Power MOSFET IRF620, SJHF620

, IJ nc,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Power MOSFET
PRODUCT SUMMARY
200
VDS(V)
RDS(on)
VGS=10V
(ty
IRF620, SJHF620
0.80
Qg (Max.) (nC)
14
Qgs(nC)
3.0
7.9
Qgd (nC)
Configuration
FEATURES
• Dynamic dV/dt Rating
Single
D
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
TO-220AB
J,
• Simple Drive Requirements
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
o
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRF620PbF
Lead (Pb)-free
SiHF620-E3
IRF620
SiHF620
SnPb
ABSOLUTE MAXIMUM RATINGS O'c = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
VDS
VGS
±20
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Tc = 25 °C
VyyUtlUV
mnoo
TC = 1 00 C
Pulsed Drain Current3
ID
'DM
200
UNIT
V
5.2
3.3
A
18
0.40
w/°c
Single Pulse Avalanche Energyb
EAS
110
mJ
Repetitive Avalanche Current3
IAR
5.2
A
Repetitive Avalanche Energy3
EAR
5.0
mJ
Linear Derating Factor
Maximum Power Dissipation
T0 = 25 "C
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10s
6-32 or M3 screw
PD
50
W
dV/dt
5.0
V/ns
Tj, Tstg
-55 to + 150
300d
°C
10
Ibf • in
1.1
N-m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting Tj = 25 °C, L = 6.1 mH, Rg = 25 Q, IAS = 5.2 A (see fig. 12).
c. ISD < 5.2 A, dl/dt < 95 A/us, VDD < VDS, Tj < 150 °C.
d. 1.6 mm from case.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRF620, SIHF620
THERMAL RESISTANCE RATINGS
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
2.5
PARAMETER
UNIT
°c/w
SPECIFICATIONS (Tj = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
VDS
AVDS/Tj
VGS = 0 V, ID = 250 uA
200
-
-
V
Reference to 25 °C, ID = 1 mA
-
0.29
-
v/°c
VDS = VGS, ID = 250 uA
VGS = ± 20 V
2.0
-
4.0
V
-
-
±100
nA
VDS = 200 V, VGS = 0 V
-
-
25
-
-
250
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
VQS(th)
bss
IDSS
RcS(on)
9fs
VDS = 160 V, VGS = 0 V, Tj = 125 °C
VGS = 10V
!D = 3.1A b
VDS = 50V, b = 3.1 A
uA
-
-
0.80
n
1.5
-
-
5
-
260
-
-
100
-
Dynamic
Input Capacitance
Q55
Output Capacitance
Coss
Reverse Transfer Capacitance
VGS - 0 V,
VDS = 25 V,
f = 1 .0 MHz, see fig. 5
Cres
-
30
-
Total Gate Charge
Qg
-
-
14
Gate-Source Charge
Qgs
-
-
3.0
Vrs-10V
VGS-TUV
b -4.8 A, VDS -160V,
see fig. 6 and 13b
Gate-Drain Charge
Q9d
-
-
7.9
Turn-On Delay Time
td(on)
-
7.2
-
-
22
-
-
19
-
-
13
-
4.5
-
-
7.5
-
-
-
5.2
-
-
18
Rise Time
Turn-Off Delay Time
tr
'd(off)
Fall Time
tf
Internal Drain Inductance
LD
Internal Source Inductance
Ls
V D D =100V, ID = 4.8 A,
Rg = 18 n, RD = 20O, see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
s\
(I NI Tj
vll^*
-
4
PF
nC
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Is
Pulsed Diode Forward Current3
ISM
Body Diode Voltage
VSD
MOSFET symbol
showing the
integral reverse
p - n junction diode
/fjZik
(,(J j*]_t)
xtif
-
-
1.8
V
trr
-
150
300
ns
Body Diode Reverse Recovery Charge
Qrr
-
0.91
1.8
uC
Forward Turn-On Time
ton
Body Diode Reverse Recovery Time
Tj = 25 °C, ls = 5.2 A, VGS = 0 V»
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)