<$£.rnL-Condu<2toi ^P
, iJna,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BLF861A
UHF power LDMOS transistor
PINNING - SOT540A
FEATURES
• High power gain
DESCRIPTION
PIN
• Easy power control
1
drain 1
• Excellent ruggedness
2
drain 2
• Designed to withstand abrupt load mismatch errors
3
gate 1
• Source on underside eliminates DC isolators; reducing
common mode inductance
4
gate 2
5
source connected to flange
• Designed for broadband operation (UHF band)
• Internal input and output matching for high gain and
optimum broadband operation.
APPLICATIONS
• Communication transmitter applications in the UHF
frequency range.
3
4
Top view
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in a SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source 860 MHz test circuit.
MODE OF OPERATION
CW, class-AB
PAL BG (TV); class-AB
f
(MHz)
VDS
(V)
PL
(W)
GP
(dB)
860
32
150
860 (ch 69)
32
>150
typ. 170
(peak sync)
{%)
AGP
(dB)
>13.5
typ. 14.5
>50
<1
>14
>40
note 1
TlD
Note
1. Sync compression: input sync > 33%; output sync 27%.
NJ .Semi-Coiidudors reserves rhe right (o change test conditions, parameter limits and packuge dimensions without notice
Information tumished by NJ Semi-Conductors"' believed to he hoih accurate and reliable ill the lime of going to press. However
Semi-C uiiJuuors .bsumcs no responsibility lor ;my errors nr uumsiiins JiscuvcreJ in its use NJ Seim-CtutchMurs ei
i. iiiti1 mop; In VL'iil\m ih Has heels ire uirreni before plncina
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
PARAMETER
SYMBOL
MIN.
CONDITIONS
UNIT
MAX.
VDS
drain-source voltage
-
65
V
VGS
ID
gate-source voltage
-
±15
V
drain current (DC)
-
18
A
Plot
total power dissipation
-
318
W
Tstg
storage temperature
-65
+150
°C
T|
junction temperature
-
200
°C
T mb <25°C
UHF power LDMOS transistor
BLF861A
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Rth i-mb
thermal resistance from junction to mounting base
Rth mb-h
thermal resistance from mounting base to heatsink
CONDITIONS
VALUE
UNIT
Tmb = 25°C;P,ot = 318W
0.55
K/W
0.2
K/W
CHARACTERISTICS
Tj = 25 °C; per section; unless otherwise specified.
SYMBOL
V(BR)DSS
VQSth
PARAMETER
CONDITIONS
MIN.
drain-source breakdown voltage
gate-source threshold voltage
VQS = 0; ID = 1.5mA
VDS = 10V; ID = 150mA
TYP.
MAX.
UNIT
65
-
-
V
4
-
5.5
V
-
-
2.2
HA
18
-
-
A
-
-
25
bsx
drain-source leakage current
drain cut-off current
IGSS
gate leakage current
VQS = 0; VDS = 32 V
VGs = VGsth + 9V;VDs = 10V
VGS = +15V;V DS = 0
9fs
forward transconductance
VDS = 10V; ID = 4 A
-
4
-
VGS = VGS,h + 9V;l D = 4 A
-
160
-
nA
S
mO
IDSS
RDSon
drain-source on-state resistance
CjSS
input capacitance
VQS = 0; VDS = 32 V; f = 1 MHz < 1 > -
82
-
pF
CQSS
output capacitance
feedback capacitance
VGS = 0; VDS = 32 V; f = 1 MHz < 1 > -
40
-
VQS = 0; VDS = 32 V; f = 1 MHz < 1 > -
6
-
pF
PF
Cres
BLF861A
UHF power LDMOS transistor
APPLICATION INFORMATION
RF performance in a common source 860 MHz test circuit. Th = 25 °C; Rth mb-h = 0.15 K/W; unless otherwise specified.
MODE OF
OPERATION
CW; class-AB
f
(MHz)
860
f! = 860
it = 860.1
860
PAL BG (TV); class-AB
(ch 69)
2-tone; class-AB
VDS
(V)
32
IDQ
(A)
PL
(W)
GP
(dB)
1
150
32
1
150 (PEP)
>13.5
typ. 14.5
>14
32
1
>150
typ. 170
(peak sync)
>14
Ho
(%)
>50
d,m
(dBc)
>40
<-25
>40
AGP
(dB)
<1
note 1