NJSEMI 2SA1987

, Line.
J.E.ii£.
TELEPHONE: (973) 376-2922
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
(212)227-6005
FAX: (973) 376-8960
Silicon PNP Power Transistor
2SA1987
DESCRIPTION
• High Current Capability
• High Power Dissipation
PIN 1.BASE
• High Collector-Emitter Breakdown Voltage-
2.COLLECTOR
: V(BR)CEO= -230V(Min)
3. EMITTER
• Complement to Type 2SC5359
1
TO-3PL package
2 3
APPLICATIONS
• Power amplifier applications
• Recommend for 100W high fidelity audio frequency amplifier
output stage applications
H
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-230
V
VCEO
Collector-Emitter Voltage
-230
V
VEBO
Emitter-Base Voltage
-5
V
!**- j
Ic
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
-1.5
A
mm
DIM
A
B
C
D
E
PC
Collector Power Dissipation
@ TC=25°C
180
W
Tj
Junction Temperature
150
•c
F
G
H
J
K
N
P
-55-1 50
•c
u
q
R
Tstg
Storage Temperature Range
W
WIN
MAX
25,50
26^0
19.80
4.50
0.90
2^0
20 JO
5^0
1.10
3 JO
2.40
10.80
3.10
0.50
20:00
3.90
2.40
3,10
2j60
11.00
3JO
0.70
21.00
4.10
2.60
3^0
2.10
4.10
3»
2JO | 3,10
r i.9o
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon PNP Power Transistor
2SA1987
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
l c =-50mA;lEr 0
VcE(sat)
Collector-Emitter Saturation Voltage
I C =-8.0A;I B =-0.8A
-3.0
V
VBE(OH)
Base-Emitter On Voltage
|c= -7A ; VCE= -5V
-1.5
V
Iceo
Collector Cutoff Current
VCB= -230V ; IE= 0
-5
uA
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
-5
nA
hpE-1
DC Current Gain
lc=-1A;V C E=-5V
55
hpE-2
DC Current Gain
lc= -7A ; VCE= -5V
35
COB
Output Capacitance
I E =0; VCB=-10V;f= 1.0MHz
360
pF
Current-Gain— Bandwidth Product
lc=-1A;V C E=-5V
30
MHz
fr
hpE-1 Classifications
R
O
55-110
80-160
-230
V
160