHz 20 Note 1. Pulsed : Pulse duration ≤ 300 µS, duty cycle ≤ 2 . 0 %. Note 2. f T = |h fe | • f TEST Note 3. For PNP type voltage and current are negative. www.nellsemi.com Page 2 of 5 MHz TIP41 (NPN) Series TIP42 (PNP) Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 Power Derating TA Fig.2 Switching time test circuit TC VCC +30 V Power dissipation, P C (W) 4.0 80 Rc 25 µs 3.0 60 SCOPE +11 V RB 0 2.0 40 -9.0 V TC 1.0 20 D1 t r , tf ≤ 10 ns DUTY CYCLE = 1.0% TA -4 V RB and R C VARIED TO OBTAIN DESIRED CURRENT LEVELS 0 0 20 0 40 80 60 100 120 140 160 D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈100 mA Temperature, T (°C) Fig.3 Active region safe operating area 10 0.5ms Collector current ,I C (A) 5.0 1.0ms T J = 150°C 3.0 CURVES APPLY BELLOW RATED V CEO 2.0 Second Breakdown Limited 5.0ms 1.0 Thermal limit @ T J = 25˚C (Single pulse) 0.5 Bonding wire limit 0.3 TIP41.TIP42 0.2 TIP41A,TIP42A TIP41B,TIP42B TIP41C,TIP42C 0.1 10 5.0 20 80100 60 40 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate l C -V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curve indicate. The data of fig.3 is based on T J(pk) = 150°C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to10% provided T J(pk) ≤ 150 °C. T J(pk) may be calulated form the data in Figure 13. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Collector-emitter voltage , V CE (V) Fig.5 Turn-off time Fig.4 Turn-on time 5.0 2.0 1.0 T J = 25°C 3.0 0.7 V CC = 30V I C /I B = 10 2.0 1.0 0.3 Time, t (µS) Time, t (µS) 0.5 tr 0.2 0.1 0.07 0.05 0.2 0.4 0.6 1.0 0.5 0.3 0.2 2.0 0.07 0.05 0.06 0.1 4.0 6.0 tf 0.2 0.4 0.6 1.0 2.0 Collector current , I C (A) Collector Current, l C (A) www.nellsemi.com tS 0.7 0.1 t d @ V BE(off) ≈ 5.0V 0.03 0.02 0.06 0.1 I B1 = I B2 I C / I B = 10 V CC = 30V T J = 25°C Page 3 of 5 4.0 6.0 TIP41 (NPN) Series TIP42 (PNP) Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.6 Capacitance Fig.7 DC Current gain 300 500 300 T J = 25°C DC current gain, h FE Capacitance (pF) 200 C ib 100 70 C ob 200 V CE = 2.0V T J = 150°C 100 2 5°C 70 50 30 20 -5 5°C 50 10 7.0 5.0 0.06 0.1 30 0.5 2.0 3.0 1.0 5.0 20 30 10 50 4.0 6.0 Fig.9 “On”voltage Fig.8 Collector saturation region 2.0 2.0 T J = 25°C T J = 25°C 1.6 1.6 1.2 50A 2.5A I C = 1.0A Voltage , (V) Collector-emitter voltage, V CE (V) 2.0 Collector Current, l C (A) Reverse voltage, V R (V) 0.8 1.2 0.8 V BE(sat) @ I C /I B = 10 V BE @ V CE = 4.0V 0.4 0.4 0 0 V CE(sat) @ I C /I B = 10 10 20 30 50 100 200 300 500 1000 0.06 0.1 10 +2.5 +1.0 +25°C to +150°C +0.5 0 *θVC FOR V CE(sat) -55°C to +25°C -0.5 +25°C to +150°C -1.0 -1.5 θVB FOR V BE -2.0 -2.5 0.06 0.1 Collector current ,I C (µA) +2.0 +1.5 2.0 3.0 4.0 6.0 10 10 10 10 3 2 V CE = 30V 100°C 1 T J = 150°C 25°C 0 -1 I C = I CES Reverse 10 Forward -2 -55°C to +25°C 10 0.2 0.3 0.4 0.6 1.0 -3 -0.3 -0.2 -0.1 2.0 3.0 4.0 6.0 Collector current, I C (A) www.nellsemi.com 1.0 Fig.11 Collector cut-off region Fig.10 Temperature coeffcients APPLIES FOR I C /I B ≤ h FE /4 0.2 0.3 0.4 0.6 Collector Current, l C (A) Base current , l B (mA) Temperature coefficients, θV (mV/˚C) 0.2 0.3 0.4 0.6 1.0 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 +0.7 Base-emitter voltage, V BE (V) Page 4 of 5 TIP41 (NPN) Series TIP42 (PNP) Series SEMICONDUCTOR RoHS RoHS Nell High Power Products External base-emitter resistance, R BE (Ω) Fig.12 Effects of base-emitter resistance 10 V CE = 30V 1.0 I C = 10×I CES I C ≈ I CES 100 10 I C = 2×I CES 1.0 (Typical I CES values obtained from flgure 11) 0.1 60 40 20 100 80 120 140 160 Transient thermal resistance, r(t) (normalized) Junction temperature, T J (˚C) Fig.13 Thermal response 1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 Zth(j-c) = r(t) Rth(j-c) 0.05 Rth(j-c) (t)=1.67°C/W Max. D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(PK) - TC = P(PK) Zth(j-c)(t) 0.02 0.03 0.01 0.02 Single pulse 0.01 0.01 0.02 0.05 1.0 0.5 0.2 1.0 5.0 2.0 10 20 50 P (PK) t1 t2 DUTY CYCLE, D = t1/t2 100 Time, t (mS) Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) C B 1 2 E 3 16.13 (0.635) 15.87 (0.625) 4.06 (0.160) 3.56 (0.140) 15.32 (0.603) 14.55 (0.573) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) www.nellsemi.com 14.22 (0.560) 13.46 (0.530) 0.90 (0.035) 0.70 (0.028) 5.20 (0.205) 4.95 (0.195) Page 5 of 5 0.56 (0.022) 0.36 (0.014) 200 500 1000