J , U na. £Z>£mi-L.onau.ctoi TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power MOSFETs, 11 A, 60-100 V Power And Discrete Division Description TO-204AA TO-220AB IRF120 IRF121 IRF122 IRF123 IRF520 IRF521 IRF522 IRF523 MTP10N08 MTP10N10 These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. Low RDs<on) VQS Rated at ±20 V Silicon Gate for Fast Switching Speeds bss. Vos(on), Specified at Elevated Temperature Rugged Low Drive Requirements Ease of Paralleling Product Summary Part Number VDSS RoS(on) ID at Tc = 25°C ID at Tc = 100-C Case Style IRF120 100 V 0.30 n 8.0 A 5.0 A TO-204AA IRF121 60 V 8.0 A 5.0 A IRF122 100 V IRF123 60 V IRF520 100 V IRF521 60 V IRF522 100 V 0.30 n 0.40 n 0.40 n 0.30 n 0.30 n o.4o n IRF523 60 V 0.40 Ji 7.0 A 4.0 A MTP10N08 80 V 0.33 fi 10 A 6.4 A MTP10N10 100 V 0.33 n 10 A 6.4 A 7.0 A 4.0 A 7.0 A 4.0 A 8.0 A 5.0 A 8.0 A 5.0 A 7.0 A 4.0 A TO-220AB Notes For information concerning connection diagram and package outline, refer to Section 7. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors IRF120-123/IRF520-523 MTP10N08/10N10 Maximum Ratings Rating IRF120/122 IRF520/522 MTP10N10 Rating MTP10N08 VDSS Drain to Source Voltage1 VDGR Drain to Gate Voltage1 RQS = 20 kft VGS Gate to Source Voltage ±20 ±20 ±20 V Operating Junction and Storage Temperatures -55 to +150 -55 to +150 -55 to +150 °c 275 275 275 °c Characteristic Symbol Tj, T8|g TL Maximum Lead Temperature for Soldering Purposes, 1/8" From Case for 5 s Rating IRF122/123 IRF522/523 Unit 100 80 60 V 100 80 60 V Maximum Thermal Characteristics IRF120-123/IRF520-523 MTP10N08/10 Thermal Resistance, Junction to Case 3.12 1.67 "C/W RftJA Thermal Resistance, Junction to Ambient 30/80 80 °C/W PD Total Power Dissipation at Tc = 25°C 40 75 W IDM Pulsed Drain Current2 20 32 A R«JC Electrical Characteristics (Tc = 25°C unless otherwise noted) Symbol Characteristic Win Max Unit Test Conditions Off Characteristics V(BR)DSS loss IQSS Drain Source Breakdown Voltage1 IRF120/122/520/522/ MTP10N10 MTP10N08 80 IRF121/123/521/523 60 Zero Gate Voltage Drain Current Gate-Body Leakage Current IRF120-123 IRF520-523/MTP10N08/10 V VGS = 0 V, ID = 250 MA 250 UA VDS - Rated VDSS. VGS - 0 V 1000 MA VDS = 0.8 x Rated VDSs, VGS = 0 V, T C =125°C nA VQS - ± 20 v, VDS - o V 100 ±100 + 500 IRF120-123/IRF520-523 MTP10N08/10N10 Electrical Characteristics (Cont.) (Tc = 25°C unless otherwise noted) Characteristic Symbol Max Win Unit Test Conditions On Characteristics VGS(UI) RDS(on) VDS(on) 9ls Gate Threshold Voltage V IRF120-123/IRF520-523 2.0 4.0 MTP10N08/10N10 2.0 4.5 ID = 250 MA, VDS = VQS ID = 1 mA, VDS = VGS n Static Drain-Source On-Resistance2 VGS -10 V IRF120/121/520/521 0.30 ID = 4.0 A MTP10N08/10N10 0.33 ID = 5.0 A IRF122/123/522/523 0.40 Drain-Source On-Voltage2 MTP 10N08/10N10 Forward Transconductance ID = 4.0 A VGS =10 V; ID -10.0 A 4.0 V 3.3 V VQS = 10 V, ID = 5.0 A T 0 = 100-C S (U) VDs = 10 V, ID = 4.0 A VDS = 25 V, VGS = o v f - 1.0 MHz 1.5 Dynamic Characteristics Mss Input Capacitance 600 PF Coss Output Capacitance 400 pF Crss Reverse Transfer Capacitance 100 pF Switching Characteristics (Tc = 25°C, Figures 1, 2)3 40 ns 70 ns 100 ns td(on) Turn-On Delay Time t, Rise Time td(oH) Turn-Off Delay Time t( Fall Time 70 ns Q8 Total Gate Charge 15 nC Symbol ^ Characteristic Typ Max Unit VDD = 50 V, ID = 4.0 A V QS = 10 V, RGEN = 50 a RGS = 50 n VGS -10 v, ID = 10 A VDD =• 50 V Test Conditions Source-Drain Diode Characteristics VSD tn- Diode Forward Voltage IRF120/121/520/521 2.5 V ls = 8.0 A; VGS = 0 V IRF122/123/522/523 2.3 V ls - 7.0 A; VGS = 0 V ns ls - 4.0 A; dls/dt - 25 A/MS Reverse Recovery Time 280 Notes 1. Tj - +25'O to +150'C 2. Pulse width limited by Tj 3. Switching time measurements performed on LEM TR-5B test equipment.