One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (201) 376-2922
(212)227-6005
FAX: (201) 376-8960
MTM12P05
MTM12P06
MTM12P08
MTM12P10
MTP12P05
MTP12P06
MTP12P08
MTP12P10
Designer's Data Sheet
Power Field Effect
Transistor
*
P-Channel Enhancement-Mode
Silicon Gate TMOS
These TMOS Power FETs are designed for medium voltage,
high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
• Silicon Gate for Fast Switching Speeds — Switching Times
Specified at 100°C
• Designer's Data — IpSS- vDS(on)< vGS(th) and SOA Specified
at Elevated Temperature
t Rugged — SOA is Power Dissipation Limited
• Source-to-Drain Diode Characterized for Use With Inductive Loads
TMOS POWER FETs
12 AMPERES
fDSIonl = 0-3 OHM
50, $0, 80 and 100 VOLTS
MTM12P05
MTM12P06
MTM12P08
MTM12P10
MAXIMUM RATINGS
MTM OR MTP
12P05 12P06 12P08 12P10
Drain-Source Voltage
VDSS
50
60
80
100
Vdc
Drain-Gate Voltage
VDGR
50
60
80
100
Vdc
TO-204AA
(Res = i wn)
Gate-Source Voltage — Continuous
— Non-repetitive {tp ^ 50 ^s)
VGS
VGSM
±20
±40
Vdc
Vpk
Adc
Drain Current
Continuous
Pulsed
ID
'DM
Total Power Dissipation (a TC = 25°C
Derate above 25"C
Operating and Storage Temperature Range
12
28
PD
75
0.6
Tj,T st g
-65 to 150
RWC
1.67
Watts
vyrc
°c"
THERMAL CHARACTERISTICS
"CAW
Thermal Resistance
Junction to Case
Junction to Ambient
TO-204
R»JA
TO-220
Maximum Lead Temperature for Soldering
Purposes, 1/8" from case for 5 seconds
Quality Semi-Conductors
30
MTP12P05
MTP12P06
MTP12P08
MTP12P10
62.5
TL
275
•c
TO-220AB
«£XV£
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (201) 376-2922
(212)227-6005
FAX: (201) 376-8960
MTM/MTP12P05. 06, 08,10
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Characteristic
Symbol
Win
Max
Unit
OFF CHARACTERISTICS
VIBRIDSS
Drain-Source Breakdown Voltage
(VGS = 0, ID = 0.25 mA)
MTM/MTP12P05
MTM/MTP1 2P06
MTM/MTP12P08
MTM/MTP12P10
Zero Gate Voltage Drain Current
<VDS = Rated VDSS, VQS = 0)
IDSS
(VDS = R<"»<i VDSS- VGS = o, TJ = i25°o
Gate-Body Leakage Current, Forward (VQSF = 20 Vcic. VDS = u'
!GSSF
Gate-Body Leakage Current, Reverse (VGSR - 20 Vdc, VDS = 0)
!GSSR
Vdc
50
60
80
100
-
—
Mdc
10
100
-
100
nAdc
100
nAdc
ON CHARACTERISTICS1
Gate Threshold Voltage (VQS = VQS* !D = ' mA)
Tj = 100°C
VGS(th)
2
1.5
4.5
4
Vdc
Static Drain-Source On-Resistance (VQS = 10 Vdc, ID - 6 Adc)
T)S(on)
-
0.3
Ohm
Drain-Source On-Voltage ( VGS = 10V)
(ID - 12 Adc)
(ID = 6 Adc, Tj = 100°C)
vDS(on)
-
4.2
3.8
BFS
2
-
mhos
Cjss
—
920
pF
Coss
-
675
Crss
-
200
td(on)
—
50
tr
-
150
'd(off)
-
150
tf
-
150
50
_
Forward Transconductance (Vos = 18 V, ID = 6 A)
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS - 25 v. VGS ~ °f = 1 MHz)
See Figure 10
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS* (Tj = 100°C)
Turn-On Delay Time
Rise Time
(VDD
Turn-Off Delay Time
= 25 V, ID = O.S Rated ID
See Figures 12 and 13
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS ~ ° 8 Rated VDSS
ID = Rated ID, VQS = 10 V)
See Figure 11
°g
33 (Typ)
Qgs
16 (Typ)
Ogd
17 (Typ)
-
VSD
4 (Typ)
5.5
ns
nC
SOURCE DRAIN DIODE CHARACTERISTICS*
Forward On-Voltage
Forward Turn-On Time
Us = Rated ID
VGS = 0)
'on
Vdc
Limited by stray inductance
trr
300 (Typ)
-
ns
Internal Drain Inductance
(Measured from the contact screw on the header closer
to the source pin and the center of the die)
Ld
5 (Typ)
—
nH
Internal Source Inductance
(Measured from the source pin, 0.25" from the package
to the source bond pad)
Ls
12.5 (Typ)
"
Reverse Recovery Time
INTERNAL PACKAGE INDUCTANCE (TO-204)
INTERNAL PACKAGE INDUCTANCE (TO-220)
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25" from package to center of die)
Ld
Internal Source Inductance
(Measured from the source lead 0.25" from package to source bond pad.)
LS
•Pulu T.it: Pulu Width < 300 tt>. Duty Cycl* * 2%.
Quality Semi-Conductors
3.5 (Typ)
4.5 (Typ)
7.5 (Typ)
_
—
nH