, Una. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SA1942 Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown VoltagePIN LEASE :V(BR)CEo=-160V(Min) 2.COLLECTOR • Complement to Type 2SC5199 3. BETTER 1 TO-3PL package 2 3 APPLICATIONS • Power amplifier applications • Recommend for SOW high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V Ic Collector Current-Continuous -12 A IB Base Current-Continuous -1.2 A PC Collector Power Dissipation @ TC=25°C 120 W Junction Temperature 150 Tj r D~H I*- i 1 -IF Li mm DIM A B C D E F G H J K N P q R Tstg Storage Temperature Range -55-150 •c . u w MIN MAX 25.50 26.50 19.80 4.50 0.90 2.80 2.40 10.80 J.10 20JO 5.50 1.10 3.20 2.60 11.00 3.30 0.70 21.00 4.10 OJO 20.00 3.90 2,40 3.10 1.90 340 2.90 | 2£0 3.50 2.10 4.10 l.*0 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Silicon PNP Power Transistor 2SA1942 ELECTRICAL CHARACTERISTICS Tc=25'C unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA; IB= 0 VcE(sat) Collector-Emitter Saturation Voltage lc=-8.0A; IB=-0.8A -2.5 V VsE(on) Base-Emitter On Voltage lc= -6A; VCE= -5V -1.5 V ICBO Collector Cutoff Current V CB =-160V;I E =0 -5 uA IEBO Emitter Cutoff Current VEB= -5V; lc= 0 -5 uA hpE-1 DC Current Gain lc=-1A;V C E=-5V 55 hFE-2 DC Current Gain lc= -6A; VCE= -5V 35 COB Output Capacitance IE=0; VCB= -10V; f= 1.0MHz 320 PF Current-Gain— Bandwidth Product lc=-1A;V CE =-5V 30 MHz fr • hpE-1 Classifications R O 55-110 80-160 CONDITIONS MIN TYP. MAX -160 UNIT V 160