E.1 is.il ^>E.tnL-dona\jt.c.t:oi iPtoaacfi, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 IRFZ34 Power MOSFET FEATURES • Dynamic dV/dt Rating PRODUCT SUMMARY V DS (V) 60 VGS = 10V FlDS(on) (^) • 175 °C Operating Temperature 0.050 46 • Fast Switching Qgs(nC) 11 • Ease of Paralleling Qgd (nC) 22 • Simple Drive Requirements Qg (Max.) (nC) Configuration Single J, u TO-220AB GO If 0 s N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (Tc = 25 °C, unless otherwise noted) SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 PARAMETER Continuous Drain Current V-c it 10 V Pulsed Drain Current3 ID IDM Maximum Power Dissipation Tc = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range 21 A 120 0.59 W/°C EAS 200 mJ PD 88 W dV/dt 4.5 V/ns Tj, Tstg - 5 5 t o + 175 Linear Derating Factor Single Pulse Avalanche Energyb V 30 Tc = 25 °C TC = 100°C UNIT °C Soldering Recommendations (Peak Temperature) for 10 s 300d 10 Ibf • in 1.1 N -m 6-32 or M3 screw Mounting Torque Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting T, = 25 °C, L = 259 uH, Rg = 25 U, IAS = 30 A (see fig. 12). c. ISD £ 30 A, dl/dt < 200 A/MS, VDD < VDS, Tj < 175 °C. d. 1.6 mm from case. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors THERMAL RESISTANCE RATINGS SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) fyhJC - 1.7 PARAMETER UNIT °c/w SPECIFICATIONS (Tj = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS VGS = 0 V, ID = 250 uA 60 - - V AVDs/Tj Reference to 25 °C, ID = 1 mA - 0.065 - v/°c VGS(th) VDS = VGS, ID = 250 uA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V - - 25 bss VDS = 48 V, VGS = 0 V, T, = 150 °C - - 250 Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(on) VGS = 10V !D = 18A b VDS = 25V, ID = 18 A 9fs MA - - 0.050 Q. 9.3 - - S - 1200 - - 600 - - 100 - - - 46 - - 11 - 22 Dynamic Input Capacitance Ciss Output Capacitance CQSS Reverse Transfer Capacitance Crss Total Gate Charge VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 Qg v _10V ID = 30 A, VDS = 48V, see fig. 6 and 13b Gate-Source Charge Qgs Gate-Drain Charge Qgd - Turn-On Delay Time td(on) - 13 - tr - 100 - - 29 - - 52 - - 4.5 - - 7.5 - - 30 - 120 Rise Time Turn-Off Delay Time VDD = 30 V, ID = 30 A, R g = 12fi, R D = 1.0 £J, see fig. 10b td(off) Fall Time tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact /fi~"% (I NI T} V_^s MOSFET symbol showing the n t~i\l reverse PF nC ns nH Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Is Pulsed Diode Forward Current" ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton - p - n junction diode Tj = 25 °C, ls = 30 A, VGS = 0 Vb T 9R °P 1 ^("1 A HI/Ht 1 HO A/no A - - 1.6 V - 120 230 ns - 0.7 1.4 nC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width < 300 us; duty cycle < 2 %.