^zmi-L.onau.cto'i , Una. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN RF Transistor BFR520 DESCRIPTION • High Power Gain ^^ • High Current Gain Bandwidth Product SOT- 2 3 package • Low Noise Figure APPLICATIONS • Designed for RF frontend in wideband applications in the -H,M f ^•111 GHz range.such as analog and digital cellular telephones, cordless. Tl Marking PARAMETER VALUE Collector-Base Voltage 20 V VCES Collector-Emitter Voltage 15 V Lp L-1 L_l PC Tj Tstg Collector Current-Continuous Collector Power Dissipation @TC=25°C Junction Temperature Storage Temperature Range 2.5 70 0.3 175 -65-150 V mA W 'C °C n 1—1 \ 1L T 1 .—I- =J | ML M 4 mm DIM Ic 3 ; Collector UNIT VCBO Emitter-Base Voltage ~ • Emitter 6 / VEBO 1 : Base LI' I U:^L 1L— I*—D*I-| ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL B c 4 I MIN MAX A 0. 37 0.51 B 1,19 1. 10 C 2. 10 2,50 D 0.89 1.05 IL- 1. 78 2.05 K 2.65 3.05 K 1. 10 1.20 L 0. -!5 0.61 M 0.076 0. ITS NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Silicon NPN RF Transistor BFR520 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise specified SYMBOL CONDITIONS PARAMETER ICBO Collector Cutoff Current VCB= 6V; IE= 0 hFE DC Current Gain lc= 20mA ; VCe= 6V Current-Gain — Bandwidth Product lc= 20mA ; VCE= 6V; f= 1GHz COB Output Capacitance PG PG MIN TYP. 60 MAX UNIT 0.05 nA 250 9 GHz IE= 0 ; VGB= 6V; f= 1 MHz 0.5 PF Power Gain lc= 20mA ; VCE= 6V; f= 900MHz 15 dB Power Gain lc= 20mA ; VCE= 6V; f= 2GHz 9 dB Insertion Power Gain lc= 20mA ; VCE= 6V; f= 900MHz 14 dB NF Noise Figure lc= 5mA ; VCE= 6V; f= 900MHz 1.1 1.6 dB NF Noise Figure lc= 20mA ; VCE= 6V; f= 900MHz 1.6 2.1 dB fi 1 S21e I 2 13 250 400 VCE=6V Ptot (mWj 200 300 \0 100 150T150( 'C)200 S C 200 100 100 50 0"-^ 10 Power derating curve l c (mA) 102 DC current gain as a function of collector current