MRF421 - New Jersey Semiconductor

, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
MRF421
Designed primarily for application as a high-power linear amplifier from 2.0
Product Image
to 30 MHz.
Specified 12.5 V, 30 MHz characteristics —
Output power = 100 W (PEP)
Minimum gain = 10 dB
Efficiency = 40%
Intermodulation distortion @ 100 W (PEP) — IMD = -30 dB (min.)
100% tested for load mismatch at all phase angles with 30:1 VSWR
CASE 211-11
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
20
Vdc
Collector-Base Voltage
VCBO
45
Vdc
Emitter-Base Voltage
VEBO
3,0
Vdc
Collector-Emitter Voltage
Collector Current — Continuous
lc
20
Adc
Withstand Current — 10s
—
30
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
290
166
Watts
W/*C
Storage Temperature Range
Tstg
-65 to 4 150
-c
Symbol
Max
Unit
RHJC
0. 6
»C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (Tc = 25=C unless otherwise noted.)
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage (lc = 50 mAdc; IB = 0}
V(BR)CEO
20
—
—
Vdc
Collector-Emitter Breakdown Voltage (lc = 200 mAdc. VBE = 0)
Characteristic
OFF CHARACTERISTICS
VIBRJCES
45
—
—
Vdc
Collector-Base Breakdown Voltage (lc = 200 mAdc, IE = 0)
V(BR)CBO
45
—
—
Vdc
Emitter-Base Breakdown Voltage (IE = 10 mAdc. lc = 0}
V(BR)EBO
3.0
—
—
Vdc
—
_
10
Collector Cutoff Current (VCE = 16 Vdc, VBE = 0, Tc = 25"C)
ICES
mAdc
(continued)
NJ Semiconductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
VI Semi-Conductors encourages customers to verity that datasheets are current before phcing orders
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ELECTRICAL CHARACTERISTICS - continued (Tc = 25 C unless otherwise noted )
Symbol
Min
Typ
Max
Unit
HFE
10
70
—
—
Cob
—
550
800
PF
Common-Emitter Amplifier Power Gain
(V cc = 12.5 Vdc, Pout = 100 W, lc(max, = 10 Adc,
I CQ = 150mAdc. f = 30, 30.001 MHz)
GPE
10
12
Collector Efficiency
(V c c = 12.5 Vdc. P out = 100 W, l c( ™x)= 10 Adc,
ICQ = 1 50 mA, f = 30, 30.001 MHz)
n
40
Characteristic
ON CHARACTERISTICS
DC Current Gain
(lc = 5.0Adc. VCE = 5.0Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(V C B = 12.5Vdc, IE = 0, f = 1.0MHz)
FUNCTIONAL TESTS
%
IMD
Intermodulation Distortion (1)
(V C E= 12.5 Vdc, Poul = 100 W. lc = 10 Adc.
ICQ = 150mA, f = 30, 30.001 MHz)
dB
-33
-30
dB
NOTE,
I. To proposed EIA method of measurement. Reference peak envelope power.
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C1.C2.C4— 170-780 pF, ARCO 469
C3 — 80-480 pF. ARCO 466
CS.C7.C10— ERIE 0.1 uF. 100 V
C6 — MALLORY 500 uF @ 15 V Electrolytic
C9 — 100 uF. 15 V Electrolytic
C8 — 1000 pF, 350 V UNDERWOOD
R1 — 10 U 25 Watt Wirewound
^
,U,T.
°
L3
R2 — 10 U, 1.0 Watt Carbon
CR1 - 1N4997
LI
L2
L3
L4
L5
— .3 Turns, #16 Wire, 5/16" I.D., 5/16" Long
— 12 Turns, #16 Enameled Wire Closewound, 1/4" I.D.
— 1-3/4 Turns, 1/8" Tubing, 3/8" I.D.. 3/8" Long
— 10uH Molded Choke
— 10 Ferme Beads — FERROXCUBE #56-590-65/36
Figure 1. 30 MHz Test Circuit Schematic
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