, Una.
TELEPHONE: (973) 376-2922
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
(212)227-6005
FAX: (973) 376-8960
MRF501 (SILICON)
MRF502
The RF Line
NPN SILICON
RF SMALL-SIGNAL
TRANSISTORS
NPN SILICON RF SMALL-SIGNAL TRANSISTORS
. . . designed primarily for use in high-gain, low-noise amplifier,
oscillator, and mixer applications. Can also be used in UHF converter
applications.
• High Current-Gain • Bandwidth Product —
ft - 1 .2 GH/ (Typ) ® Ic - 5.0 mAdc
• Low Noise Figure NF = 4.0 dB (Typ) @ f - 200 MHi
f
|— —-j— 8
L
T~
1
T!
SEATING
PLANE
MAXIMUM RATINGS
RMinf
CollKUX-Emitnr Voltage
Symbol
MRFSO1 | MRF5O2
VCEO
1S
Colleetor-Bw Voltagl
VCBO
Emitter-five Voltage
V£BQ
25
[
Unit
V*
36
3.5 •
Vdc
Vdc
Collector Current
Ic
50
mAdc
Totil Device Oinlpttion 0 TA - 2S°C
Derate Ibovi 2S°C
Po
200
114
m«
mW/°C
Tng
-65 to +2OO
°C
Storage T«npKMur> Range
STYLE 10
PIN1
2.
3
4.
1 ('
E
J.
EMinER
_D
BASE
—»
COLLECTOfl
CASE
f
C
K
ITNN
\M
T
^
MILLII ETERS
A
•
c
D
E
F
G
H
J
K
L
H
5.31
4.S?
4.32
0.41
~
0.41
2.5.
0.91
0.7!
12.70
6.35
5^4
4.95
5.33
0.53
0.7?
0.48
BSD
1.17
1.22
_
i
G
s
!«a MX
|
1
0.209
0.171
0.170
00t6
0 .230
1 -1SS
1 110
1 .021
1 .030
D.016 J .019
01008 !C
0.036 C Jus
0.028 1 .041
0500
-
_y&o _
tS'p.
•*r l$l
OMOt C
147 BSC
f•
1 1 .050
tip
ALL JEDEC diiMflHom md nom vply
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
MRF501, MRF502 (continued)
ELECTRICAL CHARACTERISTICS (TA - 25°c uniw ottwrvrae nond)
I
I
Symbol
TV,
I Urt. I
I
OFF CHARACTERISTICS
Coltoctor-EmrtUr Breakdown Voltaga
(lc - 3.0 mAdc. IB - 0)
Vdc
BVceo
IS
Coll«ctOf-B«w Breakdown Vcritao*
(l c - 1.0 MAdc, I E -0)
MR F5O1
MRF502
BVCBO
evEBO
Emitw-Ben Breakdown Voltaga
<l£-1.0pAdc,l c -0)
Colltttor Cutoff Currant
(V ca - 1.0 Vdc. I E -0)
MRFS01
MRF602
'CBO
MRFS01
MRF502
"FE
:
25
36
~
Vdc
Vdc
3.6
-
so
30
40
-
25O
170
-
600
1000
1200
_
MHz
800
~
0.6
-
-
nAdc
20
ON CHARACTERISTICS
DC Currant Gain
llr; -1.0 mAdc, Vce- 6.0 Vdc)
DYNAMIC CHARACTERISTICS
Currant Gain - Bandwdlth Product
MRFS01
|IC - 6.0 mAdc, VCE - 6-0 Vdc, f - 100 MHz) MRF502
Collector-Baai Capacitance
^cto
(VCB - 10 vdc, iE - o, f • o.i to 1.0 MHZ)
Colteetor.Baee Time Conitant
HE - 2.0 mAdc, VCB - 6-0 Vdc, f - 31 .8 MHz)
Noia. Figure
(Figure!)
llc • 1.5 mAdc, VCE -6.0 Vdc,
RS - SOohmi, f - 200 MHz)
ff
pc
'
rb'Cc
pi
8.0
MRF501
MRF602
NF
-
4.5
4.0
_
15
17
dB
=
FUNCTIONAL TEST
Common-EmitW Amplifier Pow«r Gain (Figure 1) MRFS01
(Vcc - 6-0 Vdc, lc - 6.0 mAdc, f - 200 MHz) MRFB02
Gp.
FIGURE 1 - MOMHl AMPLIFIER POWER GAIN
AND NOISE FIGURE CIRCUIT
1N319S
LI 13/4Turn, til AWG, 0.5" Long, 0.5" DiirMir
L2 2Tufm,#16AWG,0.5" Long.IU"D*in«ir
L3 2 Turin, fit AWG, 0 25" Long, 0.5" Oiimrtr, Portion ApproikniUly OJS" from L2
-
dB