NJSEMI 2SA2121

I S.IIS.L
, Line.
Cx
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
2SA2121
DESCRIPTION
• High Current Capability
• High Power Dissipation
PIN 1.BASE
• High Collector-Emitter Breakdown Voltage-
2.COLLECTOR
: V(BR)CEo= -200V(Min)
• Complement to Type 2SC5949
3. EMITTER
1
TO-3PL package
2 3
APPLICATIONS
• Power amplifier applications
• Recommended for audio frequency amplifier output stage.
H !
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
-1.5
A
PC
Tj
mm
DIM
A
Collector Power Dissipation
@ Tc=25r
220
Junction Temperature
150
B
C
D
E
F
W
G
H
J
'C
K
N
P
Q
R
Tstg
Storage Temperature Range
-55-150
°c
LI
W
MIN
MAX
25.50
Ksa
19.30
4.50
0.90
2.80
2.40
10,80
3.10
0.50
20 JO
5,50
1.10
3.20
2.60
11.00
3.30
0.70
21.00
4.10
2.60
3.50
2.10
4.10
3.10
20.00
3.90
2.40
3.10
1.90
3.90
2 JO
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon PNP Power Transistor
2SA2121
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
lc= -50mA ; IB= 0
VcE(sat)
Collector-Emitter Saturation Voltage
I C =-10A;I B =-1A
-3.0
V
VeE(on)
Base-Emitter On Voltage
lc= -8A ; VCE= -5V
-1.5
V
ICBO
Collector Cutoff Current
VCB= -200V ; IE= 0
-5
UA
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
-5
uA
hpE-1
DC Current Gain
lc=-1A; VCE=-5V
55
hFE-2
DC Current Gain
lc= -8A ; VCE= -5V
35
COB
Output Capacitance
IE=0 ; VCB= -1 OV;f= 1.0MHz
Current-Gain— Bandwidth Product
lc=-1A;V C E=-5V
fr
hpE-1 Classifications
R
0
55-110
80-160
-200
V
160
470
PF
25
MHz