I Una. *-/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BUZ900 BUZ901 MECHANICAL DATA N-CHANNEL POWER MOSFET Dimensions in mm iJ.U 8.7 Max. _o]5 10.90 ±0.1 1.50 Typ. 11.60 ±0.3 •© 1 POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N-CHANNEL POWER MOSFET '-- -\ 4.0 ±0.1 • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) R 4.4 ±0.2 • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE TO-3 Pin 1 - Gate Pin 2 - Drain Case - Source • P-CHANNEL ALSO AVAILABLE AS BUZ905 & BUZ906 ABSOLUTE MAXIMUM RATINGS (TCase = 25°C unless otherwise stated) BUZ900 160V BUZ901 VDSX Drain - Source Voltage VGSS Gate - Source Voltage ID Continuous Drain Current 8A b(PK) Body Drain Diode 8A PD Total Power Dissipation ±14V @ Tcase = 25°C Storage Temperature Range Tstg TJ Reuc 200V 125W -55 to 150°C Maximum Operating Junction Temperature 150°C Thermal Resistance Junction - Case rc/w ... . Quality Semi-Conductors BUZ900 BUZ901 STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Test Conditions Characteristic VGS = -10V Min. BUZ900 160 rBUZ901 200 BVDSX Drain - Source Breakdown Voltage BVGSS Gate - Source Breakdown Voltage VDS = 0 IG = ±100^A ±14 \/GS(OFF) Gate - Source Cut-Off Voltage VDS = 10V ID = 100mA oTis ^DS(SAT)* Drain - Source Saturation Voltage VGD-O ID = 10mA Typ. Max. V ' V ID = 8A ' I V D S = 160V IDSX Forward Transfer Admittance VDS = 10V 12 V mA 10 BUZ901 yfs* V ! . i VDS = 200V GS 1,5""" 10 i BUZ900 i VGS = -10V Drain - Source Cut-Off Current Unit 0.7 lo = 3A " ' 2 S Max. Unit DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Characteristic Test Conditions CJSS Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Min. Typ. 500 Vr^o - 1 0V 300 f=1MHz ton Turn-on Time VDS = 20V toff Turn-off Time ID = 5A 10 100 ! """so" * Pulse Test: Pulse Width = 300^3 , Duty Cycle < 2%. Derating Chart 125 100 25 50 pF 75 100 Tc — CASE TEMPERATURE ( C) 125 150 ns