NJSEMI 2SA1941

<zy\£.uj J.
, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA1941
Silicon PNP Power Transistor
I
I \ •-<
DESCRIPTION
• Low Collector Saturation Voltage: VCE(sat)=- 2.0V(Min) @lc=- 7A
• Good Linearity of hFE
3
• Complement to Type 2SC51 98
APPLICATIONS
• Power amplifier applications
• Recommend for 70W high fidelity audio frequency
M
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-140
V
2. COLLECTOR
3. EMITTER
TO-3PN package
W
I .fy
I I
K
3
PIN 1.BASE
^ r!
jf
f
:
':
ffl
I
p
-*it*-J
VCEO
Collector-Emitter Voltage
-140
V
-*•
»iii*-'D
*--R
mm
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-10
A
IB
Base Current-Continuous
-1
A
PC
Collector Power Dissipation
@T.-25°r
100
W
Tj
Junction Temperature
150
°C
-55-150
•c
VEBO
Tstg
Storage Temperature Range
DIM
A
B
C
D
F
F
G
H
J
K
L
N
MIN
MAX
19.90 20.10
15.50 15.70
4.70 4.90
0.90
1.10
1 90 2 10
3.40
3.60
3.10
2.90
3.20
3.40
0.595 0.605
20.50 20.70
1.90
2.10
10.89 10.91
q 4.90 J 5.10
R
3.35 3.45
S 1.995 2.005
u 5.90 >.1 \
Y I 9.90 1<>.1
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time ot'going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon PNP Power Transistor
2SA1941
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
l c =-50mA; IB= 0
VcE(sat)
Collector-Emitter Saturation Voltage
lc= -7.0A; IB= -0.7A
-2.0
V
VsE(on)
Base-Emitter On Voltage
lc=-5A;V CE =-5V
-1.5
V
ICBO
Collector Cutoff Current
V CB =-140V; IE=0
-5
WA
IEBO
Emitter Cutoff Current
VEB= -5V; lc=0
-5
nA
hpE-1
DC Current Gain
lc=-1A;V CE =-5V
55
hpE-2
DC Current Gain
lc= -5A ; VCE= -5V
35
COB
Output Capacitance
l E =0;VcB=-10V;f te st= 1.0MHz
320
pF
Current-Gain— Bandwidth Product
lc=-1A; VCE=-5V
30
MHz
ft
-140
V
160