npn silicon high frequency transistor 2n4428

, Una.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
NPN SILICON HIGH FREQUENCY TRANSISTOR
PACKAGE STYLE TO-39
1
2N4428
*a
A
4>b
«bi
4>0
»Dt
h
1
k
1
I,
1:
P
Q
MAXIMUM RATINGS
425mA
Ic
VCE
30V
PDISS
3.5 W @ Tc = 25 °C
a
DIMENSIONS
UILUMETERS
INCHES
WIN.
MAX.
WIN.
MAX.
0190
0210
4.83
533
0240
0260
0.021
610
0.406
0406
889
800
0229
0.711
0.737
12.70
0016
0016
0019
0350
0370
0.335
0.125
0.034
0.040
0315
0.009
0028
0.029
0500
3.18
0.864
1.02
635
254
L
-65 °C to +200 °C
45° NOMINAL
90' NOMINAL
TSTG
-65 °C to +200 °C
1 = EMITTER
2 = BASE
3 = COLLECTOR
50 °C/W
0JC
8.51
1 27
0050
0250
0 100
6.60
0.533
0.483
940
CHARACTERISTICS Tc = 25°c
TEST CONDITIONS
SYMBOL
BVcEo
lc = 20 mA
BVCER
lc = 20mA
BVEBO
l c =100|oA
ICEX
V C E =55V
hFE
VCE = 5.0 V
R BE =10ii
TYPICAL
55
V
3.5
V
1.0
700
f = 1 .0 MHz
Vcc = 28 V
f = 200 MHz
Pout
=
750
mW
Rs
=
50
Q
t\E = 20 V
lc = 50 mA
f = 200 MHz
UNITS
V
20
5.0
lc = 50 mA
lc = 400 mA
VCB = 28 V
MAXIMUM
35
VBE = -1.5V
ft
COB
MINIMUM
200
1000
1.5
Pin
35
mA
—
MHz
3.5
PF
75
mW
%
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