, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF421 Designed primarily for application as a high-power linear amplifier from 2.0 Product Image to 30 MHz. Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP) Minimum gain = 10 dB Efficiency = 40% Intermodulation distortion @ 100 W (PEP) — IMD = -30 dB (min.) 100% tested for load mismatch at all phase angles with 30:1 VSWR CASE 211-11 MAXIMUM RATINGS Rating Symbol Value Unit VCEO 20 Vdc Collector-Base Voltage VCBO 45 Vdc Emitter-Base Voltage VEBO 3,0 Vdc Collector-Emitter Voltage Collector Current — Continuous lc 20 Adc Withstand Current — 10s — 30 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 290 166 Watts W/*C Storage Temperature Range Tstg -65 to 4 150 -c Symbol Max Unit RHJC 0. 6 »C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (Tc = 25=C unless otherwise noted.) Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (lc = 50 mAdc; IB = 0} V(BR)CEO 20 — — Vdc Collector-Emitter Breakdown Voltage (lc = 200 mAdc. VBE = 0) Characteristic OFF CHARACTERISTICS VIBRJCES 45 — — Vdc Collector-Base Breakdown Voltage (lc = 200 mAdc, IE = 0) V(BR)CBO 45 — — Vdc Emitter-Base Breakdown Voltage (IE = 10 mAdc. lc = 0} V(BR)EBO 3.0 — — Vdc — _ 10 Collector Cutoff Current (VCE = 16 Vdc, VBE = 0, Tc = 25"C) ICES mAdc (continued) NJ Semiconductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished b> N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use VI Semi-Conductors encourages customers to verity that datasheets are current before phcing orders f l l l^«llA ELECTRICAL CHARACTERISTICS - continued (Tc = 25 C unless otherwise noted ) Symbol Min Typ Max Unit HFE 10 70 — — Cob — 550 800 PF Common-Emitter Amplifier Power Gain (V cc = 12.5 Vdc, Pout = 100 W, lc(max, = 10 Adc, I CQ = 150mAdc. f = 30, 30.001 MHz) GPE 10 12 Collector Efficiency (V c c = 12.5 Vdc. P out = 100 W, l c( ™x)= 10 Adc, ICQ = 1 50 mA, f = 30, 30.001 MHz) n 40 Characteristic ON CHARACTERISTICS DC Current Gain (lc = 5.0Adc. VCE = 5.0Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (V C B = 12.5Vdc, IE = 0, f = 1.0MHz) FUNCTIONAL TESTS % IMD Intermodulation Distortion (1) (V C E= 12.5 Vdc, Poul = 100 W. lc = 10 Adc. ICQ = 150mA, f = 30, 30.001 MHz) dB -33 -30 dB NOTE, I. To proposed EIA method of measurement. Reference peak envelope power. nnfifin 1 CR1! r BIAS X ?"C5 ^C7 ^pC6 \ / t L5 q^C8 ? >C9 ? ^C10 12.5V* / 12 L4 S1 1 \ J N OUTPUT -ir RF \ INPUT S *v •2 L C2 j yr A ~? £, /* L1 rvv^-i /Jl (V ? ^C3 32 < \ C1.C2.C4— 170-780 pF, ARCO 469 C3 — 80-480 pF. ARCO 466 CS.C7.C10— ERIE 0.1 uF. 100 V C6 — MALLORY 500 uF @ 15 V Electrolytic C9 — 100 uF. 15 V Electrolytic C8 — 1000 pF, 350 V UNDERWOOD R1 — 10 U 25 Watt Wirewound ^ ,U,T. ° L3 R2 — 10 U, 1.0 Watt Carbon CR1 - 1N4997 LI L2 L3 L4 L5 — .3 Turns, #16 Wire, 5/16" I.D., 5/16" Long — 12 Turns, #16 Enameled Wire Closewound, 1/4" I.D. — 1-3/4 Turns, 1/8" Tubing, 3/8" I.D.. 3/8" Long — 10uH Molded Choke — 10 Ferme Beads — FERROXCUBE #56-590-65/36 Figure 1. 30 MHz Test Circuit Schematic / RF