u
, L/ nc.
^s.mi-Conducto'i
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MTP12N08L
MTP12N10L
Designer's Data Sheet
Power Field Effect Transistor
N-Channel Enhancement-Mode
Silicon Gate TMOS
TMOS POWER FETs
LOGIC LEVEL
AMPERES
*DS(onJ - 0.1SOHM
80 and 700 VOLTS
These Logic LaveJ TMOS Power FETs are designed for high
speed power switching applications such as switching regulators,
converters, solenoid and relay drivers.
• Low Drive Requirement to Interface Power Loads to Logic Level
»Cs or Microprocessors — VQS(th) s 2 Volts m8X
• Silicon Gate for Fast Switching Speeds — Switching Times
Specified at 100*0
• Designer's Data — I&SS. VDS(on)' VQS(th) a«d SOA Specified
at Elevated Temperature
• Rugged •— SOA is Power Dissipation limited
• Source-to-Drain Diode Characterized for Use With Inductive Loads
MAXIMUM RATINGS
Symbol
MTP12N001
MTP12N10L
Unit
Voss
80
100
Vdc
L VDGR
80
100
V<JC
Rating
Draift'Source Voltage
Drain-Gate Voltage <f»GS = 1 Mft)
Gate-Source Voltage
Drain Current — Continuous
— Pulsed
Towl Power Dissipation @ TC = 25"C
Derate above 25"C
Operating and Storage Temperature Range
'
VGS
= 1S
Vde
ID
'DM
12
30
Adc
PD
75
0.6
Watts
w/*c
Tj. TSq
-6510150
•c
«WC
R WA
7.67
62.5
TL
275
THERMAL CHARACTERISTICS
"C/W
Thermal Resistance
Junction to Case
Junction to Arnbient
Maximum Lead Temperature for Soldering
Purposes. 1/8" from casa for S seconds
ELECTRICAL CHARACTERISTICS (Tc = 2S'C
•c
TO-220AB
noted)
Characteristic
Symbol
HWW
Max
80
100
—
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
«VGS = o. ID «= 2SO ^AI
MTPIZNOSL
vtep|oss
MTP12N1OL
Zero Gate Voltage Drain Currant
(Vos = Rated VpsS- VGS " OI
(Vps « R«*d VDSS- vcss « o. TJ = 125*0
IDSS
__
1
L
Vdc
»tAOc
X
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders.
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS — continued ITC = 2gC ufllessjKnei-wise rioted)
Symbol
Characteristic
MTn
M«
Unit
.
OFF CHARACTERISTICS (continued)
Gate-Body Leakage Current, Forward
(VGSF* iSVdc, VDS = 0)
IGSSF
—
100
nAdc
Gate Body leakage Currant. Reverse
<VG5R ~ 's Vde- VDS - °'
ON CHARACTERISTICS
'GSSR
—
100
nAdC
1
0.75
2
1.S
—
0.18
—
2.4
1.6
5
—
Gat* Threshold Votogc
vdc
vGS(thl
(VDS = V-QS- ID = "> "»*>
(Tj = KWO
Static Drain-Source On-Resistance iv^g = $ v«, ip = 6 Adc)
rDS(on)
Drain-Source On-Voltage (VGS = S V)
(ID = 12 Add
llQ = 6 Ado. Tj = 100°CI
VOS(On)
Forward TransconduCtaAoe (Vjjg = 10 V. IQ = 6 A)
Ohm
Vdc
9FS
mhos
DYNAMIC CHARACTERISTICS
VQS a 25 V, VQS a a f - 1 MHl
input Capacitance
Reverse Transfer Capacitance
Output Capacitance
VGS =
15 v- VDS
= 0. f = 1 MHr
VDg = 25 V, VQS = 0- f - 1 MH*
VGS = 1S v- VDS = o. f « i MHI
VOS w 25 V, VQS - 0. f = 1 MHz
C;M
crss
coss
—
800
—
—
2600
—
—
1600
PF
350
pF
100
pf
50
ns
SWTTCHING CHARACTERISTICS (Tj = 100*C)
Turn-On Delay T»me
Rise Time
Turn-Off Delay Time
—
—
—
_
'd(On)
iVDD= 25V. ID = 6A.
VGS = S V, R9en = 50 ohms)
Fail Time ,
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
'r
'd(off)
t0 = 12 A. VQS = 5Voe)
See Rgures 11 and 12.
130
ISO
«f
{Vos " °-8 R«ed VDSS-
ISO
1S(typ)
SS
3.' ttvp)
Qa
Q^s
°9d
11.3(typ)
—
—
VSD
Ktypl
1.25
nC
SOURCE DRAIN WOOE CHARACTERISTICS
Forward On-Vo1»g«
Forward Tum-On Time
<IS - Rated ID, VQS « 0)
See Figures 14 and IS.
Reverse Recovery Time .
Vdc
Limited by Stray inductance
ton
325 (typ)
trr
—
ns
_
nH
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25" from package to center of di«)
Ld
Internal Source Inductance
(Measured from the source lead 0.2S" from package to source bond pad.)
LS
•Pulse Test: Pulse Width * 300 MS. Duty Cycle « 2%.
3.$ (typ)
4-5 Itvp)
;
'.S (typ)
—