BUZ900X4S BUZ901X4S MAGNA TEC NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm (inches) 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) H= 4 .8 (0 .1 8 7 ) 4 .9 (0 .1 9 3 ) (4 places) R 4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 ) 4 POWER MOSFETS FOR AUDIO APPLICATIONS Hex Nut M 4 (4 places) 0 .7 5 (0 .0 3 0 ) 0 .8 5 (0 .0 3 3 ) 2 5 .2 (0 .9 9 2 ) 2 5 .4 (1 .0 0 0 ) 2 8 .9 (0 .3 5 0 ) 9 .6 (0 .3 7 8 ) 1 2 .6 (0 .4 9 6 ) 1 2 .8 (0 .5 0 4 ) 3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) 1 N–CHANNEL POWER MOSFET FEATURES 3 • HIGH SPEED SWITCHING 3.3 (0 .1 2 9) 3.6 (0.14 3 ) 1 4 .9 (0.58 7 ) 1 5 .1 (0.59 4 ) R = 4 .0 (0 .1 57 ) (2 P lac e s) 5 .1 (0 .2 0 1 ) 5 .9 (0 .2 3 2 ) • N–CHANNEL POWER MOSFET 1 .9 5 (0 .0 7 7 ) 2 .1 4 (0 .0 8 4 ) 3 0 .1 (1 .1 8 5 ) 3 0 .3 (1 .1 9 3 ) • SEMEFAB DESIGNED AND DIFFUSED 3 8 .0 (1.4 9 6 ) 3 8 .2 (1.5 0 4 ) • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE SOT227 Pin 1 – Drain Pin 2 – Source Pin 3 – Gate Pin 4 – Drain • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage BUZ900X4S 160V BUZ901X4S 200V VGS Gate – Source Voltage ±14V ID Continuous Drain Current 32A ID(PK) Body Drain Diode 32A PD Total Power Dissipation Tstg Storage Temperature Range Tj Maximum Operating Junction Temperature RθJC Thermal Resistance Junction – Case Magnatec. @ Tcase = 25°C Telephone (0455) 554711. Telex: 341927. Fax (0455) 552612. 500W –55 to 150°C 150°C 0.3°C/W Prelim. 4/94 BUZ900X4S BUZ901X4S MAGNA TEC NEW PRODUCT UNDER DEVELOPMENT ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic BVDSX Drain – Source Breakdown Voltage BVGSS Gate – Source Breakdown Voltage VGS(OFF) Gate – Source Cut–Off Voltage VDS(SAT)* Drain – Source Saturation Voltage IDSX Drain – Source Cut–Off Current yfs* Ciss Coss Crss ton toff Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–on Time Turn-off Time Test Conditions VGS = –10V BUZ900X4S ID = 10mA BUZ901X4S VDS = 0 IG = ±100µA VDS = 10V ID = 100mA VGD = 0 ID = 32A VGS = –10V VDS = 160V BUZ900X4S VDS = 200V BUZ901X4S VDS = 10V ID = 5A VDS = 10V f = 1MHz VDS = 20V ID = 7A Min. 160 200 ±14 0.1 Typ. Max. Unit V 2 TBE TBE TBE TBE TBE 1.5 12 V V V 10 10 6 mA mA S pF nS * Pulse Test: Pulse Width = 300µS , Duty Cycle ≤ 2% D S Magnatec. G Telephone (0455) 554711. Telex: 341927. Fax (0455) 552612. Prelim. 4/94